Exploring the enhancement of the thermoelectric properties of bilayer graphyne nanoribbons.

Carbon materials are vital for sustainable energy applications based on abundant and non-toxic raw materials. In this scenario, carbon nanoribbons have superior thermoelectric properties in comparison with their 2D material counterparts, owing to their particular electronic and transport properties. Therefore, we explore the electronic and thermoelectric properties of bilayer α-graphyne nanoribbons (α-BGyNRs) by means of density functional theory, tight-binding, and the non-equilibrium Green's functions (NEGF) method. Our calculations indicate that Ab stacking is the most stable configuration regardless of the edge type. The band structure presents finite band gaps with different features for armchair and zigzag nanoribbons. Concerning the thermoelectric quantities, the Seebeck coefficient is highly sensitive to the width and edge type, while its room-temperature values can achieve a measurable mV K-1 scale. The electric conductance is found to increase due to layering, thus enhancing the power factor for α-BGyNRs compared with single nanoribbons. These findings therefore indicate the possibility of engineering such systems for thermal nanodevices.

Resonance Raman enhancement by the intralayer and interlayer electron-phonon processes in twisted bilayer graphene.

Twisted bilayer graphene is a fascinating system due to the possibility of tuning the electronic and optical properties by controlling the twisting angle [Formula: see text] between the layers. The coupling between the Dirac cones of the two graphene layers gives rise to van Hove singularities (vHs) in the density of electronic states, whose energies vary with [Formula: see text]. Raman spectroscopy is a fundamental tool to study twisted bilayer graphene (TBG) systems since the Raman response is hugely enhanced when the photons are in resonance with transition between vHs and new peaks appear in the Raman spectra due to phonons within the interior of the Brillouin zone of graphene that are activated by the Moiré superlattice. It was recently shown that these new peaks can be activated by the intralayer and the interlayer electron-phonon processes. In this work we study how each one of these processes enhances the intensities of the peaks coming from the acoustic and optical phonon branches of graphene. Resonance Raman measurements, performed in many different TBG samples with [Formula: see text] between [Formula: see text] and [Formula: see text] and using several different laser excitation energies in the near-infrared (NIR) and visible ranges (1.39-2.71 eV), reveal the distinct enhancement of the different phonons of graphene by the intralayer and interlayer processes. Experimental results are nicely explained by theoretical calculations of the double-resonance Raman intensity in graphene by imposing the momentum conservation rules for the intralayer and the interlayer electron-phonon resonant conditions in TBGs. Our results show that the resonant enhancement of the Raman response in all cases is affected by the quantum interference effect and the symmetry requirements of the double resonance Raman process in graphene.

Investigating the preservation of π-conjugation in covalently functionalized carbon nanotubes through first principles simulations.

We performed a theoretical investigation of single-walled carbon nanotubes (CNTs) functionalized with triazine molecules. Upon adsorption, the influence of the molecule orientation on the CNTs' electronic properties is examined by combining first-principles density functional theory calculations and simulations of X-ray Absorption Near-Edge Structure (XANES) at the C K-edge. Our calculations show that the electronic properties of functionalized CNTs can preserve the same features of pristine CNTs, for both semiconductor and metallic CNTs, depending on the orientation of the covalently bonded molecule. For that configuration, we observe a breakage of the CNT C-C bond at the molecule adsorption site. Moreover, the XANES spectra reveal that sp2 bonding hybridization is preserved along the CNT network. On the other hand, the electronic properties of pristine CNTs are no longer preserved for adsorbed molecule orientations resulting in intact C-C bond at the adsorption site. In this case, the XANES spectra indicate that the molecule-CNT interactions result in sp3 hybridization. Our findings help to elucidate whether π-conjugation is preserved in functionalized CNTs, demonstrating that calculations of XANES spectra are a powerful tool to resolve such systems.

Stokes and anti-Stokes Raman scattering in mono- and bilayer graphene.

Stokes and anti-Stokes Raman spectroscopy associated with the intervalley double resonance process in carbon materials is a unique technique to reveal the relationship between their characteristic electronic band structures and phonon dispersion. In graphene, the dominant resonant behavior for its 2D mode is an intervalley triple resonance Raman process. In this paper, we report the Stokes and anti-Stokes Raman scattering of the 2D mode in pristine graphene. The excitation energy (Eex)-dependent frequency discrepancy between anti-Stokes and Stokes components of the 2D mode (Δω(2D)) is observed, which is in good agreement with the theoretical results. This is attributed to the nonlinear dispersion of the in-plane transverse optical (iTO) phonon branch near the K point, confirmed by the nonlinear Eex-dependent frequency of the 2D mode (ω(2D)) in the range of 1.58-3.81 eV. The wavevector-dependent phonon group velocity of the iTO phonon branch is directly derived from Δω(2D). The Stokes and anti-Stokes Raman scattering of the D mode in defected graphene and the 2D mode in bilayer graphene associated with intervalley double resonance Raman processes is also reported.

