Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers.

Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of spin-based quantum technologies, nano-mechanical resonators and photonics-on-a-chip. For shaping 3D structures out of SiC wafers, predominantly dry-etching techniques are used. SiC is nearly inert with respect to wet etching, occasionally photoelectrochemical etching strategies have been applied. Here, we propose an electrochemical etching strategy that solely relies on defining etchable volumina by implantation of p-dopants. Together with the inertness of the n-doped regions, very sharp etching contrasts can be achieved. We present devices as different as monolithic cantilevers, disk-shaped optical resonators and membranes etched out of a single crystal wafer. The high quality of the resulting surfaces can even be enhanced by thermal treatment, with shape-stable devices up to and even beyond 1550°C. The versatility of our approach paves the way for new functionalities on SiC as high-performance multi-functional wafer platform.

Hexagonal Hybrid Bismuthene by Molecular Interface Engineering.

High-quality devices based on layered heterostructures are typically built from materials obtained by complex solid-state physical approaches or laborious mechanical exfoliation and transfer. Meanwhile, wet-chemically synthesized materials commonly suffer from surface residuals and intrinsic defects. Here, we synthesize using an unprecedented colloidal photocatalyzed, one-pot redox reaction a few-layers bismuth hybrid of "electronic grade" structural quality. Intriguingly, the material presents a sulfur-alkyl-functionalized reconstructed surface that prevents it from oxidation and leads to a tuned electronic structure that results from the altered arrangement of the surface. The metallic behavior of the hybrid is supported by ab initio predictions and room temperature transport measurements of individual nanoflakes. Our findings indicate how surface reconstructions in two-dimensional (2D) systems can promote unexpected properties that can pave the way to new functionalities and devices. Moreover, this scalable synthetic process opens new avenues for applications in plasmonics or electronic (and spintronic) device fabrication. Beyond electronics, this 2D hybrid material may be of interest in organic catalysis, biomedicine, or energy storage and conversion.

Molecular Stacking on Graphene.

The sequential vertical polyfunctionalization of 2D addend-patterned graphene is still elusive. Here, we report a practical realization of this goal via a "molecular building blocks" approach, which is based on a combination of a lithography-assisted reductive functionalization approach and a post-functionalization step to sequentially and controllably link the molecular building blocks ethylpyridine, cis-dichlorobis(2,2'-bipyridyl)ruthenium, and triphenylphosphine (4-methylbenzenethiol, respectively) on selected lattice regions of a graphene matrix. The assembled 2D hetero-architectures are unambiguously characterized by various spectroscopic and microscopic measurements, revealing the stepwise stacking of the molecular building blocks on the graphene surface. Our method overcomes the current limitation of a one-layer-only binding to the graphene surface and opens the door for a vertical growth in the z-direction.

Light-field-driven electronics in the mid-infrared regime: Schottky rectification.

The speed of an active electronic semiconductor device is limited by RC timescale, i.e., the time required for its charging and discharging. To circumvent this ubiquitous limitation of conventional electronics, we investigate diodes under intense mid-infrared light-field pulses. We choose epitaxial graphene on silicon carbide as a metal/semiconductor pair, acting as an ultrarobust and almost-transparent Schottky diode. The usually dominant forward direction is suppressed, but a characteristic signal occurs in reverse bias. For its theoretical description, we consider tunneling through the light-field-modulated Schottky barrier, complemented by a dynamical accumulation correction. On the basis only of the DC parametrization of the diode, the model provides a consistent and accurate description of the experimentally observed infrared phenomena. This allows the conclusion that cycle-by-cycle dynamics determines rectification. As the chosen materials have proven capabilities for transistors, circuits, and even a full logic, we see a way to establish light-field-driven electronics with rapidly increasing functionality.

Light-field control of real and virtual charge carriers.

Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real1-4. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption5-8, but photocurrent generation may stem from real as well as virtual charge carriers9-14. However, a link between the generation of the carrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold-graphene-gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold-graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality15,16.

Laser-Triggered Bottom-Up Transcription of Chemical Information: Toward Patterned Graphene/MoS2 Heterostructures.

Efficiently assembling heterostructures with desired interface properties, stability, and facile patternability is challenging yet crucial to modern device fabrication. Here, we demonstrate an interface coupling concept to bottom-up construct covalently linked graphene/MoS2 heterostructures in a spatially defined manner. The covalent heterostructure domains are selectively created in analogy to the traditional printmaking technique, enabling graphic patterns at the bottom MoS2 layer to be precisely transferred to the top graphene layer. This bottom-up connection and transcription of chemical information is achieved simply via laser beam irradiation. Our approach opens up a new paradigm for heterostructure construction and integration. It enables the efficient generation and real-time visualization of spatially well-resolved covalent graphene/MoS2 heterostructures, facilitating further design and integration of patterned heterostructures into new generations of high-performance devices.

Electronic Coherence and Coherent Dephasing in the Optical Control of Electrons in Graphene.

