Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet.

Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5-δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.

Digital inverse patterning solutions for fabrication of high-fidelity microstructures in spatial light modulator (SLM)-based projection lithography.

Digital mask projection lithography (DMPL) technology is gaining significant attention due to its characteristics of free-mask, flexibility, and low cost. However, when dealing with target layouts featuring sizes smaller than the wavelength scale, accurately producing resist patterns that closely match the target layout using conventional methods to design the modulation coefficients of digital masks produced by spatial light modulators (SLM) becomes challenging. Here, we present digital inversion lithography technology (DILT), which offers what we believe to be a novel approach to reverse engineer the modulation coefficients of digital masks. In the case of binary amplitude modulation, DILT achieves a remarkable reduction in pattern errors (PE), reaching the original 0.26. At the same time, in the case of the gray amplitude modulation, the PE can be reduced to the original 0.05, which greatly improves the high-fidelity transfer of the target layout. This significant improvement enhances the accuracy of target design transfer. By leveraging the capabilities of DILT, DMPL can now attain higher precision and reliability, paving the way for more advanced applications in the field of micro-nano device manufacturing.

Correlation versus hybridization gap in CaMn[Formula: see text]Bi[Formula: see text].

We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn[Formula: see text]Bi[Formula: see text], a candidate hybridization-gap semiconductor. By employing a DFT+U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations. Increasing the pressure above [Formula: see text] GPa we find a simultaneous pressure-induced volume collapse, plane-to-chain, insulator to metal transition. Finally, we have also analyzed the topology in the antiferromagnetic CaMn[Formula: see text]Bi[Formula: see text] for all pressures studied.

Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS2.

Defect engineering of van der Waals semiconductors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS2. The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.

Asymmetric magnetic proximity interactions in MoSe2/CrBr3 van der Waals heterostructures.

Magnetic proximity interactions between atomically thin semiconductors and two-dimensional magnets provide a means to manipulate spin and valley degrees of freedom in non-magnetic monolayers, without using applied magnetic fields1-3. In such van der Waals heterostructures, magnetic proximity interactions originate in the nanometre-scale coupling between spin-dependent electronic wavefunctions in the two materials, and typically their overall effect is regarded as an effective magnetic field acting on the semiconductor monolayer4-8. Here we demonstrate that magnetic proximity interactions in van der Waals heterostructures can in fact be markedly asymmetric. Valley-resolved reflection spectroscopy of MoSe2/CrBr3 van der Waals structures reveals strikingly different energy shifts in the K and K' valleys of the MoSe2 due to ferromagnetism in the CrBr3 layer. Density functional calculations indicate that valley-asymmetric magnetic proximity interactions depend sensitively on the spin-dependent hybridization of overlapping bands and as such are likely a general feature of hybrid van der Waals structures. These studies suggest routes to control specific spin and valley states in monolayer semiconductors9,10.

Label-free neural networks-based inverse lithography technology.

Neural network-based inverse lithography technology (NNILT) has been used to improve the computational efficiency of large-scale mask optimization for advanced photolithography. NNILT is now mostly based on labels, and its performance is affected by the quality of labels. It is difficult for NNILT to achieve high performance and extrapolation ability for mask optimization without using labels. Here, we propose a label-free NNILT (LF-NNILT), which is implemented completely without labels and greatly improves the printability of the target layouts and the manufacturability of the synthesized masks compared to the traditional ILT. More importantly, the optimization speed of LF-NNILT is two orders of magnitude faster than the traditional ILT. Furthermore, LF-NNILT is simpler to implement and can achieve better solvers to support the development of advanced lithography.

Recyclable Graphene Sheets as a Growth Template for Crystalline ZnO Nanowires.

Recent advances in nanoscience have opened ways of recycling substrates for nanomaterial growth. Novel materials, such as atomically thin materials, are highly desirable for the recycling substrates. In this work, we report recycling of monolayer graphene as a growth template for synthesis of single crystalline ZnO nanowires. Selective nucleation of ZnO nanowires on graphene was elucidated by scanning electron microscopy and density functional theory calculation. Growth and subsequent separation of ZnO nanowires was repeated up to seven times on the same monolayer graphene film. Raman analyses were also performed to investigate the quality of graphene structure along the recycling processes. The chemical robustness of graphene enables the repetitive ZnO nanowire growth without noticeable degradation of the graphene quality. This work presents a route for graphene as a multifunctional growth template for diverse nanomaterials such as nanocrystals, aligned nanowires, other two-dimensional materials, and semiconductor thin films.

Incommensurate Spin Fluctuations in the Spin-Triplet Superconductor Candidate UTe_{2}.

Spin-triplet superconductors are of extensive current interest because they can host topological state and Majorana fermions important for quantum computation. The uranium-based heavy-fermion superconductor UTe_{2} has been argued as a spin-triplet superconductor similar to UGe_{2}, URhGe, and UCoGe, where the superconducting phase is near (or coexists with) a ferromagnetic (FM) instability and spin-triplet electron pairing is driven by FM spin fluctuations. Here we use neutron scattering to show that, although UTe_{2} exhibits no static magnetic order down to 0.3 K, its magnetism in the [0,K,L] plane is dominated by incommensurate spin fluctuations near an antiferromagnetic ordering wave vector and extends to at least 2.6 meV. We are able to understand the dominant incommensurate spin fluctuations of UTe_{2} in terms of its electronic structure calculated using a combined density-functional and dynamic mean-field theory.

