Concentration-Switchable Assembly of Carbon Dots for Circularly Polarized Luminescent Amplification in Chiral Logic Gates and Deep-Red Light-Emitting Diodes.

Stimuli-responsive circularly polarized luminescent (CPL) materials are expected to find widespread application in advanced information technologies, such as 3D displays, multilevel encryption, and chiral optical devices. Here, using R-/S-α-phenylethylamine and 3,4,9,10-perylenetetracarboxylic dianhydride as precursors, chiral carbon dots (Ch-CDs) exhibiting bright concentration-dependent luminescence are synthesized, demonstrating reversible responses in both their morphologies and emission spectra. By adjusting Ch-CD concentration, the switchable wavelength is extended over 180 nm (539-720 nm), with the maximum quantum efficiency reaching 100%. Meanwhile, upon increasing Ch-CD concentration, the emission wavelength red-shifts, while the chirality of the assembled nanoribbons is synchronously amplified, ultimately achieving CPL at 709 nm and a maximum luminescence asymmetry factor of 2.18 × 10-2. These values represent the longest wavelength and the largest glum reported for CDs. Considering the remarkable optical properties of the synthesized Ch-CDs, multilevel chiral logic gates are designed, and their potential practical applications are demonstrated in multilevel anti-counterfeiting encryption, flexible electronic printing, and solid-state CPL. Furthermore, deep-red chiral electroluminescence light-emitting diodes (EL-LEDs) are prepared using these Ch-CDs, achieving an external quantum efficiency of 1.98%, which is the highest value reported to date for CDs in deep-red EL-LEDs, and the first report of chiral electronic devices based on CDs.

Clar's Aromatic π-Sextet Rule for the Construction of Red Multiple Resonance Emitter.

Despite the proliferation of multiple resonance (MR) materials in the blue to green spectral ranges, red MR emitters remain scarce in the literature, an area that certainly warrants attention for future applications. Here, through a clever application of classic Clar's aromatic π-sextet rule, we triumphantly constructed the first red MR emitter by substituting the conventional benzene ring core with anthracene (fewer π-sextets). Theoretical studies indicate that the quantity of π-sextets ultimately determines the optical bandgap of a molecule, rather than the number of fused benzene rings. Benefiting from the high photoluminescence quantum yield of ~94% and horizontal dipole ratio of ~90%, the corresponding narrowband red (luminescence wavelength: 608 nm) organic light-emitting diode shows a high external quantum efficiency of 27.3%, with only a slight decrease of 3.7% at an elevated luminance level of 100,000 cd/m2.

Hybrid Local and Charge Transfer Emitters Utilizing Hyperconjugation Effect Towards Solution-Processed Ultra-Deep-Blue OLEDs with External Quantum Efficiency Approaching 12.

Hybrid local and charge transfer (HLCT) excited state materials, which possess weak donor-acceptor (D-A) pure organic structures, deserve one of the most promising efficient and stable blue emitters. Through high-lying reverse intersystem crossing (hRISC) process, 75% triplet excitons generated by electrical excitation could be harvested and utilized in organic light-emitting diodes (OLEDs). However, there are still significant challenges to achieve high-efficiency ultra-deep-blue HLCT emitters with low Commission Internationale de l'Eclairage (CIE) 1931 chromaticity coordinate y values. Here, a series of novel blue HLCT emitters based on spiro[1,8-diazafluorene-9,2'-imidazole] structure were designed and synthesized by fine-tuning the spiro[fluorene-9,2'-imidazole] core structure in our previous work through heteroatom substitution and hyperconjugation effect. The target emitters were endowed with excellent photophysical and electrochemical merits, thermal stability and solution processibility. The solution-processed OLED device based on 4',5'-bis(4-(9H-carbazol-9-yl)phenyl)spiro[1,8-diazafluorene-9,2'-imidazole] (NFIP-CZ) achieved efficient ultra-deep-blue emission (CIEx,y = 0.1581, 0.0422) with the maximum external quantum efficiency (EQEmax), maximum current efficiency (CEmax) and maximum power efficiency (PEmax) of 11.94%, 4.07 cd·A-1 and 2.56 lm·W-1. The record EQE is a breakthrough in both solution-processed and vacuum vapor deposition ultra-deep-blue HLCT-OLEDs currently.

