Tunneling current-controlled spin states in few-layer van der Waals magnets.

Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

Visible-light-catalyzed synthesis of 1,3-benzoxazines via formal [4 + 2] cycloaddition of oximes with o-hydroxybenzyl alcohols.

A formal [4 + 2] cycloaddition of oximes with o-hydroxybenzyl alcohols was developed to easily synthesize diverse 1,3-benzoxazine derivatives. This synthesis was achieved under visible light-based organocatalytic and TsOH conditions. The reaction proceeds through the photoisomerization of oximes via visible light-mediated energy transfer, followed by the nucleophilic attack of o-QMs to oximes as a 1,2-dipole synthon, cyclization, and isomerization. The reaction exhibits a broad substrate scope and can be carried out under mild conditions. To demonstrate its synthetic usefulness, a gram-scale reaction was conducted, and the resulting 1,3-benzoxazine products were further transformed into other valuable compounds.

Metal-Free C-S Bond Formation in Elemental Sulfur and Cyclobutanol Derivatives: The Synthesis of Substituted Thiophenes.

A general approach for the metal-free synthesis of thiophenes by tert-cyclobutanols and elemental sulfur has been developed. This protocol provides a strategy for constructing multisubstituted thiophene derivatives via C-S bond formation under air. This reaction shows good functionality tolerance under the reaction conditions, and the mechanism is validated by control experiments and density functional theory calculations.

Large magnetoelectric resistance in the topological Dirac semimetal α-Sn.

The spin-momentum locking of surface states in topological materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magnetoelectric resistance (BMER) effect offers a new approach for information reading and field sensing applications, but the effects demonstrated so far are too weak or for low temperatures. This article reports the first observation of BMER effects in topological Dirac semimetals; the BMER responses were measured at room temperature and were substantially stronger than those reported previously. The experiments used topological Dirac semimetal α-Sn thin films grown on silicon substrates. The films showed BMER responses that are 106 times larger than previously measured at room temperature and are also larger than those previously obtained at low temperatures. These results represent a major advance toward realistic BMER applications. Significantly, the data also yield the first characterization of three-dimensional Fermi-level spin texture of topological surface states in α-Sn.

Erratum: Chiral Spin-Wave Velocities Induced by All-Garnet Interfacial Dzyaloshinskii-Moriya Interaction in Ultrathin Yttrium Iron Garnet Films [Phys. Rev. Lett. 124, 027203 (2020)].

This corrects the article DOI: 10.1103/PhysRevLett.124.027203.

Noninvasive measurements of spin transport properties of an antiferromagnetic insulator.

Antiferromagnetic insulators (AFIs) are of substantial interest because of their potential in the development of next-generation spintronic devices. One major effort in this emerging field is to harness AFIs for long-range spin information communication and storage. Here, we report a noninvasive method to optically access the intrinsic spin transport properties of an archetypical AFI α-Fe2O3 via nitrogen-vacancy (NV) quantum spin sensors. By NV relaxometry measurements, we successfully detect the frequency-dependent dynamic fluctuations of the spin density of α-Fe2O3 along the Néel order parameter, from which an intrinsic spin diffusion constant of α-Fe2O3 is experimentally measured in the absence of external spin biases. Our results highlight the significant opportunity offered by NV centers in diagnosing the underlying spin transport properties in a broad range of high-frequency magnetic materials such as two-dimensional magnets, spin liquids, and magnetic Weyl semimetals, which are challenging to access by the conventional measurement techniques.

Research on homogeneous nucleation and microstructure evolution of aluminium alloy melt.

In this paper, based on the embedded atom method (EAM) potential, molecular dynamics simulations of the solidification process of Al-4 at.%Cu alloy is carried out. The Al-Cu alloy melt is placed at different temperatures for isothermal solidification, and each stage of the entire solidification process is tracked, including homogeneous nucleation, nucleus growth, grain coarsening and microstructure evolution. In the nucleation stage, the transition from high temperature to low temperature manifests a change from spontaneous nucleation mode to divergent nucleation mode. The critical nucleation temperature of the Al-Cu alloy is determined to be about 0.42 T m (T m is the melting point of Al-4 at.%Cu) by calculating the nucleation rate and the crystal nucleus density. In the nucleus growth stage, two ways of growing up are observed, that is, a large crystal nucleus will absorb a smaller heterogeneous crystal nucleus, and two very close crystal nuclei will merge. In the microstructure evolution of the isothermally solidified Al-Cu alloy, it is emerged that the interior of all nanocrystalline grains are long-period stacking structure composed of face centred cubic (FCC) and hexagonal close-packed (HCP). These details provide important information for the production of Al-Cu binary alloy nano-polycrystalline products.