Observation of Dirac state in half-Heusler material YPtBi.

The prediction of non-trivial topological electronic states in half-Heusler compounds makes these materials good candidates for discovering new physics and devices as half-Heusler phases harbour a variety of electronic ground states, including superconductivity, antiferromagnetism, and heavy-fermion behaviour. Here, we report a systematic studies of electronic properties of a superconducting half-Heusler compound YPtBi, in its normal state, investigated using angle-resolved photoemission spectroscopy. Our data reveal the presence of a Dirac state at the [Formula: see text] point of the Brillouin zone at 500 meV below the Fermi level. We observe the presence of multiple Fermi surface pockets, including two concentric hexagonal and six half-oval shaped pockets at the [Formula: see text] and K points of the Brillouin zone, respectively. Furthermore, our measurements show Rashba-split bands and multiple surface states crossing the Fermi level, this is also supported by the first-principles calculations. Our findings of a Dirac state in YPtBi contribute to the establishing of half-Heusler compounds as a potential platform for novel topological phases.

From Trivial Kondo Insulator Ce_{3}Pt_{3}Bi_{4} to Topological Nodal-Line Semimetal Ce_{3}Pd_{3}Bi_{4}.

Using the density functional theory combined with dynamical mean-field theory, we have performed systematic study of the electronic structure and its band topology properties of Ce_{3}Pt_{3}Bi_{4} and Ce_{3}Pd_{3}Bi_{4}. At high temperatures (∼290 K), the electronic structures of both compounds resemble the open-core 4f density functional calculation results. For Ce_{3}Pt_{3}Bi_{4}, clear hybridization gap can be observed below 72 K, and its coherent momentum-resolved spectral function below 18 K exhibits an topologically trivial indirect gap of ∼6 meV and resembles density functional band structure with itinerant 4f state. For Ce_{3}Pd_{3}Bi_{4}, no clear hybridization gap can be observed down to 4 K, and its momentum-resolved spectral function resembles electron-doped open-core 4f density functional calculations. The band nodal points of Ce_{3}Pd_{3}Bi_{4} at 4 K are protected by the gliding-mirror symmetry and form ringlike structure. Therefore, the Ce_{3}Pt_{3}Bi_{4} compound is topologically trivial Kondo insulator while the Ce_{3}Pd_{3}Bi_{4} compound is topological nodal-line semimetal.

Exploring itinerant states in divalent hexaborides using rare-earth L edge resonant inelastic x-ray scattering.

We present a study of resonant inelastic x-ray scattering (RIXS) spectra collected at the rare-earth L edges of divalent hexaborides YbB6 and EuB6. In both systems, RIXS-active features are observed at two distinct resonances separated by [Formula: see text] eV in incident energy, with angle-dependence suggestive of distinct photon scattering processes. RIXS spectra collected at the divalent absorption peak resemble the unoccupied 5d density of states calculated using density functional theory. We discuss possible origins of this correspondence including a scenario which changes the 4f  valence. In addition, anomalous resonant scattering is observed at higher incident energy, where no corresponding absorption feature is present. Our results demonstrate the potential for L-edge RIXS to assess the itinerant-state properties of f -electron materials.

MicroRNA-9 inhibits gastric cancer cell proliferation and migration by targeting neuropilin-1.

Gastric cancer (GC) is a global health problem with poor clinical outcomes. The mechanism of its development and progression remains largely unclear. The present study investigated the role of microRNA-9 (miR-9-5p) in the development and progression of GC. Overexpression of miR-9-5p led to reduced expression of neuropilin-1 (NRP-1) in GC cells. Dual-luciferase reporter assay results indicated that miR-9-5p directly targeted NRP-1. Furthermore, overexpression of miR-9-5p in GC cells increased the expression of mesenchymal markers, N-cadherin and vimentin, and decreased the expression of epithelial markers, E-cadherin and ß-catenin. Overexpression of miR-9-5p inhibited GC cell proliferation, migration and invasion, and increased the sensitivity of GC cells to the anti-cancer drug cisplatin. By contrast, the opposite effects were observed in GC cells following downregulation of miR-9-5p. Taken together, the present findings suggested that miR-9-5p suppressed NRP-1 expression and inhibited GC cell proliferation and invasion. In addition, miR-9-5p overexpression attenuated GC cell resistance to anti-cancer drugs, which highlighted the potential of miR-9-5p as a target for the treatment of GC.

Monitoring Electron-Phonon Interactions in Lead Halide Perovskites Using Time-Resolved THz Spectroscopy.

