Switched CMOS current source compared to enhanced Howland circuit for bio-impedance applications.

Bio-impedance Spectroscopy (BIS) is a technique that allows tissue analysis to diagnose a variety of diseases, such as medical imaging, cancer diagnosis, muscle fatigue detection, glucose measurement, and others under research. The development of CMOS integrated circuit front-ends for bioimpedance analysis is required by the increasing use of wearable devices in the healthcare field, as they offer key features for battery-powered wearable devices. These features include high miniaturization, low power consumption, and low voltage power supply. A key circuit in BIS systems is the current source, and one of the most common topology is the Enhanced Howland Current Source (EHCS). EHCS is also used when the current driver is driven by a pseudo-random signal like discrete interval binary sequences (DIBS), which, due to its broadband nature, requires high performance operational amplifiers. These facts lead to the need for a current source more compatible with DIBS signals, ultra-low power supply, standard CMOS integrated circuit, output current amplitude independent of input voltage amplitude, high output impedance, high load capability, high output voltage swing, and the possibility of tetra-polar BIS analysis, that is a pseudotetra-polar in the case of EHCS. The objective of this work is to evaluate the performance of the Switching CMOS Current Source (SCMOSCS) over EHCS using a Cole-skin model as a load using SPICE simulations (DC and AC sweeps and transient analysis). The SCMOSCS demonstrated an output impedance of more than 20 MΩ, a ± 2.5 V output voltage swing from a +3.3 V supply, a 275 µA current consumption, and a 10 kΩ load capacity. These results contrast with the + 1.5 V output voltage swing, the 3 kΩ load capacity, and the 4.9 mA current of the EHCS case.

Current Mirror Improved Potentiostat (CMIPot) for a Three Electrode Electrochemical Cell.

This work presents a novel compact CMOS potentiostat-designed circuit for an electrochemical cell. The proposed topology functions as a circuit interface, controlling the polarization of voltage signals at the sensor electrodes and facilitating current measurement during the oxidation-reduction process of an analyzed solution. The potentiostat, designed for CMOS technology, comprises a two-stage amplifier, two current mirror blocks coupled to this amplifier, and a CMOS push-pull output stage. The electrochemical method of cyclic voltammetry is employed, operating within a voltage range of ±0.8 V and scan rates of 10 mV/s, 25 mV/s, 100 mV/s, and 250 mV/s. The circuit is capable of reading currents ranging from 10 µA to 500 µA. Experimental results were obtained using a potassium ferrocyanide K3[Fe(CN)6] redox solution with concentrations of 10, 15, and 20 mmol/L, and their corresponding voltammograms were evaluated. The experimental results from a discrete circuit demonstrate that the proposed potentiostat topology produces outcomes consistent with those of classical topologies presented in the literature and industrial equipment.

Exploring the Efficacy of Nonlinear Filters in CMOS for 2-D Signal Processing for Image Quality Enhancement.

This study rigorously investigates the effectiveness of nonlinear filters in CMOS for 2-D signal processing to enhance image quality. We comprehensively compare traditional linear filters' performance, which operate on the principle of linearity, with nonlinear filters, such as the median-median (Med-Med) approach, designed to handle nonlinear data. To ensure the validity of our findings, we use widely accepted metrics like normalized squared error (NSE), peak signal-to-noise ratio (PSNR), and structural similarity index (SSIM) to quantify the differences. Our simulations and experiments, conducted under controlled conditions, demonstrate that nonlinear filters in CMOS outperform linear filters in removing impulse noise and enhancing images. We also address the challenges of implementing these algorithms at the hardware level, focusing on power consumption and chip area optimization. Additionally, we propose a new architecture for the Med-Med filter and validate its functionality through experiments using a 9-pixel image sensor array. Our findings highlight the potential of nonlinear filters in CMOS for real-time image quality enhancement and their applicability in various real-world imaging applications. This research contributes to visual technology by combining theoretical insights with practical implementations, paving the way for more efficient and adaptable imaging systems.

High-resolution X-Ray imaging of small animal samples based on Commercial-Off-The-Shelf CMOS image sensors.