Electronic coherence is of utmost importance for the access and control of quantum-mechanical solid-state properties. Using a purely electronic observable, the photocurrent, we measure a lower bound of the electronic coherence time of 22 ± 4 fs in graphene. The photocurrent is ideally suited to measure electronic coherence, as it is a direct result of coherent quantum-path interference, controlled by the delay between two ultrashort two-color laser pulses. The maximum delay for which interference between the population amplitude injected by the first pulse interferes with that generated by the second pulse determines the electronic coherence time. In particular, numerical simulations reveal that the experimental data yields a lower bound on the electronic coherence time, masked by coherent dephasing due to the broadband absorption in graphene. We expect that our results will significantly advance the understanding of coherent quantum control in solid-state systems ranging from excitation with weak fields to strongly driven systems.

Covalent Patterning of 2D MoS2.

The development of an efficient method to patterning 2D MoS2 into a desired topographic structure is of particular importance to bridge the way towards the ultimate device. Herein, we demonstrate a patterning strategy by combining the electron beam lithography with the surface covalent functionalization. This strategy allows us to generate delicate MoS2 ribbon patterns with a minimum feature size of 2 µm in a high throughput rate. The patterned monolayer MoS2 domain consists of a spatially well-defined heterophase homojunction and alternately distributed surface characteristics, which holds great interest for further exploration of MoS2 based devices.

Thermoelectricity of near-resonant tunnel junctions and their relation to Carnot efficiency.

We present a conceptual study motivated by electrical and thermoelectrical measurements on various near-resonant tunnel junctions. The squeezable nano junction technique allows the quasi-synchronous measurement of conductance G, I(V) characteristics and Seebeck coefficient S. Correlations between G and S are uncovered, in particular boundaries for S(G). We find the simplest and consistent description of the observed phenomena in the framework of the single level resonant tunneling model within which measuring I(V) and S suffice for determining all model parameters. We can further employ the model for assigning thermoelectric efficiencies [Formula: see text] without measuring the heat flow. Within the ensemble of thermoelectric data, junctions with assigned [Formula: see text] close to the Carnot limit can be identified. These insights allow providing design rules for optimized thermoelectric efficiency in nanoscale junctions.

Molecular embroidering of graphene.

Structured covalent two-dimensional patterning of graphene with different chemical functionalities constitutes a major challenge in nanotechnology. At the same time, it opens enormous opportunities towards tailoring of physical and chemical properties with limitless combinations of spatially defined surface functionalities. However, such highly integrated carbon-based architectures (graphene embroidery) are so far elusive. Here, we report a practical realization of molecular graphene embroidery by generating regular multiply functionalized patterns consisting of concentric regions of covalent addend binding. These spatially resolved hetero-architectures are generated by repetitive electron-beam lithography/reduction/covalent-binding sequences starting with polymethyl methacrylate covered graphene deposited on a Si/SiO2 substrate. The corresponding functionalization zones carry bromobenzene-, deutero-, and chloro-addends. We employ statistical Raman spectroscopy together with scanning electron microscopy/energy dispersive X-ray spectroscopy for an unambiguous characterization. The exquisitely ordered nanoarchitectures of these covalently multi-patterned graphene sheets are clearly visualized.

Covalently Doped Graphene Superlattices: Spatially Resolved Supratopic- and Janus-Binding.

Rational design and fabrication of graphene nanoarchitectures with multifunctionality and multidimensionality remains quite a challenge. Here, we present a synthetic sequence, based on the combination of two advanced patterned-functionalization principles, namely, laser-writing and poly(methyl methacrylate) (PMMA)-assisted lithographic processes, leading to unprecedented covalently doped graphene superlattices. Spatially resolved supratopic- and Janus-binding were periodically weaved on the graphene sheet, leading to four different types of zones with distinct chemical doping and structural properties. Notably, this is also the first realization of patterned Janus graphene. The elaborate chemical doping with micrometer resolution is unequivocally evidenced by scanning Raman spectroscopy (SRS) and scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy (SEM-EDS). The design of the pattern as well as the degree of chemical doping on both opposite sides of graphene can be easily manipulated, rendering exciting potential for graphene nanosystems.

Stark Tuning of the Silicon Vacancy in Silicon Carbide.

We present a versatile scheme dedicated to exerting strong electric fields up to 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally strong electric fields can be selectively controlled. Investigating the silicon vacancy (VSi) in ensemble photoluminescence experiments, we report Stark splitting of the V1' line of 3 meV by a basal electrical field and a Stark shift of the V1 line of 1 meV in an axial electric field. The spectral fine-tuning of the VSi, being an important candidate for realizing quantum networks, paves the way for truly indistinguishable single-photon sources.

Highly Efficient and Reversible Covalent Patterning of Graphene: 2D-Management of Chemical Information.

