ABSTRACT
Generation and manipulation of spin current are the cores of spintronic devices, which are intensely pursued. Heavy metals with strong spin-orbit coupling are commonly used for the generation of spin current, but are incompatible with the mass production of devices, and the polarization of spin current is limited to be in-plane. Here, it is shown that the spin current with strong out-of-plane polarization component can be generated and transmitted in Ni81 Fe19 /Cu-CuOx bilayer with sideways and top oxidizations. The charge-to-spin current conversion efficiency can be enhanced through the spin currents consisting of both out-of-plane polarization (σz ) and in-plane polarization (σy ) induced by spin-vorticity coupling. Such a spin current is demonstrated to be closely related to the lateral oxidization gradient and can be controlled by changing the temperatures and times of annealing. The finding here provides a novel degree of freedom to produce and control the spin current in spintronic devices.
ABSTRACT
The control of ferromagnetism by light at room temperature is essential for the development of some optical-magnetic coupling devices, data storage and quantum computation techniques. In the present work, we demonstrate that the ferromagnetism of a semiconducting ZnO film on Pt substrate can be controlled by nonpolarized ultraviolet or violet light. The illumination of light with sufficiently high frequency photons could excite photogenerated electron-hole pairs in the semiconducting ZnO film. The amount of oxygen vacancies in the ZnO film and the appearance of built-in electric field due to the heterostructured ZnO/Pt may play important roles in the light-induced changes in the ferromagnetism of the ZnO film.
ABSTRACT
Electrically induced resistive switching and modulated ferromagnetism are simultaneously found in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory device at room temperature. The bipolar resistive switching (RS) can be controlled by the modification of a Schottky-like barrier with an electron injection-trapped/detrapped process at the interface of HfO2-Nb:SrTiO3. The multilevel RS transition can be observed in the reset process with larger negative voltage sweepings, which is connected to the different degree of electron detrapping in the interfacial depletion region of the HfO2 layer during the reset process. The origin of the electrical control of room-temperature ferromagnetism may be connected to the change of density of oxygen vacancies in the HfO2 film. The multilevel resistance states and the electric field controlled ferromagnetism have potential for applications in ultrahigh-density storage and magnetic logic device.
