Bridging the gap between surface physics and photonics.

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

Low-loss operation of silicon-on-insulator integrated components at 2.6-2.7†µm.

Development of mid-infrared photonics is gaining attention, driven by a multitude of sensing applications requiring increasingly compact and cost-effective photonics systems. To this end, low-loss operation of µm-scale silicon-on-insulator photonic integration elements is demonstrated for the 2.6-2.7 µm wavelength region. The platform utilizes the 3 µm thick silicon core layer technology enabling demonstration of low-loss and low birefringence waveguides. Measurements of record low single mode waveguide propagation losses of 0.56 ± 0.09 dB/cm and bend losses <0.08 dB for various miniaturized bend geometries are presented and validated by simulation. Furthermore, a wavelength filter based on echelle grating that allows to select several operating channels within the 2.64-2.7 µm band, with a linewidth of ∼1.56 nm for each channel is presented.

Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si3N4 photonics integrated reflector.

Tunable lasers emitting in the 2-3 µm wavelength range that are compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si3N4 photonic integrated circuits offers an attractive platform. Herein, we utilize the low-loss features of Si3N4 waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si3N4 Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of ∼90 nm (1937-2026 nm). The low-loss performance of several fundamental Si3N4 building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibits a transmission loss as low as 0.15 dB/cm, the 90° bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB.

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides.

The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need for wavelength versatility. To this end, we demonstrate for the first time the flip-chip integration of a GaSb semiconductor optical amplifier with a silicon photonic circuit, addressing the transition of photonic integration technology towards mid-IR wavelengths. In particular, an on-chip hybrid DBR laser emitting in the 2 µm region with an output power of 6 mW at room temperature is demonstrated. Wavelength locking was achieved employing a grating realized using 3 µm thick silicon-on-insulator (SOI) technology. The SOI waveguides exhibit strong mode confinement and low losses, as well as excellent mode matching with GaSb optoelectronic chips ensuring low loss coupling. These narrow line-width laser diodes with an on-chip extended cavity can generate a continuous-wave output power of more than 1 mW even when operated at an elevated temperature of 45°C. The demonstration opens an attractive perspective for the on-chip silicon photonics integration of GaSb gain chips, enabling the development of PICs in a broad spectral range extending from 1.8 µm to beyond 3 µm.

Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration.

The length variation associated with standard cleaving of III-V optoelectronic chips is a major source of loss in the integration with the micron-scale silicon-on-insulator waveguides. To this end, a new, to the best of our knowledge, approach for precise definition of the III-V chip length is reported. The method employs lithography and wet etching of cleave marks outside the active III-V waveguides. The marks follow a specific crystallographic orientation and are used to initiate and guide the cleaving process. Besides minimizing the air gap between the butt-coupled III-V and Si waveguides and hence minimizing the coupling losses, the use of precisely defined length significantly improves the integration yield owing to the increased length uniformity. We apply this technique to defining the lengths of GaAs-based semiconductor optical amplifiers and demonstrate length control with an accuracy better than 250 nm per facet. This variation is more than 1 order of magnitude smaller than with the traditional cleaving methods, resulting in improvement of coupling by several dBs.

Dual-mode DFB laser diodes with apodized surface gratings.

Dual longitudinal mode distributed feedback lasers have been fabricated using surface gratings with and without apodization. Analytic formulas and simulations that have been used to derive design guidelines are presented. The fabricated device characteristics are in good agreement with the simulations. The grating apodization enables a lower threshold current density, a higher output power and a broader range of difference frequency tunability by bias, which can be extended beyond the measured 15-55 GHz by changing the device structure. The apodization and the complex coupling of the surface gratings reduce the effects of the uncontrollable phase of facet reflections, enabling the use of higher facet reflectivities, which leads to narrower intrinsic short time-scale linewidths.

Data transmission at 1300 nm using optical interposer comprising hybrid integrated silicon waveguide and dilute nitride electroabsorption modulator.

High speed back-to-back transmission of NRZ data at 12.5 Gbit/s was achieved over a repeaterless optical network without the use of forward error correction or optical clock recovery using a hybrid integrated silicon photonics optical interconnect. The interconnect comprises an electroabsorption modulator based on dilute nitride multiple quantum well material on GaAs substrate optically coupled to large core silicon waveguide using passive alignment and flip-chip bonding.

Distributed feedback lasers with alternating laterally coupled ridge-waveguide surface gratings.

Distributed feedback lasers with laterally coupled ridge-waveguide surface gratings having the protrusions placed alternately on the lateral sides of the ridge are demonstrated. This configuration enables easier-to-fabricate wider trenches than in the gratings with protrusions placed symmetrically on both sides of the ridge. The design strategy and coupling coefficient calculations are discussed. The output characteristics of fabricated lasers show lower threshold currents and higher slope efficiencies for devices with first-order alternating gratings than for those with third-order symmetric gratings having comparable grating trench widths and similar coupling coefficients.

High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm.

We report a single-mode 1180 nm distributed Bragg reflector (DBR) laser diode with a high output power of 340 mW. For the fabrication, we employed novel nanoimprint lithography that ensures cost-effective, large-area, conformal patterning and does not require regrowth. The output characteristics exhibited outstanding temperature insensitivity with a power drop of only 30% for an increase of the mount temperature from 20°C to 80°C. The high temperature stability was achieved by using GaInNAs/GaAs quantum wells (QWs), which exhibit improved carrier confinement compared to standard InGaAs/GaAs QWs. The corresponding characteristic temperatures were T0=110 K and T1=160 K. Moreover, we used a large detuning between the peak wavelength of the material gain at room temperature and the lasing wavelength determined by the DBR. In addition to good temperature characteristics, GaInNAs/GaAs QWs exhibit relatively low lattice strain with direct impact on improving the lifetime of laser diodes at this challenging wavelength range. The single-mode laser emission could be tuned by changing the mount temperature (0.1 nm/°C) or the drive current (0.5 pm/mA). The laser showed no degradation in a room-temperature lifetime test at 900 mA drive current. These compact and efficient 1180 nm laser diodes are instrumental for the development of compact frequency-doubled yellow-orange lasers, which have important applications in medicine and spectroscopy.

Narrow linewidth templates for nanoimprint lithography utilizing conformal deposition.

Nanoimprint lithography has the potential to cost efficiently realize patterns with extremely narrow linewidth over a large area. A significant challenge to achieving this target is the fabrication of nanoimprint templates. The cost and writing time of conventional electron beam lithography for direct writing of the templates rapidly increases as the patterned area increases and the linewidth decreases. We have developed a novel process for creating narrow linewidth nanopatterns. This process is based on conformal deposition of thin films on seed nanopatterns. We have demonstrated the process by fabricating nanosized loops and lines. The linewidth of the structures can be tuned precisely, and in our experiments it could be reduced to 20 nm. The closed loop structures are interesting, since this geometry is crucially important in many leading edge research fields such as negative refractive index materials, ultrahigh density memory applications and quantum rings. The fabricated template was subsequently used as a template in soft-stamp UV nanoimprint lithography to successfully replicate the structures in UV-curable resist.