ABSTRACT
The deep ultraviolet (DUV) micro-light emitting diode (µLED) has serious electron leakage and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip, the plasma-assisted dry etching process will cause damage to the side wall of the mesa, which will form a carrier leakage channel and produce non-radiative recombination. All of these will reduce the photoelectric performance of µLED. To this end, this study introduces polarized bulk charges into the hole supply layer (p-HSL) and the electron supply layer (n-ESL) respectively (dual-polarized structure) of the DUV µLED at an emission wavelength of 279 nm to enhance the binding of carriers and increase the injection efficiency of carriers. This is because the polarization-induced bulk charge can shield the polarized sheet charge on the interface and reduce the polarization electric field. The reduced polarization electric field in p-HSL can increase the effective barrier height of the conduction band in the p-type region and reduce the effective barrier height of the valence band. The decrease in the polarized electric field of n-HSL can reduce the thermal velocity of electrons, thereby enhancing the electron injection efficiency, reducing the Shockley-Read-Hall (SRH) recombination, and increasing the effective barrier height of the valence band. The study results indicate that the electron concentration and hole concentration of a µLED with dual polarization were increased by 77.93% and 93.6%, respectively. The optical power and maximum external quantum efficiency of µLED reached 31.04 W/cm2 and 2.91% respectively, and the efficiency droop is only 2.06% at 120 A/cm2. These results provide a new approach to solving the problem of insufficient carrier injection and SRH recombination in high-performance DUV µLEDs.
ABSTRACT
The development of catalysts serves as the cornerstone of innovation in synthesis, as exemplified by the recent discovery of photoenzymes. However, the repertoire of naturally occurring enzymes repurposed by direct light excitation to catalyze new-to-nature photobiotransformations is currently limited to flavoproteins and keto-reductases. Herein, we shed light on imine reductases (IREDs) that catalyze the remote C(sp3)-C(sp3) bond formation, providing a previously elusive radical hydroalkylation of enamides for accessing chiral amines (45 examples with up to 99% enantiomeric excess). Beyond their natural function in catalyzing two-electron reductive amination reactions, upon direct visible-light excitation or in synergy with a synthetic photoredox catalyst, IREDs are repurposed to tune the non-natural photoinduced single-electron radical processes. By conducting wet mechanistic experiments and computational simulations, we unravel how engineered IREDs direct radical intermediates toward the productive and enantioselective pathway. This work represents a promising paradigm for harnessing nature's catalysts for new-to-nature asymmetric transformations that remain challenging through traditional chemocatalytic methods.
ABSTRACT
The superlattice electron blocking layer (EBL) has been proposed to reduce the electron leakage of the deep ultraviolet light emitting diodes (DUV-LEDs). However, the hole transport is hindered by the barriers of EBL and the improvement of hole injection efficiency still suffers enormous challenges. The superlattice step doped (SLSD) EBL is proposed to improve the hole injection efficiency while enhancing the electron confinement capability. The SLSD EBL enhances the electron confinement capability by multi-reflection effects on the electron wave function. And a built-in electric field towards the active region is generated by superlattice step doping, which facilitates the transport of holes into the multiple quantum wells. The Advaced Physical Model of Semiconductor Devices (APSYS) software is used to simulate the DUV-LEDs with conventional EBL, superlattice EBL, superlattice doped EBL, and SLSD EBL. The results indicate that the SLSD EBL contributes to the increased electron concentration in the multiple quantum wells, the reduced electron leakage in the p-type region, the increased hole injection current, and the increased radiative recombination rate. When the current is 60â mA, the external quantum efficiency of DUV-LED with SLSD EBL is increased to 5.27% and the output power is increased to 13.81â mW. The SLSD EBL provides a valuable reference for solving the problems of serious electron leakage and insufficient hole injection of the DUV-LEDs.
