ABSTRACT
The electric-field-modulation (E-modulation) of photoluminescence (PL) properties in bulk ceramics has attracted tremendous interest due to its potential application in optical data storage and communication devices. One promising approach of reversibly and largely modulating the PL intensity has been proposed in rare-earth Er3+-doped Pb0.96La0.04Zr0.9Ti0.1O3 (PLZT) antiferroelectrics (AFEs) based on the unique E-dependent antiferroelectric-ferroelectric (AFE-FE) phase transition. However, the AFE phase stability of PLZT doped with various Er contents and their E-modulated PL properties have not been systematically investigated. In this paper, the intrinsic AFE phase of PLZT-Er is found to be stabilized in the high-temperature and high-E regions with increasing Er3+ content. The enhanced AFE nature caused by increasing Er doping leads to a larger E-dependent PL tunability (â¼35%). Moreover, the ceramics exhibit the characteristics of both upconversion and downconversion PL (UCPL and DCPL) effects. Based on the excellent E-dependent dual-mode PL tunability, an optoelectronic device named the optical latch is demonstrated, where an electric signal can be used to trigger a notable intensity change in both the UCPL and DCPL modes. This reversible E-dependent dual-mode capability in PLZT-Er sheds light on a feasible approach to optoelectronic applications.