Lead halide perovskite semiconductors have low-frequency phonon modes within the lead halide sublattice and thus are considered to be soft. The soft lattice is considered to be important in defining their interesting optoelectronic properties. Electron-phonon coupling governs hot-carrier relaxation, carrier mobilities, carrier lifetimes, among other important electronic characteristics. Directly observing the interplay between free charge carriers and phonons can provide details on how phonons impact these properties (e.g., exciton populations and other collective modes). Here, we observe a delicate interplay among carriers, phonons, and excitons in mixed-cation and mixed-halide perovskite films by simultaneously resolving the contribution of charge carriers and phonons in time-resolved terahertz photoconductivity spectra. We are able to observe directly the increase in phonon population during carrier cooling and discuss how thermal equilibrium populations of carriers and phonons modulate the carrier transport properties, as well as reduce the population of carriers within band tails. We are also able to observe directly the formation of free charge carriers when excitons interact with phonons and dissociate and to describe how free carriers and exciton populations exchange through phonon interactions. Finally, we also time-resolve how the carriers are screened via the Coulomb interaction at low and room temperatures. Our studies shed light on how charge carriers interact with the low-energy phonons and discuss implications.

Ultrafast X-Ray Absorption Spectroscopy of Strongly Correlated Systems: Core Hole Effect.

In recent years, ultrafast pump-probe spectroscopy has provided insightful information about the nonequilibrium dynamics of excitations in materials. In a typical experiment of time-resolved x-ray absorption spectroscopy, the systems are excited by a femtosecond laser pulse (pump pulse) followed by an x-ray probe pulse after a time delay to measure the absorption spectra of the photoexcited systems. We present a theory for nonequilibrium x-ray absorption spectroscopy in one-dimensional strongly correlated systems. The core hole created by the x ray is modeled as an additional effective potential of the core hole site, which changes the spectrum qualitatively. In equilibrium, the spectrum reveals the charge gap at half-filling and the metal-insulator transition in the presence of the core hole effect. Furthermore, a pump-probe scheme is introduced to drive the system out of equilibrium before the x-ray probe. The effects of the pump pulse with varying frequencies, shapes, and fluences are discussed for the dynamics of strongly correlated systems in and out of resonance. The spectrum indicates that the driven insulating state has a metallic droplet around the core hole. The rich structures of the nonequilibrium x-ray absorption spectrum give more insight into the dynamics of electronic structures.

Kondo Signatures of a Quantum Magnetic Impurity in Topological Superconductors.

We study the Kondo physics of a quantum magnetic impurity in two-dimensional topological superconductors (TSCs), either intrinsic or induced on the surface of a bulk topological insulator, using a numerical renormalization group technique. We show that, despite sharing the p+ip pairing symmetry, intrinsic and extrinsic TSCs host different physical processes that produce distinct Kondo signatures. Extrinsic TSCs harbor an unusual screening mechanism involving both electron and orbital degrees of freedom that produces rich and prominent Kondo phenomena, especially an intriguing pseudospin Kondo singlet state in the superconducting gap and a spatially anisotropic spin correlation. In sharp contrast, intrinsic TSCs support a robust impurity spin doublet ground state and an isotropic spin correlation. These findings advance fundamental knowledge of novel Kondo phenomena in TSCs and suggest experimental avenues for their detection and distinction.

Optical absorption spectroscopy in hybrid systems of plasmons and excitons.

Understanding the physics of light emitters in quantum nanostructures regarding scalability, geometry, structure of the system and coupling between different degrees of freedom is important as one can improve the design and further provide rigorous controls of quantum devices. The coupling between these degrees of freedom, in general, depends on the external field, the geometry of nano particles, and the experimental design. An effective model is proposed to describe the plasmon-exciton hybrid systems and its optical absorption spectra, which is studied in detail by exact diagonalization. Two different designs are discussed: a nano particle planet surrounded by quantum dot satellites and a quantum dot planet surrounded by nano particle satellites. In both setups, details of many quantum dots and nano particles are studied, and the spectra are discussed in detail regarding the energy of transition peaks and the weight distribution of allowed transition peaks. Also, different polarization of external fields is considered, which results in anisotropic couplings, and the absorption spectra clearly reveal the difference qualitatively. Finally, the system will undergo a phase transition in the presence of attractive interactions between excitons. Our work sheds light on the design of nano scale quantum systems to achieve photon emitter/resonator theory in plasmon-exciton hybrid systems.

Electronic and Magnetic Properties of Lanthanum and Strontium Doped Bismuth Ferrite: A First-Principles Study.

While bismuth ferrite BiFeO3 (BFO) is a well studied multiferroic material, its electronic and magnetic properties in the presence of A-site dopants have not been explored widely. Here we report the results of a systematic study of the local electronic structure, spontaneous polarization, and magnetic properties of lanthanum (La) and strontium (Sr) doped rhombohedral bismuth ferrite within density functional theory. An enhanced ferroelectric polarization of 122.43 µC/cm2 is predicted in the uniformly doped BiLaFe2O6. We find that substitution of Sr in the A-site drives the system into a metallic state. The nature of magnetism arises mainly from the B-site Fe exhibiting a G-type antiferromagnetic ordering. Our study finds that upon dopant substitution, the local magnetic moment is decreased and its magnitude is dependent on the distance between the Fe and the dopant atom. The correlation between the local moment and the distance between the Fe and the dopant atom is discussed.