ABSTRACT
While traditional tunnel junction (TJ) light-emitting diodes (LEDs) can enhance current diffusion and increase hole injection efficiency, their reliance on highly doped AlGaN layers to improve hole tunneling efficiency results in a higher conduction voltage, adversely impacting LED device performance. This paper proposes a non-heavy doped pnp-AlGaN TJ deep ultraviolet (DUV) LED with a low conduction voltage. By inserting the TJ near the active region, between the electron blocking layer and the hole supply layer, the need for heavily doped AlGaN is circumvented. Furthermore, the LED leverages the polarization charge in the pnp-AlGaN TJ layer to decrease the electric field strength, enhancing hole tunneling effects and reducing conduction voltage. The non-heavy doped pnp-AlGaN TJ LED effectively enhances carrier concentration in the quantum well, achieving a more uniform distribution of electrons and holes, thus improving radiative recombination efficiency. Consequently, at an injection current of 120 A/cm2, compared to the traditional structure LED (without TJ), the proposed LED exhibits a 190.7% increase in optical power, a 142.8% increase in maximum internal quantum efficiency (IQE) to 0.85, and a modest efficiency droop of only 5.8%, with a conduction voltage of just 4.1V. These findings offer valuable insights to address the challenges of high heavy doped TJ and elevated conduction voltage in high-performance TJ DUV LEDs.
ABSTRACT
Enzymes are recognized as exceptional catalysts for achieving high stereoselectivities1-3, but their ability to control the reactivity and stereoinduction of free radicals lags behind that of chemical catalysts4. Thiamine diphosphate (ThDP)-dependent enzymes5 are well-characterized systems that inspired the development of N-heterocyclic carbenes (NHCs)6-8 but have not yet been proved viable in asymmetric radical transformations. There is a lack of a biocompatible and general radical-generation mechanism, as nature prefers to avoid radicals that may be harmful to biological systems9. Here we repurpose a ThDP-dependent lyase as a stereoselective radical acyl transferase (RAT) through protein engineering and combination with organophotoredox catalysis10. Enzyme-bound ThDP-derived ketyl radicals are selectively generated through single-electron oxidation by a photoexcited organic dye and then cross-coupled with prochiral alkyl radicals with high enantioselectivity. Diverse chiral ketones are prepared from aldehydes and redox-active esters (35 examples, up to 97% enantiomeric excess (e.e.)) by this method. Mechanistic studies reveal that this previously elusive dual-enzyme catalysis/photocatalysis directs radicals with the unique ThDP cofactor and evolvable active site. This work not only expands the repertoire of biocatalysis but also provides a unique strategy for controlling radicals with enzymes, complementing existing chemical tools.
Subject(s)
Acyltransferases , Biocatalysis , Light , Lyases , Acylation , Acyltransferases/chemistry , Acyltransferases/metabolism , Aldehydes/metabolism , Biocatalysis/radiation effects , Catalytic Domain , Free Radicals/metabolism , Ketones/metabolism , Lyases/chemistry , Lyases/metabolism , Oxidation-Reduction , Protein Engineering , Stereoisomerism , Thiamine Pyrophosphate/metabolismABSTRACT
A photoinduced copper-catalyzed C(sp3)-P bond formation has been developed by using N-(acyloxy)phthalimides as radical precursors and secondary phosphine boranes as coupling partners. A variety of alkyl carboxylic acid derivatives can be readily transformed into the corresponding phosphines with high reaction efficiency and structural diversity. Besides, utilizing the 1,5-HAT of the N-centered radical process, the δ C(sp3)-H bond can be coupled with secondary phosphines, which provides a novel method for the regioselective formation of C(sp3)-P bonds.
ABSTRACT
Aluminum-rich p-AlGaN electron blocking layers (EBLs) are typically used for preventing overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser diode (LD). However, these cannot effectively prevent electron leakage and form barrier layers, which affects the hole injection efficiency. Herein, the traditional p-AlGaN EBL in LD is replaced with an undoped BGaN EBL. The undoped BGaN EBL LD increases the effective barrier height of the conduction band to prevent the leakage of electrons and decreases the energy loss caused by the polarization induced electric field, enhancing the hole injection. The slope efficiency of the undoped BGaN EBL LD is 289% higher than that of the highly doped AlGaN EBL LD, and its threshold current is 51% lower. Therefore, the findings of this study provide insights for solving the problems of electron leakage and insufficient hole injection in high-performance and undoped EBL DUV LDs.