ABSTRACT
BACKGROUND: Nonalcoholic fatty liver disease (NAFLD) is associated with disordered lipid and iron metabolism. Our previous study has substantiated the pivotal role of Caveolin-1 (Cav-1) in protecting hepatocytes and mediating iron metabolism in the liver. This study aimed to explore the specific mechanisms underlying the regulation of iron metabolism by Cav-1 in NAFLD. METHODS: Hepatocyte-specific Cav-1 overexpression mice and knockout mice were used in this study. Cav-1-knockdown of RAW264.7 cells and mouse primary hepatocytes were performed to verify the changes in vitro. Moreover, a high-fat diet and palmitic acid plus oleic acid treatment were utilized to construct a NAFLD model in vivo and in vitro, respectively, while a high-iron diet was used to construct an in vivo iron overload model. Besides, iron concentration, the expression of Cav-1 and iron metabolism-related proteins in liver tissue or serum were detected using iron assay kit, Prussian blue staining, Western blotting, immunofluorescence staining, immunohistochemical staining and ELISA. The related indicators of lipid metabolism and oxidative stress were evaluated by the corresponding reagent kit and staining. RESULTS: Significant disorder of lipid and iron metabolism occurred in NAFLD. The expression of Cav-1 was decreased in NAFLD hepatocytes (P < 0.05), accompanied by iron metabolism disorder. Cav-1 enhanced the iron storage capacity of hepatocytes by activating the ferritin light chain/ferritin heavy chain pathway in NAFLD, subsequently alleviating the oxidative stress induced by excess ferrous ions in the liver. Further, CD68+CD163+ macrophages expressing Cav-1 were found to accelerate iron accumulation in the liver, which was contrary to the effect of Cav-1 in hepatocytes. Positive correlations were also observed between the serum Cav-1 concentration and the serum iron-related protein levels in NAFLD patients and healthy volunteers (P < 0.05). CONCLUSIONS: These findings confirm that Cav-1 is an essential target protein that regulates iron and lipid metabolic homeostasis. It is a pivotal molecule for predicting and protecting against the development of NAFLD.
Subject(s)
Non-alcoholic Fatty Liver Disease , Humans , Mice , Animals , Non-alcoholic Fatty Liver Disease/metabolism , Iron/metabolism , Caveolin 1/metabolism , LipidsABSTRACT
Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κl ) and enhance the thermoelectric figure of merit (zT). Through a new process based on melt-centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κl compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid-fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb)2 Te3 alloys. A segmented leg of melt-centrifuged Bi0.5 Sb1.5 Te3 and Bi0.3 Sb1.7 Te3 could produce a high device ZT exceeding 1.0 over the whole temperature range of 323-523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high-efficiency porous thermoelectric materials through an unconventional melt-centrifugation technique.
ABSTRACT
Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT Here we show a maximum ZT of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
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AgBiSe2 and AgSbSe2, two typical examples of Te-free I-V-VI2 chalcogenides, are drawing much attention due to their promising thermoelectric performance. Both compounds were synthesized via melting and consolidated by spark plasma sintering. The role of annealing on the transport properties of polymorphous AgBiSe2 and monophase AgSbSe2 was studied. Annealing has a greater impact on AgBiSe2 than AgSbSe2, which is ascribed to the temperature dependent phase transition of AgBiSe2. Unannealed AgBiSe2 shows p-n switching, but annealed AgBiSe2 exhibits n-type semiconducting behavior over the whole measurement temperature range. By performing high-temperature Hall measurements, we attribute this intriguing variation to the change in the amount of Ag vacancies and mid-temperature rhombohedral phase after annealing. Both AgBiSe2 and AgSbSe2 exhibit low thermal conductivity values, which are â¼0.40-0.50 W m-1 K-1 for AgSbSe2 and â¼0.45-0.70 W m-1 K-1 for AgBiSe2, respectively. The maximum ZT value of AgBiSe2 is enhanced from 0.18 to 0.21 after annealing. Pristine AgSbSe2 presents a ZT value as high as 0.60 at 623 K, although slight deterioration emerges after annealing.