 An automated system for acquiring microscopic-resolution radiographic images of biological samples was developed. Mass-produced, low-cost, and easily automated components were used, such as Commercial-Off-The-Self CMOS image sensors (CIS), stepper motors, and control boards based on Arduino and RaspberryPi. System configuration, imaging protocols, and Image processing (filtering and stitching) were defined to obtain high-resolution images and for successful computational image reconstruction. Radiographic images were obtained for animal samples including the widely used animal models zebrafish (Danio rerio) and the fruit-fly (Drosophila melanogaster), as well as other small animal samples. The use of phosphotungstic acid (PTA) as a contrast agent was also studied. Radiographic images with resolutions of up to (7±0.6)µm were obtained, making this system comparable to commercial ones. This work constitutes a starting point for the development of more complex systems such as X-ray attenuation micro-tomography systems based on low-cost off-the-shelf technology. It will also bring the possibility to expand the studies that can be carried out with small animal models at many institutions (mostly those working on tight budgets), particularly those on the effects of ionizing radiation and absorption of heavy metal contaminants in animal tissues.

Functionalization of a Fully Integrated Electrophotonic Silicon Circuit for Biotin Sensing.

Electrophotonic (EPh) circuits are novel systems where photons and electrons can be controlled simultaneously in the same integrated circuit, attaining the development of innovative sensors for different applications. In this work, we present a complementary metal-oxide-semiconductor (CMOS)-compatible EPh circuit for biotin sensing, in which a silicon-based light source is monolithically integrated. The device is composed of an integrated light source, a waveguide, and a p-n photodiode, which are all fabricated in the same chip. The functionalization of the waveguide's surface was investigated to biotinylate the EPh system for potential biosensing applications. The modified surfaces were characterized by AFM, optical microscopy, and Raman spectroscopy, as well as by photoluminescence measurements. The changes on the waveguide's surface due to functionalization and biotinylation translated into different photocurrent intensities detected in the photodiode, demonstrating the potential uses of the EPh circuit as a biosensor.

Excel Methods to Design and Validate in Microelectronics (Complementary Metal-Oxide-Semiconductor, CMOS) for Biomedical Instrumentation Application.

CMOS microelectronics design has evolved tremendously during the last two decades. The evolution of CMOS devices to short channel designs where the feature size is below 1000 nm brings a great deal of uncertainty in the way the microelectronics design cycle is completed. After the conceptual idea, developing a thinking model to understand the operation of the device requires a good "ballpark" evaluation of transistor sizes, decision making, and assumptions to fulfill the specifications. This design process has iterations to meet specifications that exceed in number of the available degrees of freedom to maneuver the design. Once the thinking model is developed, the simulation validation follows to test if the design has a good possibility of delivering a successful prototype. If the simulation provides a good match between specifications and results, then the layout is developed. This paper shows a useful open science strategy, using the Excel software, to develop CMOS microelectronics hand calculations to verify a design, before performing the computer simulation and layout of CMOS analog integrated circuits. The full methodology is described to develop designs of passive components, as well as CMOS amplifiers. The methods are used in teaching CMOS microelectronics to students of electronic engineering with industrial partner participation. This paper describes an exhaustive example of a low-voltage operational transconductance amplifier (OTA) design which is used to design an instrumentation amplifier. Finally, a test is performed using this instrumentation amplifier to implement a front-end signal conditioning device for CMOS-MEMS biomedical applications.

CMOS Implementation of ANNs Based on Analog Optimization of N-Dimensional Objective Functions.

The design of neural network architectures is carried out using methods that optimize a particular objective function, in which a point that minimizes the function is sought. In reported works, they only focused on software simulations or commercial complementary metal-oxide-semiconductor (CMOS), neither of which guarantees the quality of the solution. In this work, we designed a hardware architecture using individual neurons as building blocks based on the optimization of n-dimensional objective functions, such as obtaining the bias and synaptic weight parameters of an artificial neural network (ANN) model using the gradient descent method. The ANN-based architecture has a 5-3-1 configuration and is implemented on a 1.2 µm technology integrated circuit, with a total power consumption of 46.08 mW, using nine neurons and 36 CMOS operational amplifiers (op-amps). We show the results obtained from the application of integrated circuits for ANNs simulated in PSpice applied to the classification of digital data, demonstrating that the optimization method successfully obtains the synaptic weights and bias values generated by the learning algorithm (Steepest-Descent), for the design of the neural architecture.

A Gadolinium Metal-Organic Framework Film as a Converter Layer for Neutron Detection.

