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1.
Small ; 18(9): e2105513, 2022 Mar.
Article in English | MEDLINE | ID: mdl-34989132

ABSTRACT

Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is extremely challenging. To this end, η4 -2,3-dimethylbutadiene ruthenium(0) tricarbonyl (Ru(DMBD)(CO)3 ), a zero-valent complex, has recently been reported to achieve good nucleation by ALD at relatively low temperatures and mild reaction conditions. The authors study the growth mechanism of this precursor by in situ quartz-crystal microbalance and quadrupole mass spectrometry during Ru ALD, complemented by ex situ film characterization and kinetic modeling. These studies reveal that Ru(DMBD)(CO)3 produces high-quality Ru films with excellent nucleation properties. This results in smooth, coalesced films even at low film thicknesses, all important traits for device applications. However, Ru deposition follows a kinetically limited decarbonylation reaction scheme, akin to typical chemical vapor deposition processes, with a strong dependence on both temperature and reaction timescale. The non-self-limiting nature of the kinetically driven mechanism presents both challenges for ALD implementation and opportunities for process tuning. By surveying reports of similar precursors, it is suggested that the findings can be generalized to the broader class of zero-oxidation state carbonyl-based precursors used in thermal ALD, with insight into the design of effective saturation studies.

2.
Sci Rep ; 8(1): 11160, 2018 07 24.
Article in English | MEDLINE | ID: mdl-30042433

ABSTRACT

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO2 based memristive cells is studied. An extensive characterization of HfO2 based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells' behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.


Subject(s)
Computer Storage Devices , Electric Conductivity , Electric Impedance , Hafnium/analysis , Hafnium/chemistry , Oxides/analysis , Oxides/chemistry , Transistors, Electronic , Algorithms , Carbon/analysis , Carbon/chemistry , Crystallization , Hot Temperature , Micro-Electrical-Mechanical Systems , Microscopy, Electron, Transmission , Models, Theoretical , Oxygen/analysis , Photoelectron Spectroscopy , X-Ray Diffraction
3.
Nano Lett ; 7(6): 1637-42, 2007 Jun.
Article in English | MEDLINE | ID: mdl-17530912

ABSTRACT

A linker-free method to deposit citrate-stabilized Au colloids onto hydrogen-terminated Si by acidifying the Au colloid solution with HF or HCl is presented. This method prevents oxide formation and provides a model system for studying orientation control of nanowires by epitaxy. Conditions are reported that result in vertically oriented Ge nanowires of uniform diameter and length on Si(111). We then present a method to remove Au catalysts from the nanowires with aqueous triiodide and HCl.


Subject(s)
Crystallization/methods , Germanium/chemistry , Gold Colloid/chemistry , Nanotechnology/instrumentation , Nanotubes/chemistry , Nanotubes/ultrastructure , Silicon/chemistry , Gold/isolation & purification , Macromolecular Substances/chemistry , Materials Testing , Molecular Conformation , Nanotechnology/methods , Particle Size , Surface Properties
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