Reconfigurable Spin-Wave Interferometer at the Nanoscale.

Spin waves can transfer information free of electron transport and are promising for wave-based computing technologies with low-power consumption as a solution to severe energy losses in modern electronics. Logic circuits based on the spin-wave interference have been proposed for more than a decade, while it has yet been realized at the nanoscale. Here, we demonstrate the interference of spin waves with wavelengths down to 50 nm in a low-damping magnetic insulator. The constructive and destructive interference of spin waves is detected in the frequency domain using propagating spin-wave spectroscopy, which is further confirmed by the Brillouin light scattering. The interference pattern is found to be highly sensitive to the distance between two magnetic nanowires acting as spin-wave emitters. By controlling the magnetic configurations, one can switch the spin-wave interferometer on and off. Our demonstrations are thus key to the realization of spin-wave computing system based on nonvolatile nanomagnets.

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal.

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. Herein, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator.

A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This Letter reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T = 2-3 K and an AHE at T = 80-300 K. Over T = 3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to a Dzyaloshinskii-Moriya interaction (DMI) at the interface; the DMI strength estimated is substantially higher than that in heavy metal-based systems.

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator.

We report the modification of magnetism in a magnetic insulator Y_{3}Fe_{5}O_{12} thin film by topological surface states (TSS) in an adjacent topological insulator Bi_{2}Se_{3} thin film. Ferromagnetic resonance measurements show that the TSS in Bi_{2}Se_{3} produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y_{3}Fe_{5}O_{12}. Such TSS-induced changes become more pronounced as the temperature decreases from 300 to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

Dithiane-Induced [3+2] Cycloaddition Tactic for the Convergent Synthesis of Dihydropyrrole and Pyrrole Derivatives.

An efficient transition-metal-free tactic for the convergent synthesis of substituted dihydropyrroles and pyrroles by ß-chloro-vinyl dithiane cyclization with a broad range of imines was developed. [3+2] Cyclization and aromatization occur under these reaction conditions providing biologically relevant dihydropyrroles and pyrroles in good yields.

Chiral Spin-Wave Velocities Induced by All-Garnet Interfacial Dzyaloshinskii-Moriya Interaction in Ultrathin Yttrium Iron Garnet Films.

Spin waves can probe the Dzyaloshinskii-Moriya interaction (DMI), which gives rise to topological spin textures, such as skyrmions. However, the DMI has not yet been reported in yttrium iron garnet (YIG) with arguably the lowest damping for spin waves. In this work, we experimentally evidence the interfacial DMI in a 7-nm-thick YIG film by measuring the nonreciprocal spin-wave propagation in terms of frequency, amplitude, and most importantly group velocities using all electrical spin-wave spectroscopy. The velocities of propagating spin waves show chirality among three vectors, i.e., the film normal direction, applied field, and spin-wave wave vector. By measuring the asymmetric group velocities, we extract a DMI constant of 16 µJ/m^{2}, which we independently confirm by Brillouin light scattering. Thickness-dependent measurements reveal that the DMI originates from the oxide interface between the YIG and garnet substrate. The interfacial DMI discovered in the ultrathin YIG films is of key importance for functional chiral magnonics as ultralow spin-wave damping can be achieved.

Magnetization switching using topological surface states.

Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

Current-controlled propagation of spin waves in antiparallel, coupled domains.

Spin waves may constitute key components of low-power spintronic devices. Antiferromagnetic-type spin waves are innately high-speed, stable and dual-polarized. So far, it has remained challenging to excite and manipulate antiferromagnetic-type propagating spin waves. Here, we investigate spin waves in periodic 100-nm-wide stripe domains with alternating upward and downward magnetization in La0.67Sr0.33MnO3 thin films. In addition to ordinary low-frequency modes, a high-frequency mode around 10 GHz is observed and propagates along the stripe domains with a spin-wave dispersion different from the low-frequency mode. Based on a theoretical model that considers two oppositely oriented coupled domains, this high-frequency mode is accounted for as an effective antiferromagnetic spin-wave mode. The spin waves exhibit group velocities of 2.6 km s-1 and propagate even at zero magnetic bias field. An electric current pulse with a density of only 105 A cm-2 can controllably modify the orientation of the stripe domains, which opens up perspectives for reconfigurable magnonic devices.

Spontaneous Exact Spin-Wave Fractals in Magnonic Crystals.

