Predictive potential of preoperative Naples prognostic score-based nomogram model for the prognosis in surgical resected thoracic esophageal squamous cell carcinoma patients: A retrospective cohort study.

The present study aimed to establish an effective prognostic nomogram model based on the Naples prognostic score (NPS) for resectable thoracic esophageal squamous cell carcinoma (ESCC). A total of 277 patients with ESCC, who underwent standard curative esophagectomy and designated as study cohort, were retrospectively analyzed. The patients were divided into different groups, including NPS 0, NPS 1, NPS 2, and NPS 3 or 4 groups, for further analysis, and the results were validated in an external cohort of 122 ESCC patients, who underwent surgery at another cancer center. In our multivariate analysis of the study cohort showed that the tumor-node-metastasis (TNM) stage, systemic inflammation score, and NPS were the independent prognostic factors for the overall survival (OS) and progression-free survival (PFS) durations. In addition, the differential grade was also an independent prognostic factor for the OS in the patients with ESCC after surgery (all P < .05). The area under the curve of receiver operator characteristics for the PFS and OS prediction with systemic inflammation score and NPS were 0.735 (95% confidence interval [CI] 0.676-0.795, P < .001) and 0.835 (95% CI 0.786-0.884, P < .001), and 0.734 (95% CI 0.675-0.793, P < .001) and 0.851 (95% CI 0.805-0.896, P < .001), respectively. The above independent predictors for OS or PFS were all selected in the nomogram model. The concordance indices (C-indices) of the nomogram models for predicting OS and PFS were 0.718 (95% CI 0.681-0.755) and 0.669 (95% CI 0.633-0.705), respectively, which were higher than that of the 7th edition of American Joint Committee on Cancer TNM staging system [C-index 0.598 (95% CI 0.558-0.638) for OS and 0.586 (95% CI 0.546-0.626) for PFS]. The calibration curves for predicting the 5-year OS or PFS showed a good agreement between the prediction by nomogram and actual observation. In the external validation cohort, the nomogram discrimination for OS was better than that of the 7th edition of TNM staging systems [C-index: 0.697 (95% CI 0.639-0.755) vs 0.644 (95% CI 0.589-0.699)]. The calibration curves showed good consistency in predicting the 5-year survival between the actual observation and nomogram predictions. The decision curve also showed a higher potential of the clinical application of predicting the 5-years OS of the proposed nomogram model as compared to that of the 7th edition of TNM staging systems. The preoperative NPS-based nomogram model had a certain potential role for predicting the prognosis of ESCC patients.

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films.

Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces.

Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.

Stack growth of wafer-scale van der Waals superconductor heterostructures.

Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24.

Trapping Hydrogen Molecules between Perfect Graphene.

There is a lack of deep understanding of hydrogen intercalation into graphite due to many challenges faced during characterization of the systems. Therefore, a suitable route to trap isolated hydrogen molecules (H2) between the perfect graphite lattices needs to be found. Here we realize the formation of hydrogen bubbles in graphite with controllable density, size, and layer number. We find that the molecular H2 cannot be diffused between nor escape from the defect-free graphene lattices, and it remains stable in the pressurized bubbles up to 400 °C. The internal pressure of H2 inside the bubbles is strongly temperature dependent, and it decreases as the temperature rises. The proton permeation rate can be estimated at a specific plasma power. The producing method of H2 bubbles offers a useful way for storing hydrogen in layered materials, and these materials provide a prospective research platform for studying nontrivial quantum effects in confined H2.

Long non-coding RNA GNAS-AS1 knockdown inhibits proliferation and epithelial-mesenchymal transition of lung adenocarcinoma cells via the microRNA-433-3p/Rab3A axis.