Multiple Resonance Quasi-fluorescence from BN-Doped Aromatic Compounds Modified with "Naphthalene" Units Approaches the BT.2020 Green Light Standard.

Creating fluorophores that meet the Broadcast Service Television 2020 (BT.2020) standard is a significant achievement. In this paper, we present an innovative strategy that could revolutionize the development of high-performance narrowband fluorophores for ultra-high-definition displays. Our approach combines classic multi-resonance BN-doped fragments with naphthalene, creating two novel narrowband bright green quasi-fluorescent emitters, NT-2B and NT-3B. When tested in dilute toluene, these molecules exhibit emission peaks at 510 and 511 nm with extremely narrow FWHM values of 15 and 14 nm, respectively. Both molecules also demonstrate conventional fluorescence properties with high photoluminescence quantum yields (PLQYs) of up to 85%. Notably, OLEDs containing NT-2B achieve a peak EQE of approximately 30% and at a doping concentration of 5 wt.%, OLEDs based on NT-2B achieve a CIEy value of roughly 0.75, closely matching the BT.2020 standard.

Spatial Control of Nickel Vacancies in Colloidal NiMgO Nanocrystals for Efficient and Stable All-inorganic Quantum Dot Light-Emitting Diodes.

Colloidal quantum dot (QD)-based light-emitting diodes (QD-LEDs) have reached the pinnacle of quantum efficiency and are now being actively developed for next-generation displays and brighter light sources. Previous research has suggested utilizing inorganic hole-transport layers (HTLs) to explore brighter and more stable QD-LEDs. However, the performance metrics of such QD-LEDs with inorganic HTLs generally lag behind those of organic-inorganic hybrid QD-LEDs employing organic HTLs. In this study, colloidal NiMgO nanocrystals (NCs) with spatially controlled Mg are introduced as HTLs for realizing efficient and stable all-inorganic QD-LEDs. During the co-condensation of Ni and Mg precursors to produce valence band-lowered NiMgO NCs, incorporating ≈2% Mg into the NiO lattice creates additional Ni vacancies (VNi) within and on the NCs, influencing the hole concentration and mobility of the NiMgO NC films. Passivating the VNi exposed on the surface with magnesium hydroxide allows for tuning the electrical properties of the NiMgO NCs relative to those of an electron transport layer, allowing for a balanced charge supply and suppressed negative charging of the QDs. Optimized all-inorganic QD-LEDs employing NiMgO NCs achieved a peak external quantum efficiency of 16.4%, peak luminance of 269 455 cd m⁻2, and a half-life of 462 690 h at 100 nit.

Ions-induced Assembly of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30.

Metal halide perovskites, a cost-effective class of semiconductos, hold great promise for display technologies that demand high-efficiency, color-pure light-emitting diodes (LEDs). Early research on three-dimensional (3D) perovskites showed low radiative efficiencies due to modest exciton binding energies. To inprove luminescence, reducing dimensionality or grain size has been a common approach. However, dividing the perovskite lattice into smaller units may hinder carrier transport, compromising electrical performance. Moreover, the increased surface area introduce additional surface trap states, leading to greater non-radiative recombination. Here, an ions-induced growth method is employed to assembe lattice-anchored perovskite nanocomposites for efficient LEDs with high color purity. This approach enables the nanocomposite thin films, composed of 3D CsPbBr3 and its variant of zero-dimensional (0D) Cs4PbBr6, to feature significant low trap-assisted nonradiative recombination, enhanced light out-coupling with a corrugated surface, and well-balanced charge carrier transport. Based on the resultant 3D/0D perovskite nanocomposites, the perovskite LEDs (PeLEDs) achieving an remarkable external quantum efficiency of 31.0% at the emission peak of 521 nm with a narrow full width at half-maximum of only 18 nm. This sets a new benchmark for color purity in high performance PeLED research, highlighting the significant advantage of this approach.

Robust and orange-yellow-emitting Sr-rich polytypoid α-SiAlON (Sr3Si24Al6N40:Eu2+) phosphor for white LEDs.

