Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics.

Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~104 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.

Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins.

On-skin electronics require minimal thicknesses and decent transparency for conformal contact, imperceptible wearing, and visual aesthetics. It is challenging to search for advanced ultrathin dielectrics capable of supporting the active components while maintaining bending softness, easy handling, and wafer-scale processability. Here, self-delaminated aramid nanodielectrics (ANDs) are demonstrated, enabling any skin-like electronics easily exfoliated from the processing substrates after complicated nanofabrication. In addition, ANDs are mechanically strong, chemically and thermally stable, transparent and breathable, therefore are ideal substrates for soft electronics. As demonstrated, compliant epidermal electrodes comprising silver nanowires and ANDs can successfully record high-quality electromyogram signals with low motion artifacts and satisfying sweat and water resistance. Furthermore, ANDs can serve as both substrates and dielectrics in single-walled carbon nanotube field-effect transistors (FETs) with a merely 160-nm thickness, which can be operated within 4 V with on/off ratios of 1.4 ± 0.5 × 105 , mobilities of 39.9 ± 2.2 cm2 V-1 s-1 , and negligible hysteresis. The ultraconformal FETs can function properly when wrapped around human hair without any degradation in performance.

Stretchable and Lithography-Compatible Interconnects Enabled by Self-Assembled Nanofilms with Interlocking Interfaces.

Stretchable interconnects with miniature widths are vital for the high-density integration of deformable electronic components on a single substrate for targeted data logic or storage functions. However, it is still challenging to attain high-resolution patternability of stretchable conductors with robust circuit fabrication capability. Here, we report a self-assembled silver nanofilm firmly interlocked by an elastomeric nanodielectric that can be photolithographically patterned into microscale features while preserving high stretchability and conductivity. Both silver and dielectric nanofilms are fabricated by layer-by-layer assembly, ensuring wafer-scale uniformity and meticulous control of thicknesses. Without any thermal annealing, the as-fabricated nanofilms from silver nanoparticles (AgNPs) exhibit conductivity of 1.54 × 106 S m-1 and stretchability of ∼200%, which is due to the impeded crack propagation by the underlying PU nanodielectrics. Furthermore, it is revealed that AgNP microstrips defined by photolithography show higher stretchability when their widths are downscaled to 100 µm owing to confined cracks. However, further scaling restricts the stretchability, following the early development of cracks cutting across the strip. In addition, the resistance change of these silver interconnects can be decreased using serpentine architectures. As a demonstration, these self-assembled interconnects are used as stretchable circuit boards to power LEDs.

Plastic bending in a semiconducting coordination polymer crystal enabled by delamination.

Coordination polymers (CPs) are a class of crystalline solids that are considered brittle, due to the dominance of directional coordination bonding, which limits their utility in flexible electronics and wearable devices. Hence, engineering plasticity into functional CPs is of great importance. Here, we report plastic bending of a semiconducting CP crystal, Cu-Trz (Trz = 1,2,3-triazolate), that originates from delamination facilitated by the discrete bonding interactions along different crystallographic directions in the lattice. The coexistence of strong coordination bonds and weak supramolecular interactions, together with the unique molecular packing, are the structural features that enable the mechanical flexibility and anisotropic response. The spatially resolved analysis of short-range molecular forces reveals that the strong coordination bonds, and the adaptive C-H···π and Cu···Cu interactions, synergistically lead to the delamination of the local structures and consequently the associated mechanical bending. The proposed delamination mechanism offers a versatile tool for designing the plasticity of CPs and other molecular crystals.

Elastomeric Nanodielectrics for Soft and Hysteresis-Free Electronics.

Elastomeric dielectrics are crucial for reliably governing the carrier densities in semiconducting channels during deformation in soft/stretchable field-effect transistors (FETs). Uncontrolled stacking of polymeric chains renders elastomeric dielectrics poorly insulated at nanoscale thicknesses, thereby thick films are usually required, leading to high voltage or power consumption for on/off operations of FETs. Here, layer-by-layer assembly is exploited to build 15-nm-thick elastomeric nanodielectrics through alternative adsorption of oppositely charged polyurethanes (PUs) for soft and hysteresis-free FETs. After mild thermal annealing to heal pinholes, such PU multilayers offer high areal capacitances of 237 nF cm-2 and low leakage current densities of 3.2 × 10-8 A cm-2 at 2 V. Owing to the intrinsic ductility of the elastomeric PUs, the nanofilms possess excellent dielectric properties at a strain of 5% or a bending radius of 1.5 mm, while the wrinkled counterparts show mechanical stability with negligible changes of leakage currents after repeated stretching to a strain of 50%. Besides, these nanodielectrics are immune to high humidity and conserve their properties when immersed into water, despite their assembly occurs aqueously. Furthermore, the PU dielectrics are implemented in carbon nanotube FETs, demonstrating low-voltage operations (< 1.5 V) and negligible hysteresis without any encapsulations.