Finite-size correction scheme for supercell calculations in Dirac-point two-dimensional materials.

Modern electronic structure calculations are predominantly implemented within the super cell representation in which unit cells are periodically arranged in space. Even in the case of non-crystalline materials, defect-embedded unit cells are commonly used to describe doped structures. However, this type of computation becomes prohibitively demanding when convergence rates are sufficiently slow and may require calculations with very large unit cells. Here we show that a hitherto unexplored feature displayed by several 2D materials may be used to achieve convergence in formation- and adsorption-energy calculations with relatively small unit-cell sizes. The generality of our method is illustrated with Density Functional Theory calculations for different 2D hosts doped with different impurities, all of which providing accuracy levels that would otherwise require enormously large unit cells. This approach provides an efficient route to calculating the physical properties of 2D systems in general but is particularly suitable for Dirac-point materials doped with impurities that break their sublattice symmetry.

Intralayer and interlayer electron-phonon interactions in twisted graphene heterostructures.

The understanding of interactions between electrons and phonons in atomically thin heterostructures is crucial for the engineering of novel two-dimensional devices. Electron-phonon (el-ph) interactions in layered materials can occur involving electrons in the same layer or in different layers. Here we report on the possibility of distinguishing intralayer and interlayer el-ph interactions in samples of twisted bilayer graphene and of probing the intralayer process in graphene/h-BN by using Raman spectroscopy. In the intralayer process, the el-ph scattering occurs in a single graphene layer and the other layer (graphene or h-BN) imposes a periodic potential that backscatters the excited electron, whereas for the interlayer process the el-ph scattering occurs between states in the Dirac cones of adjacent graphene layers. Our methodology of using Raman spectroscopy to probe different types of el-ph interactions can be extended to study any kind of graphene-based heterostructure.

Chemical disorder determines the deviation of the Slater-Pauling rule for Fe2MnSi-based Heusler alloys: evidences from neutron diffraction and density functional theory.

Fe2MnSi fails to follow the Slater-Pauling rule. This phenomenon is thought to originate from either: (i) an antiferromagnetic arrangement of Mn ions at low temperature and/or (ii) chemical disorder. An important insight on this issue could be achieved by considering Fe2MnSi1-x Ga x compounds, thoroughly studied here by means of magnetization, neutron diffraction and density functional calculations (DFT). Our results indicate that chemical disorder (and not the antiferromagnetic arrangement) is responsible for the deviation of the Slater-Pauling rule on Fe2MnSi-based Heusler alloys. Furthermore, evidences suggest that Ga substitution into Si site favors the Fe/Mn disorder, further enhancing the observed deviation.

Raman spectroscopy as probe of nanometre-scale strain variations in graphene.

Confocal Raman spectroscopy has emerged as a major, versatile workhorse for the non-invasive characterization of graphene. Although it is successfully used to determine the number of layers, the quality of edges, and the effects of strain, doping and disorder, the nature of the experimentally observed broadening of the most prominent Raman 2D line has remained unclear. Here we show that the observed 2D line width contains valuable information on strain variations in graphene on length scales far below the laser spot size, that is, on the nanometre-scale. This finding is highly relevant as it has been shown recently that such nanometre-scaled strain variations limit the carrier mobility in high-quality graphene devices. Consequently, the 2D line width is a good and easily accessible quantity for classifying the crystalline quality, nanometre-scale flatness as well as local electronic properties of graphene, all important for future scientific and industrial applications.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic <--> swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

The effects of oxygen on the surface passivation of InP nanowires.

The effects of surface passivation on the electronic and structural properties of InP nanowires have been investigated by first-principles calculations. We compare the properties of nanowires whose surfaces have been passivated in several ways, always by H atoms and OH radicals. Taking as the initial reference nanowires that are fully passivated by H atoms, we find that the exchange of these atoms at the surface by OH radicals is always energetically favorable. A nanowire fully passivated by OH radicals is about 2.5 eV per passivated dangling bond more stable than a nanowire fully passivated by H atoms. However, the energetically most stable passivated surface is predicted to have all In atoms bonded to OH radicals and all P atoms bonded to H atoms. This mixed passivation is 2.66 eV per passivated dangling bond more stable than a nanowire fully passivated by H atoms. Our results show that, in comparison with the fully H-saturated nanowire, the fully OH-saturated nanowire has a smaller energy band gap and localized states near the energy band edges. Also, more interestingly, concerning optical applications, the most stable H+OH passivated nanowire has a well-defined energy band gap, only 10% smaller than the H-saturated nanowire energy gap, and few localized states always close to the valence band maximum.