Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties.

Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of µm. Samples with sulfur and selenium showed high conductivity compared to the undoped material.

Optical properties and structure of Ag-doped InP quantum dots prepared by a phosphine synthetic route.

We report a novel technique for doping InP quantum dots (QDs) with silver that makes use of a AgCl·TOP complex as a source of silver and PH3 as a phosphorus precursor. Formation of two types of nanoparticles in the reaction mixture is observed: Ag-doped InP QDs form at lower silver concentrations and novel Ag/InP core-shell nanostructures form at high Ag-precursor concentrations. Ag-doped QDs possess two luminescent bands: an excitonic band at approx. 670 nm and an IR-band, indicative of dopant luminescence, at approx. 900 nm. Post-synthetic covering of the quantum dots with ZnS leads to a significant increase in both types of luminescence. The core-shell Ag/InP nanoparticles did not emit any luminescence in the visible and near-IR spectral regions.

Highly luminescent core-shell InP/ZnX (X = S, Se) quantum dots prepared via a phosphine synthetic route.

Here we report a simple method for the creation of highly luminescent core-shell InP/ZnX (X = S, Se) quantum dots (QDs) on the basis of a phosphine synthetic route. In this method a Zn precursor was added to the reaction mixture at the beginning of the synthesis to form an In(Zn)P alloy structure, which promoted the formation of a ZnX shell. Core-shell InP/ZnX QDs exhibit highly intensive emission with a quantum yield over 50%. The proposed method is primarily important for practical applications. Advantages of this method compared to the widely used SILAR technique are discussed. We further demonstrate that the SILAR approach consisting of consequent addition of Zn and chalcogen precursors to pre-prepared non-doped InP colloidal nanoparticles is not quite suitable for shell growth without the addition of special activator agents or the use of very reactive precursors.

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation.

Zinc-doped InP(Zn) colloidal quantum dots (QDs) with narrow size distribution and low defect concentration were grown for the first time via a novel phosphine synthetic route and over a wide range of Zn doping. We report the influence of Zn on the optical properties of the obtained quantum dots. We propose a mechanism for the introduction of Zn in the QDs and show that the incorporation of Zn atoms into the InP lattice leads to the formation of Zn acceptor levels and a luminescence tail in the red region of the spectra. Using photochemical etching with HF, we confirmed that the Zn dopant atoms are situated inside the InP nanoparticles. Moreover, doping with Zn is accompanied with the coverage of the QDs by a zinc shell. During the synthesis Zn myristate covers the QD nucleus and inhibits the particle growth. At the same time the zinc shell leads to an increase of the luminescence quantum yield through the reduction of phosphorous dangling bonds. A scenario for the growth of the colloidal InP(Zn) QDs was proposed and discussed.

Surface processes during purification of InP quantum dots.

Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH)3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.