The goal of this study was to demonstrate the functions and specific mechanism of long non-coding RNA (lncRNA) GNAS-AS1 in lung adenocarcinoma. Levels of lncRNA GNAS-AS1, microRNA (miR)-433-3p, and Rab3A were assessed by quantitative real-time PCR (qRT-PCR). The target-binding sites of lncRNA GNAS-AS1, miR-433-3p, and Rab3A were predicted and confirmed by bioinformatics tool (StarBase) and a dual-luciferase reporter system. Cell proliferation and apoptosis were checked using MTT and flow cytometry, respectively. Additionally, the levels of apoptosis-related and epithelial-mesenchymal transition (EMT)-associated genes in A549 cells were analyzed by qRT-PCR and western blot. We found that lncRNA GNAS-AS1 was upregulated, miR-433-3p was low-expressed, and Rab3A was overexpressed in lung adenocarcinoma tissues and cell lines. LncRNA GNAS-AS1 interacted with miR-433-3p and negatively regulated miR-433-3p levels. Rab3A was a direct target of miR-433-3p. Downregulation of lncRNA GNAS-AS1 remarkably suppressed cell proliferation, promoted cell apoptosis, decreased B-cell lymphoma-2 (Bcl-2) expression, enhanced the Bcl-2-Associated X (Bax) level, promoted E-cadherin expression, and reduced N-cadherin and Rab3A levels. However, the miR-433-3p inhibitor reversed all these findings. Similarly, the inhibitory effects of miR-433-3p mimic on A549 cells were reversed by the Rab3A-plasmid. In conclusion, lncRNA GNAS-AS1 downregulation suppressed lung adenocarcinoma cell proliferation and EMT through the miR-433-3p/Rab3A axis.

Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces.

The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.

Absence of near-ambient superconductivity in LuH2±xNy.

A recent study demonstrated near-ambient superconductivity in nitrogen-doped lutetium hydride1. This stimulated a worldwide interest in exploring room-temperature superconductivity at low pressures. Here, by using a high-pressure and high-temperature synthesis technique, we have obtained nitrogen-doped lutetium hydride (LuH2±xNy), which has a dark-blue colour and a structure with the space group [Formula: see text] as evidenced by X-ray diffraction. This structure is the same as that reported in ref. 1, with a slight difference in lattice constant. Raman spectroscopy of our samples also showed patterns similar to those observed in ref. 1. Energy-dispersive X-ray spectroscopy confirmed the presence of nitrogen in the samples. We observed a metallic behaviour from 350 K to 2 K at ambient pressure. On applying pressures from 2.1 GPa to 41 GPa, we observed a gradual colour change from dark blue to violet to pink-red. By measuring the resistance at pressures ranging from 0.4 GPa to 40.1 GPa, we observed a progressively improved metallic behaviour; however, superconductivity was not observed above 2 K. Temperature dependence of magnetization at high pressure shows a very weak positive signal between 100 K and 320 K, and the magnetization increases with an increase in magnetic field at 100 K. All of these are not expected for superconductivity above 100 K. Thus, we conclude the absence of near-ambient superconductivity in this nitrogen-doped lutetium hydride at pressures below 40.1 GPa.

Electrical switching of ferro-rotational order in nanometre-thick 1T-TaS2 crystals.

Hysteretic switching of domain states is a salient characteristic of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a type of ferroic order that features structural rotations, but control over state switching remains elusive due to its invariance under both time reversal and spatial inversion. Here we demonstrate electrical switching of ferro-rotational domain states in the charge-density-wave phases of nanometre-thick 1T-TaS2 crystals. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, which is realized in a simple two-terminal configuration using a volt-scale bias. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable and non-volatile isothermal state switching at room temperature. These results offer a route to the manipulation of ferro-rotational order and its nanoelectronic applications.

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial ß-In2Se3 Thin Films.

Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In2Se3 has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of ß-In2Se3 films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer ß-In2Se3 is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer ß-In2Se3/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In2Se3 film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality ß-In2Se3 thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial ß-In2Se3 films.

Enhanced Superconductivity and Upper Critical Field in Ta-Doped Weyl Semimetal Td -MoTe2.

