Research Progresses in Microstructure Designs of Flexible Pressure Sensors.

Flexible electronic technology is one of the research hotspots, and numerous wearable devices have been widely used in our daily life. As an important part of wearable devices, flexible sensors can effectively detect various stimuli related to specific environments or biological species, having a very bright development prospect. Therefore, there has been lots of studies devoted to developing high-performance flexible pressure sensors. In addition to developing a variety of materials with excellent performances, the microstructure designs of materials can also effectively improve the performances of sensors, which has brought new ideas to scientists and attracted their attention increasingly. This paper will summarize the flexible pressure sensors based on material microstructure designs in recent years. The paper will mainly discuss the processing methods and characteristics of various sensors with different microstructures, and compare the advantages, disadvantages, and application scenarios of them. At the same time, the main application fields of flexible pressure sensors based on microstructure designs will be listed, and their future development and challenges will be discussed.

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate.

Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10-10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.