ABSTRACT
Fluorine-treated titanium nitride-silicon oxide-hafnium oxide-silicon oxide-silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal-oxide-nitride-oxide-silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal-oxide-hafnium oxide-oxide-silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future.
ABSTRACT
To improve electron field emission properties of anodic aluminum oxide (AAO) templated Si nanotips, IrO2 nanoparticles were deposited on the nanotips using bipolar pulse electrodeposition method. The IrO2 nanoparticles had a uniform size distribution with an average value of approximately 4 nm, and well dispersed on the ordered Si nanotips. Due to the small radius and a lower work function, the IrO2/Si nanotip exhibited field emission properties better than the bare Si nanotip with a field enhancement factor of approximately 128. The SEM and TEM were utilized to investigate the structure and morphology. The physical and chemical properties were evaluated XRD and X-ray photoelectron spectroscopy (XPS).