2D transition metal dichalcogenides are promising platforms for next-generation electronics and spintronics. The layered Weyl semimetal (W,Mo)Te2 series features structural phase transition, nonsaturated magnetoresistance, superconductivity, and exotic topological physics. However, the superconducting critical temperature of the bulk (W,Mo)Te2 remains ultralow without applying a high pressure. Here, the significantly enhanced superconductivity is observed with a transition temperature as large as about 7.5 K in bulk Mo1- x Tax Te2 single crystals upon Ta doping (0 ≤ x ≤ 0.22), which is attributed to an enrichment of density of states at the Fermi level. In addition, an enhanced perpendicular upper critical field of 14.5 T exceeding the Pauli limit is also observed in Td -phase Mo1- x Tax Te2 (x = 0.08), indicating the possible emergence of unconventional mixed singlet-triplet superconductivity owing to the inversion symmetry breaking. This work provides a new pathway for exploring the exotic superconductivity and topological physics in transition metal dichalcogenides.

Axial-Bonding-Driven Dimensionality Effect on the Charge-Density Wave in NbSe2.

2H-NbSe2 is a prototypical charge-density-wave (CDW) system, exhibiting such a symmetry-breaking quantum ground state in its bulk and down to a single-atomic-layer limit. However, how this state depends on dimensionality and what governs the dimensionality effect remain controversial. Here, we experimentally demonstrate a robust 3 × 3 CDW phase in both freestanding and substrate-supported bilayer NbSe2, far above the bulk transition temperature. We exclude environmental effects and reveal a strong temperature and thickness dependence of Raman intensity from an axially vibrating A1g phonon mode, involving Se ions. Using first-principles calculations, we show that these result from a delicate but profound competition between the intra- and interlayer bonding formed between Se-pz orbitals. Our results suggest the crucial role of Se out-of-plane displacement in driving the CDW distortion, revealing the Se-dominated dimensionality effect and establishing a new perspective on the chemical bonding and mechanical stability in layered CDW materials.

Observation of anomalous amplitude modes in the kagome metal CsV3Sb5.

The kagome lattice provides a fertile platform to explore novel symmetry-breaking states. Charge-density wave (CDW) instabilities have been recently discovered in a new kagome metal family, commonly considered to arise from Fermi-surface instabilities. Here we report the observation of Raman-active CDW amplitude modes in CsV3Sb5, which are collective excitations typically thought to emerge out of frozen soft phonons, although phonon softening is elusive experimentally. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which phonon softening can cease to exist. Our work highlights the importance of the lattice degree of freedom in the CDW formation and points to the complex nature of the mechanism.

Nickel-Catalyzed Three-Component Alkylacylation of Alkenes Enabled by a Photoactive Electron Donor-Acceptor Complex.

An electron donor-acceptor complex-enabled, nickel-catalyzed three-component net-reductive 1,2-alkylacylation of alkenes is developed. This conjunctive reductive acyl cross-coupling process obviates the use of an exogenous photocatalyst and a stoichiometric metal-based reductant, affording various synthetically useful 1,3-dicarbonyl compounds in good yields with a broad substrate scope and excellent functional group tolerance. Both alkyl and acyl electrophiles are derived from the highly abundant and readily accessible carboxylic acids, making the catalytic 1,2-dicarbofunctionalization more synthetically general and sustainable.

From Esters to Ketones via a Photoredox-Assisted Reductive Acyl Cross-Coupling Strategy.

A method was developed for ketone synthesis via a photoredox-assisted reductive acyl cross-coupling (PARAC) using a nickel/photoredox dual-catalyzed cross-electrophile coupling of two different carboxylic acid esters. A variety of aryl, 1°, 2°, 3°-alkyl 2-pyridyl esters can act as acyl electrophiles while N-(acyloxy)phthalimides (NHPI esters) act as 1°, 2°, 3°-radical precursors. Our PARAC strategy provides an alternative and reliable way to synthesize various sterically congested 3°-3°, 3°-2°, and aryl-3° ketones under mild and highly unified conditions, which have been otherwise difficult to access. The combined experimental and computational studies identified a Ni0 /NiI /NiIII pathway for ketone formation.

Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma.

Graphene was reported as the first-discovered two-dimensional material, and the thermal decomposition of SiC is a feasible route to prepare graphene films. However, it is difficult to obtain a uniform single-layer graphene avoiding the coexistence of multilayer graphene islands or bare substrate holes, which give rise to the degradation of device performance and becomes an obstacle for the further applications. Here, with the assistance of nitrogen plasma, we successfully obtained high-quality single-layer and bilayer graphene with large-scale and uniform surface via annealing 4H-SiC(0001) wafers. The highly flat surface and ordered terraces of the samples were characterized using in situ scanning tunneling microscopy. The Dirac bands in single-layer and bilayer graphene were measured using angle-resolved photoemission spectroscopy. X-ray photoelectron spectroscopy combined with Raman spectroscopy were used to determine the composition of the samples and to ensure no intercalation or chemical reaction of nitrogen with graphene. Our work has provided an efficient way to obtain the uniform single-layer and bilayer graphene films grown on a semiconductive substrate, which would be an ideal platform for fabricating two-dimensional devices based on graphene.

Epitaxial Growth of Single-Phase 1T'-WSe2 Monolayer with Assistance of Enhanced Interface Interaction.

The WSe2 monolayer in 1T' phase is reported to be a large-gap quantum spin Hall insulator, but is thermodynamically metastable and so far the fabricated samples have always been in the mixed phase of 1T' and 2H, which has become a bottleneck for further exploration and potential applications of the nontrivial topological properties. Based on first-principle calculations in this work, it is found that the 1T' phase could be more stable than 2H phase with enhanced interface interactions. Inspired by this discovery, SrTiO3 (100) is chosen as substrate and WSe2 monolayer is successfully grown in a 100% single 1T' phase using the molecular beam epitaxial method. Combining in situ scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements, it is found that the in-plane compressive strain in the interface drives the 1T'-WSe2 into a semimetallic phase. Besides providing a new material platform for topological states, the results show that the interface interaction is a new approach to control both the structure phase stability and the topological band structures of transition metal dichalcogenides.

Selective 1,2-Aryl-Aminoalkylation of Alkenes Enabled by Metallaphotoredox Catalysis.

A highly chemo- and regioselective intermolecular 1,2-aryl-aminoalkylation of alkenes by photoredox/nickel dual catalysis is described here. This three-component conjunctive cross-coupling is highlighted by its first application of primary alkyl radicals, which were not compatible in previous reports. The readily prepared α-silyl amines could be transferred to α-amino radicals by photo-induced single electron transfer step. The radical addition/cross-coupling cascade reaction proceeds under mild, base-free and redox-neutral conditions with good functional group tolerance, and importantly, provides an efficient and concise method for the synthesis of structurally valuable α-aryl substituted γ-amino acid derivatives motifs.

Patterns and driving forces of dimensionality-dependent charge density waves in 2H-type transition metal dichalcogenides.

Charge density wave (CDW) is a startling quantum phenomenon, distorting a metallic lattice into an insulating state with a periodically modulated charge distribution. Astonishingly, such modulations appear in various patterns even within the same family of materials. Moreover, this phenomenon features a puzzling diversity in its dimensional evolution. Here, we propose a general framework, unifying distinct trends of CDW ordering in an isoelectronic group of materials, 2H-MX2 (M = Nb, Ta and X = S, Se). We show that while NbSe2 exhibits a strongly enhanced CDW order in two dimensions, TaSe2 and TaS2 behave oppositely, with CDW being absent in NbS2 entirely. Such a disparity is demonstrated to arise from a competition of ionic charge transfer, electron-phonon coupling, and electron correlation. Despite its simplicity, our approach can, in principle, explain dimensional dependence of CDW in any material, thereby shedding new light on this intriguing quantum phenomenon and its underlying mechanisms.