High-Resolution Printable and Elastomeric Conductors from Strain-Adaptive Assemblies of Metallic Nanoparticles with Low Aspect Ratios.

Stretchable conductors capable of precise micropatterning are imperative for applications in various wearable technologies. Metallic nanoparticles with low aspect ratios and miniscule sizes are preferred over metallic nanowires or nanoflakes for such applications. However, nanoparticles tend to lose mutual contact during stretching. Therefore, they are rarely used alone in stretchable conductors. In this study, electronic inks comprising silver nanoparticles (AgNPs) for the high-resolution printing of stretchable conductors are reported. AgNPs are synthesized using aqueous polyurethane micelles, which are subsequently disentangled into polymeric chains in isopropanol to stabilize the inks. The ink rheology can be arbitrarily tuned to allow direct-write printing with a minimum feature width of 3 µm. Owing to the absence of extra surfactants, direct drying of such inks at room temperature provides the stretchable conductors with an initial conductivity of 8846 S cm-1 and conductivity of 1305 S cm-1 at 100% strain. This enhanced performance is attributed to the conductive percolations through assemblies of AgNPs adapting to the strain and is equivalent to those of stretchable conductors filled with Ag nanowires or flakes. These inks are promising for the scalable fabrication of highly integrated stretchable electronics.

Self-Limiting Assembly Approaches for Nanoadditive Manufacturing of Electronic Thin Films and Devices.

Most electronics consist of functional thin films with tens of nanometer thicknesses. It is usually challenging to control the growth of these thin films using conventional solution-based approaches. Nanoadditive manufacturing, a method to deposit electronically desired molecules, polymers, or nanomaterials in a layer-by-layer (LbL) fashion, has emerged as a promising technique for the precise control of film growth and device fabrication. Here, basic principles of nanoadditive manufacturing approaches with self-limiting characteristics are summarized with a particular focus on Langmuir-Blodgett assembly and LbL assembly. Additively manufactured electronic thin films with properties of conductors, semiconductors, and dielectrics are reviewed, followed by a discussion of their application in various electronics, such as field-effect transistors, sensors, memory devices, photodetectors, light-emitting diodes, and electrochromic devices. Finally, challenges and future developments of these approaches are proposed. The resulting analysis reveals promising opportunities of nanoadditive manufacturing for the solution-based fabrication of electronic devices.

Metal-Layer Assisted Growth of Ultralong Quasi-2D MOF Nanoarrays on Arbitrary Substrates for Accelerated Oxygen Evolution.

Controlled growth of metal-organic frameworks (MOFs) nanocrystals on requisite surfaces is highly desired for myriad applications related to catalysis, energy, and electronics. Here, this challenge is addressed by overlaying arbitrary surfaces with a thermally evaporated metal layer to enable the well-aligned growth of ultralong quasi-2D MOF nanoarrays comprising cobalt ions and thiophenedicarboxylate acids. This interfacial engineering approach allows preferred chelation of carboxyl groups in the ligands with the metal interlayers, thereby making possible the fabrication and patterning of MOF nanoarrays on substrates of any materials or morphologies. The MOF nanoarrays grown on porous metal scaffolds demonstrate high electrocatalytic capability for water oxidation, exhibiting a small overpotential of 270 mV at 10 mA cm-2 , or 317 mV at 50 mA cm-2 as well as negligible decay of performance within 30 h. The enhanced performance stems from the improved electron and ion transport in the hierarchical porous nanoarrays consisting of in situ formed oxyhydroxide nanosheets in the electrochemical processes. This approach for mediating the growth of MOF nanoarrays can serve as a promising platform for diverse applications.