Exact fractals of nonlinear waves that rely on strong dispersion and nonlinearity and arise spontaneously out of magnetic media were observed for the first time. The experiments make use of a microwave to excite a spin wave in a quasi-one-dimensional magnonic crystal. When the power of the input microwave (P_{in}) is low, the output signal has a power-frequency spectrum that consists of a single peak. When P_{in} is increased to a certain level, new side modes are generated through modulational instability, resulting in a comblike frequency spectrum. With a further increase in P_{in}, each peak in the frequency comb can evolve into its own finer comb through the modulational instability. As P_{in} is increased further, one can observe yet another set of finer frequency combs. Such a frequency-domain fractal manifests itself as multiple layers of amplitude modulation in the time-domain signal.

Strong Interlayer Magnon-Magnon Coupling in Magnetic Metal-Insulator Hybrid Nanostructures.

We observe strong interlayer magnon-magnon coupling in an on-chip nanomagnonic device at room temperature. Ferromagnetic nanowire arrays are integrated on a 20-nm-thick yttrium iron garnet (YIG) thin film strip. Large anticrossing gaps up to 1.58 GHz are observed between the ferromagnetic resonance of the nanowires and the in-plane standing spin waves of the YIG film. Control experiments and simulations reveal that both the interlayer exchange coupling and the dynamical dipolar coupling contribute to the observed anticrossings. The coupling strength is tunable by the magnetic configuration, allowing the coherent control of magnonic devices.

Nontrivial Nature and Penetration Depth of Topological Surface States in SmB_{6} Thin Films.

The nontrivial feature and penetration depth of the topological surface states (TSS) in SmB_{6} were studied via spin pumping. The experiments used SmB_{6} thin films grown on the bulk magnetic insulator Y_{3}Fe_{5}O_{12} (YIG). Upon the excitation of magnetization precession in the YIG, a spin current is generated in the SmB_{6} that produces, via spin-orbit coupling, a lateral electrical voltage in the film. This spin-pumping voltage signal becomes considerably stronger as the temperature decreases from 150 to 10 K, and such an enhancement most likely originates from the spin-momentum locking of the TSS and may thereby serve as evidence for the nontrivial nature of the TSS. The voltage data also show a unique film thickness dependence that suggests a TSS depth of ∼32 nm. The spin-pumping results are supported by transport measurements and analyses using a tight binding model.

Long-distance propagation of short-wavelength spin waves.

Recent years have witnessed a rapidly growing interest in exploring the use of spin waves for information transmission and computation toward establishing a spin-wave-based technology that is not only significantly more energy efficient than the CMOS technology, but may also cause a major departure from the von-Neumann architecture by enabling memory-in-logic and logic-in-memory architectures. A major bottleneck of advancing this technology is the excitation of spin waves with short wavelengths, which is a must because the wavelength dictates device scalability. Here, we report the discovery of an approach for the excitation of nm-wavelength spin waves. The demonstration uses ferromagnetic nanowires grown on a 20-nm-thick Y3Fe5O12 film strip. The propagation of spin waves with a wavelength down to 50 nm over a distance of 60,000 nm is measured. The measurements yield a spin-wave group velocity as high as 2600 m s-1, which is faster than both domain wall and skyrmion motions.

Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS2 and Yttrium Iron Garnet.

Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D TMDCs) exhibit an emerging valley pseudospin, in which spin-up (-down) electrons are distributed in a +K (-K) valley. This valley polarization gives a DOF for spintronic and valleytronic devices. Recently, magnetic exchange interactions between graphene and magnetic insulator yttrium iron garnet (YIG) have been exploited. However, the physics of 2D TMDCs with YIG have not been shown before. Here we demonstrate strong many-body effects in a heterostructure geometry comprising a MoS2 monolayer and YIG. High-order trions are directly identified by mapping absorption and photoluminescence at 12 K. The electron doping density is up to ∼1013 cm-2, resulting in a large splitting of ∼40 meV between trions and excitons. The trions exhibit a high circular polarization of ∼80% under optical pumping by circularly polarized light at ∼1.96 eV; it is confirmed experimentally that both phonon scattering and electron-hole exchange interaction contribute to the valley depolarization with temperature; importantly, a magnetoresistance (MR) behavior in the MoS2 monolayer was observed, and a giant MR ratio of ∼30% is achieved, which is 1 order of magnitude larger than the reported ratio in MoS2/CoFe2O4 heterostructures. Our experimental results confirm that the giant MR behaviors are attributed to the interfacial spin accumulation due to YIG substrates. Our work provides an insight into spin manipulation in a heterostructure of monolayer materials and magnetic substrates.