ABSTRACT
The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300 °C on SiO2 substrates followed by annealing at temperatures of 800 °C. Gas sensitivity under exposure to O2 within the temperature range from 30 °C to 700 °C was studied. The ALD-deposited TiO2 thin films demonstrated high responses to O2 in the dynamic range from 0.1 to 100 vol. % and low concentrations of H2, NO2. The ALD deposition allowed the enhancement of sensitivity of TiO2 thin films to gases. The greatest response of TiO2 thin films to O2 was observed at a temperature of 500 °C and was 41.5 arb. un. under exposure to 10 vol. % of O2. The responses of TiO2 thin films to 0.1 vol. % of H2 and 7 × 10-4 vol. % of NO2 at a temperature of 500 °C were 10.49 arb. un. and 10.79 arb. un., correspondingly. The resistance of the films increased due to the chemisorption of oxygen molecules on their surface that decreased the thickness of the conduction channel between the metal contacts. It was suggested that there are two types of adsorption centers on the TiO2 thin films surface: oxygen is chemisorbed in the form of O2- on the first one and O- on the second one.
ABSTRACT
Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed.
ABSTRACT
BACKGROUND: The number line task assesses the ability to estimate numerical magnitudes. People vary greatly in this ability, and this variability has been previously associated with mathematical skills. However, the sources of individual differences in number line estimation and its association with mathematics are not fully understood. AIMS: This large-scale genetically sensitive study uses a twin design to estimate the magnitude of the effects of genes and environments on: (1) individual variation in number line estimation and (2) the covariation of number line estimation with mathematics. SAMPLES: We used over 3,000 8- to 16-year-old twins from the United States, Canada, the United Kingdom, and Russia, and a sample of 1,456 8- to 18-year-old singleton Russian students. METHODS: Twins were assessed on: (1) estimation of numerical magnitudes using a number line task and (2) two mathematics components: fluency and problem-solving. RESULTS: Results suggest that environments largely drive individual differences in number line estimation. Both genes and environments contribute to different extents to the number line estimation and mathematics correlation, depending on the sample and mathematics component. CONCLUSIONS: Taken together, the results suggest that in more heterogeneous school settings, environments may be more important in driving variation in number line estimation and its association with mathematics, whereas in more homogeneous school settings, genetic effects drive the covariation between number line estimation and mathematics. These results are discussed in the light of development and educational settings.