Metal-organic frameworks (MOFs) are known for their versatility in terms of their crystalline structure, porosity, resistance to temperature, radiation damage, and luminescence among others. Gadolinium (Gd) is one of the elements with the highest reported cross-section for low energy neutron capture, producing internal conversion electrons and γ rays as a result of the neutron absorption. The development of Gd-BTC films (BTC=1,3,5-benzenetricarboxylate) is shown that were deposited on Si and Al substrates by airbrushing, and characterized by profilometry, Raman, EDX and X-ray diffraction. Radiation damage, thermal decomposition and neutron absorption of these films were studied as well. Gd-BTC films were attached to CMOS devices (Complementary Metal-Oxide-Semiconductor), which are sensible to the internal conversion electrons, in order to build a neutron detector. The devices Gd-BTC/CMOS could selectively detect neutrons in the presence of γ rays with a thermal neutron detection efficiency of 3.3±0.1 %, a signal to noise ratio of 6 : 1, and were suitable to obtain images.

Dosimetry and Calorimetry Performance of a Scientific CMOS Camera for Environmental Monitoring.

This paper explores the prospect of CMOS devices to assay lead in drinking water, using calorimetry. Lead occurs together with traces of radioisotopes, e.g., 210Pb, producing g-emissions with energies ranging from 10 keV to several 100 keV when they decay; this range is detectable in silicon sensors. In this paper we test a CMOS camera (OXFORD INSTRUMENTS Neo 5.5) for its general performance as a detector of X-rays and low energy g-rays and assess its sensitivity relative to the World Health Organization upper limit on lead in drinking water. Energies from 6 keV to 60 keV are examined. The CMOS camera has a linear energy response over this range and its energy resolution is for the most part slightly better than 2%. The Neo sCMOS is not sensitive to X-rays with energies below ~10 keV. The smallest detectable rate is 40 ± 3 mHz, corresponding to an incident activity on the chip of 7 ± 4 Bq. The estimation of the incident activity sensitivity from the detected activity relies on geometric acceptance and the measured efficiency vs. energy. We report the efficiency measurement, which is 0.08(2)% (0.0011(2)%) at 26.3 keV (59.5 keV). Taking calorimetric information into account we measure a minimal detectable rate of 4 ± 1 mHz (1.5 ± 0.1 mHz) for 26.3 keV (59.5 keV) g-rays, which corresponds to an incident activity of 1.0 ± 0.6 Bq (57 ± 33 Bq). Toy Monte Carlo and Geant4 simulations agree with these results. These results show this CMOS sensor is well-suited as a g- and X-ray detector with sensitivity at the few to 100 ppb level for 210Pb in a sample.

Current-Mode Self-Amplified CMOS Sensor Intended for 2D Temperature Microgradients Measurement and Imaging.

This paper presents the design of a current-mode CMOS self-amplified imager operating in dark conditions, for thermal imaging, which provides an innovative solution for precision thermal contact mapping. Possible applications of this imager range from 3D CMOS integrated circuits to the study of in-vivo biological samples. It can provide a thermal map, static or dynamic, for the measurement of temperature microgradients. Some adaptations are required for the optimization of this self-amplified image sensor since it responds exclusively to the dark currents of the photodiodes throughout the array. The sensor is designed in a standard CMOS process and requires no post-processing steps. The optimized image sensor operates with integration times as low as one µs and can achieve both SNR and dynamic range compatible to those of sensors available on the market, estimated as 87dB and 75dB, respectively; noise equivalent temperature difference can be as low as 10mK; and detection errors as low as ±1%. Furthermore, under optimal conditions the self-amplification process enables a simple form of CDS, enhancing the overall sensor noise performance.

Angular Light, Polarization and Stokes Parameters Information in a Hybrid Image Sensor with Division of Focal Plane.

Targeting 3D image reconstruction and depth sensing, a desirable feature for complementary metal oxide semiconductor (CMOS) image sensors is the ability to detect local light incident angle and the light polarization. In the last years, advances in the CMOS technologies have enabled dedicated circuits to determine these parameters in an image sensor. However, due to the great number of pixels required in a cluster to enable such functionality, implementing such features in regular CMOS imagers is still not viable. The current state-of-the-art solutions require eight pixels in a cluster to detect local light intensity, incident angle and polarization. The technique to detect local incident angle is widely exploited in the literature, and the authors have shown in previous works that it is possible to perform the job with a cluster of only four pixels. In this work, the authors explore three novelties: a mean to determine three of four Stokes parameters, the new paradigm in polarization cluster-pixel design, and the extended ability to detect both the local light angle and intensity. The features of the proposed pixel cluster are demonstrated through simulation program with integrated circuit emphasis (SPICE) of the regular Quadrature Pixel Cluster and Polarization Pixel Cluster models, the results of which are compliant with experimental results presented in the literature.