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Nanoporous architecture has long been predicted theoretically for its proficiency in suppressing thermal conduction, but less concerned as a practical approach for better thermoelectric materials hitherto probably due to its technical challenges. This article demonstrates a study on nanoporous PbSe-SiO2 composites fabricated by a facile method of mechanical alloying assisted by subsequent wet-milling and then spark plasma sintering. Owing to the formation of random nanopores and additional interface scattering, the lattice thermal conductivity is limited to a value as low as 0.56 W m-1 K-1 at above 600 K, almost the same low level achieved by introducing nanoscale precipitates. Besides, the room-temperature electrical transport is found to be dominated by the grain-boundary potential barrier scattering, whose effect fades away with increasing temperatures. Consequently, a maximum ZT of 1.15 at 823 K is achieved in the PbSe + 0.7 vol% SiO2 composition with >20% increase in average ZT, indicating the great potential of nanoporous structuring toward high thermoelectric conversion efficiency.
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Bi2Te3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi2Te2.2Se0.8-silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self-tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the "in situ" CuI nanoprecipitates acting as phonon-scattering centers. Over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi2Te3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9-1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.
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P-type SnS compound and SnS1-xSex solid solutions were prepared by mechanical alloying followed by spark plasma sintering (SPS) and their thermoelectric properties were then studied in different compositions (x = 0.0, 0.2, 0.5, 0.8) along the directions parallel (//) and perpendicular (â¥) to the SPS-pressurizing direction in the temperature range 323-823 Κ. SnS compound and SnS1-xSex solid solutions exhibited anisotropic thermoelectric performance and showed higher power factor and thermal conductivity along the direction ⥠than the // one. The thermal conductivity decreased with increasing contents of Se and fell to 0.36 W m-1 K-1 at 823 K for the composition SnS0.5Se0.5. With increasing selenium content (x) the formation of solid solutions substantially improved the electrical conductivity due to the increased carrier concentration. Hence, the optimized power factor and reduced thermal conductivity resulted in a maximum ZT value of 0.64 at 823 K for SnS0.2Se0.8 along the parallel direction.
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Recent findings about ultrahigh thermoelectric performance in SnSe single crystals have stimulated related research on this simple binary compound, which is focused mostly on its polycrystalline counterparts, and particularly on electrical property enhancement by effective doping. This work systematically investigated the thermoelectric properties of polycrystalline SnSe doped with three alkali metals (Li, Na, and K). It is found that Na has the best doping efficiency, leading to an increase in hole concentration from 3.2 × 10(17) to 4.4 × 10(19) cm(-3) at room temperature, accompanied by a drop in Seebeck coefficient from 480 to 142 µV/K. An equivalent single parabolic band model was found adequate to capture the variation tendency of Seebeck coefficient with doping levels within a wide range. A mixed scattering of carriers by acoustic phonons and grain boundaries is suitable for numerically understanding the temperature-dependence of carrier mobility. A maximum ZT of â¼0.8 was achieved in 1% Na- or K-doped SnSe at 800 K. Possible strategies to improve the mobility and ZT of polycrystals were also proposed.
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SnSe, a "simple" and "old" binary compound composed of earth-abundant elements, has been reported to exhibit a high thermoelectric performance in single crystals, which stimulated recent interest in its polycrystalline counterparts. This work investigated the electrical and thermal transport properties of pristine and Na-doped SnSe1-xTex polycrystals prepared by mechanical alloying and spark plasma sintering. It is revealed that SnSe1-xTex solid solutions are formed when x ranges from 0 to 0.2. An energy barrier scattering mechanism is suitable for understanding the electrical conducting behaviour observed in the present SnSe polycrystalline materials, which may be associated with abundant defects at grain boundaries. The thermal conductivity was greatly reduced upon Te substitution due to alloy scattering of phonons as well explained by the Debye model. Due to the increased carrier concentration by Na-doping, thermoelectric figure of merit (ZT) was enhanced in the whole temperature range with a maximum value of 0.72 obtained at a relatively low temperature (773 K) for Sn0.99Na0.01Se0.84Te0.16.
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Both lead selenide (PbSe) and tin selenide (SnSe) are promising thermoelectric compounds consisting of earth-abundant elements, between which solid solutions can be formed over a wide composition range. This study investigated the electrical and thermal transport properties of n-type Pb1-xSnxSe (x = 0, 0.01, 0.05, 0.1 and 0.15) solid solutions with emphasis on the effect of Sn substitution. Small amounts of Sn substitution (x ≤ 0.1) increased electrical conductivity but showed less influence on the Seebeck coefficient, leading to improved power factors, which were revealed to be associated with the generation of native Se vacancies. The electrical conductivity tended to decrease when x > 0.1 due to the alloying effect, consequently the thermoelectric figure of merit was not further increased, even though the thermal conductivity can be reduced by increasing Sn content. A maximum dimensionless figure of merit ZT of up to 1.0 was obtained at moderate temperature (773 K) for the composition of Pb0.9Sn0.1Se.