Patterned graphene-functionalization with a tunable degree of functionalization can tailor the properties of graphene. Here, we present a new reductive functionalization approach combined with lithography rendering patterned graphene-functionalization easily accessible. Two types of covalent patterning of graphene were prepared and their structures were unambiguously characterized by statistical Raman spectroscopy together with scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM-EDS). The reversible defunctionalization processes, as revealed by temperature-dependent Raman spectroscopy, enable the possibility to accurately modulate the degree of functionalization by annealing. This allows for the management of chemical information through complete write/store/erase cycles. Based on our strategy, controllable and efficient patterning graphene-functionalization is no longer a challenge and facilitates the development of graphene-based devices.

An efficient Terahertz rectifier on the graphene/SiC materials platform.

We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.

Coherent Electron Trajectory Control in Graphene.

We investigate coherent electron dynamics in graphene, interacting with the electric field waveform of two orthogonally polarized, few-cycle laser pulses. Recently, we demonstrated that linearly polarized driving pulses lead to sub-optical-cycle Landau-Zener quantum path interference by virtue of the combination of intraband motion and interband transition [Higuchi et al., Nature 550, 224 (2017)NATUAS0028-083610.1038/nature23900]. Here we introduce a pulsed control laser beam, orthogonally polarized to the driving pulses, and observe the ensuing electron dynamics. The relative delay between the two pulses is a tuning parameter to control the electron trajectory, now in a complex fashion exploring the full two-dimensional reciprocal space in graphene. Depending on the relative phase, the electron trajectory in the reciprocal space can, e.g., be deformed to suppress the quantum path interference resulting from the driving laser pulse. Intriguingly, this strong-field-based complex matter wave manipulation in a two-dimensional conductor is driven by a high repetition rate laser oscillator, rendering unnecessary complex and expensive amplified laser systems.

Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect.

Lead halide perovskites are used in thin-film solar cells, which owe their high efficiency to the long lifetimes of photocarriers. Various calculations find that a dynamical Rashba effect could significantly contribute to these long lifetimes. This effect is predicted to cause a spin splitting of the electronic bands of inversion-symmetric crystalline materials at finite temperatures, resulting in a slightly indirect band gap. Direct experimental evidence of the existence or the strength of the spin splitting is lacking. Here, we resonantly excite photocurrents in single crystalline ([Formula: see text])[Formula: see text] with circularly polarized light to clarify the existence of spin splittings in the band structure. We observe a circular photogalvanic effect, i.e., the photocurrent depends on the light helicity, in both orthorhombic and tetragonal ([Formula: see text])[Formula: see text] At room temperature, the effect peaks for excitation photon energies [Formula: see text] meV below the direct optical band gap. Temperature-dependent measurements reveal a sign change of the effect at the orthorhombic-tetragonal phase transition, indicating different microscopic origins in the two phases. Within the tetragonal phase, both [Formula: see text] and the amplitude of the circular photogalvanic effect increase with temperature. Our findings support a dynamical Rashba effect in this phase, i.e., a spin splitting caused by thermally induced structural fluctuations which break inversion symmetry.

Light-field-driven currents in graphene.

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10-15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10-18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in graphene take place on a hitherto unexplored timescale, faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). We expect these results to have direct ramifications for band-structure tomography and light-field-driven petahertz electronics.

Anomalous Dirac point transport due to extended defects in bilayer graphene.

Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the distribution of conductivities is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.In seemingly indistinguishable bilayer graphene samples, two distinct transport regimes, insulating and metallic, have been identified experimentally. Here, the authors demonstrate that these two states originate from the interplay between extended defects and evanescent modes at the Dirac point.

Charge transport in C60-based single-molecule junctions with graphene electrodes.

We investigate charge transport in C60-based single-molecule junctions with graphene electrodes employing a combination of density functional theory (DFT) electronic structure calculations and Landauer transport theory. In particular, the dependence of the transport properties on the conformation of the molecular bridge and the type of termination of the graphene electrodes is investigated. Furthermore, electron pathways through the junctions are analyzed using the theory of local currents. The results reveal, in agreement with previous experiments, a pronounced dependence of the transport properties on the bias polarity, which is rationalized in terms of the electronic structure of the molecule. It is also shown that the edge states of zigzag-terminated graphene induce additional transport channels, which dominate transport at low voltages. The importance of the edge states for transport depends profoundly on the interface geometry of the junctions.

An electrical analogy to Mie scattering.

Mie scattering is an optical phenomenon that appears when electromagnetic waves, in particular light, are elastically scattered at a spherical or cylindrical object. A transfer of this phenomenon onto electron states in ballistic graphene has been proposed theoretically, assuming a well-defined incident wave scattered by a perfectly cylindrical nanometer scaled potential, but experimental fingerprints are lacking. We present an experimental demonstration of an electrical analogue to Mie scattering by using graphene as a conductor, and circular potentials arranged in a square two-dimensional array. The tabletop experiment is carried out under seemingly unfavourable conditions of diffusive transport at room-temperature. Nonetheless, when a canted arrangement of the array with respect to the incident current is chosen, cascaded Mie scattering results robustly in a transverse voltage. Its response on electrostatic gating and variation of potentials convincingly underscores Mie scattering as underlying mechanism. The findings presented here encourage the design of functional electronic metamaterials.