Effects of epidermal growth factor and progesterone on development, ultrastructure and gene expression of bovine secondary follicles cultured in vitro.

The aims of this study were to investigate the effects of epidermal growth factor (EGF) and progesterone on the development, viability and the gene expression of bovine secondary follicle culture in vitro for 18 days. Secondary follicles (∼0.2 mm) were isolated from ovarian cortex and individually cultured at 38.5 °C, with 5% CO2 in air, for 18 days, in TCM-199+ (n = 63) alone (control medium) or supplemented with 10 ng/mL progesterone (n = 64), 10 ng/mL EGF (n = 61) or both EGF and progesterone (n = 66). The effects of these treatments on growth, antrum formation, viability, ultrastructure and mRNA levels for GDF-9, c-MOS, H1foo and cyclin B1 were evaluated, significantly different (p < 0.05). The results showed that there was a progressive increase in follicular diameter in all treatments, but only follicles cultured in medium supplemented with EGF had increased significantly in diameter when compared to follicles cultured in the control medium at the end of the culture period, significantly different (p < 0.05). A positive interaction between EGF and progesterone was not observed. In addition, the presence of EGF, progesterone or both in culture medium did not influence the rate of follicle survival and antrum formation. However, the presence of only progesterone in cultured medium increased the expression of mRNAs for GDF9 and cyclin B1 in oocytes. EGF also significantly increased the levels of mRNAs for cMOS and GDF9 when compared to follicles cultured in control medium. Ultrastructural analyzes showed that cultured follicles in all treatments maintained the integrity of granulosa cells. In conclusion, the EGF promotes the development of secondary follicles cultured in vitro for 18 days and increases the expression of cMOS and GDF9, while progesterone alone or in association with EGF have not a positive effect on follicular growth. However, progesterone increases the expression of GDF9 and cyclin B1 in oocytes.

High-Level Modeling and Simulation Tool for Sensor Conditioning Circuit Based on Artificial Neural Networks.

For current microelectronic integrated systems, the design methodology involves different steps that end up in the full system simulation by means of electrical and physical models prior to its manufacture. However, the higher the circuit complexity, the more time is required to complete these simulations, jeopardizing the convergence of the numerical methods and, hence, meaning that the reliability of the results are not guaranteed. This paper shows the use of a high-level tool based on Matlab to simulate the operation of an artificial neural network implemented in a mixed analog-digital CMOS process, intended for sensor calibration purposes. The proposed standard tool enables modification of the neural model architecture to adapt its characteristics to those of the electronic system, resulting in accurate behavioral models that predict the complete microelectronic IC system behavior under different operation conditions before its physical implementation with a simple, time-efficient, and reliable solution.

Impact of CMOS Pixel and Electronic Circuitry in the Performance of a Hartmann-Shack Wavefront Sensor.

This work presents a numerical simulation of a Hartmann-Shack wavefront sensor (WFS) that assesses the impact of integrated electronic circuitry on the sensor performance, by evaluating a full detection chain encompassing wavefront sampling, photodetection, electronic circuitry and wavefront reconstruction. This platform links dedicated C algorithms for WFS to a SPICE circuit simulator for integrated electronics. The complete codes can be easily replaced in order to represent different detection or reconstruction methods, while the circuit simulator employs reliable models of either off-the-shelf circuit components or custom integrated circuit modules. The most relevant role of this platform is to enable the evaluation of the applicability and constraints of the focal plane of a given wavefront sensor prior to the actual fabrication of the detector chip. In this paper, we will present the simulation results for a Hartmann-Shack wavefront sensor with an orthogonal array of quad-cells (QC) integrated along with active-pixel (active-pixel sensor (APS)) circuitry and analog-to-digital converters (ADC) on a "complementary metal oxide semiconductor" (CMOS) process and deploying a modal wavefront reconstructor. This extended simulation capability for wavefront sensors enables the test and verification of different photosensitive and circuitry topologies for position-sensitive detectors combined with the simulation of sampling microlenses and reconstruction algorithms, with the goal of enhancing the accuracy in the prediction of the wavefront-sensor performance before a detector CMOS chip is actually fabricated.

An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor.

In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 µV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame.

Alternative post-processing on a CMOS chip to fabricate a planar microelectrode array.

We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 µm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+ -type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications.

Carbon nanotube integration with a CMOS process.

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 µm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.