Nitrides and oxynitrides isostructural to α-Si3N4 (M-α-SiAlON, M = Sr, Ca, Li) possess superb thermally stable photoluminescence (PL) properties, making them reliable phosphors for high-power solid-state lighting. However, the synthesis of phase-pure Sr-α-SiAlON still remains a great challenge and has only been reported for Sr below 1.35 at.% as the large size of Sr2+ ions tends to destabilize the α-SiAlON structure. Here, we succeeded to synthesize the single-phase powders of a unique 'Sr-rich' polytypoid α-SiAlON (Sr3Si24Al6N40:Eu2+) phosphor with three distinctive Sr/Eu luminescence sites using a solid-state remixing-reannealing process. The Sr content of this polytypoid structure exceeds those of a few previously reported structures by over 200%. The phase purity, composition, structure, and PL properties of this phosphor were investigated. A single phase can be obtained by firing the stoichiometric mixtures of all-nitride precursors at 2050°C under a 0.92 MPa N2 atmosphere. The Sr3Si24Al6N40:Eu2+ shows an intense orange-yellow emission, with the emission maximum of 590 nm and internal/external quantum efficiency of 66%/52% under 400 nm excitation. It also has a quite small thermal quenching, maintaining 93% emission intensity at 150°C. In comparison to Ca-α-SiAlON:Eu2+, this Sr counterpart shows superior quantum efficiency and thermal stability, enabling it to be an interesting orange-yellow down-conversion luminescent material for white LEDs. The experimental confirmation of the existence of such 'Sr-rich' SiAlON systems, in a single-phase powder form, paves the way for the design and synthesis of novel 'Sr-rich' SiAlON-based phosphor powders with unparalleled properties.

A distinctive orange-yellow-emitting 'Sr-rich' α-SiAlON-based phosphor with quite small thermal quenching (93% PL intensity at 150°C) that can surprisingly be synthesized in a single-phase powder form for white LEDs.

Reduced-Dimensional Perovskites: Quantum Well Thickness Distribution and Optoelectronic Properties.

Reduced-dimensional perovskites (RDPs), a large category of metal halide perovskites, have attracted considerable attention and shown high potential in the fields of solid-state displays and lighting. RDPs feature a quantum-well-based structure and energy funneling effects. The multiple quantum well (QW) structure endows RDPs with superior energy transfer and high luminescence efficiency. The effect of QW confinement directly depends on the number of inorganic octahedral layers (QW thickness, i.e., n value), so the distribution of n values determines the optoelectronic properties of RDPs. Here, it is focused on the QW thickness distribution of RDPs, detailing its effect on the structural characteristics, carrier recombination dynamics, optoelectronic properties, and applications in light-emitting diodes. The reported distribution control strategies is also summarized and discuss the current challenges and future trends of RDPs. This review aims to provide deep insight into RDPs, with the hope of advancing their further development and applications.

Thin Film Stoichiometry and Defects Management for Low Threshold and Air Stable Near-Infrared Perovskite Laser.

While significant efforts have been devoted to optimize the thin-film stoichiometry and processing of perovskites for applications in photovoltaic and light-emitting diodes, there is a noticeable lack of emphasis on tailoring them for lasing applications. In this study, it is revealed that thin films engineered for efficient light-emitting diodes, with passivation of deep and shallow trap states and a tailored energetic landscape directing carriers toward low-energy emitting states, may not be optimal for light amplification systems. Instead, amplified spontaneous emission (ASE) is found to be sustained by shallow defects, driven by the positive correlation between the ASE threshold and the ratio of carrier injection rate in the emissive state to the recombination rate of excited carriers. This insight has informed the development of an optimized perovskite thin film and laser device exhibiting a low threshold (≈ 60 µJ cm-2) and stable ASE emission exceeding 21 hours in ambient conditions.

Ultra-Transparent and Multifunctional IZVO Mesh Electrodes for Next-Generation Flexible Optoelectronics.

Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices. Furthermore, they are crucial for applications in the fields of energy, display, healthcare, and soft robotics. Conducting meshes represent a promising alternative to traditional, brittle, metal oxide conductors due to their high electrical conductivity, optical transparency, and enhanced mechanical flexibility. In this paper, we present a simple method for fabricating an ultra-transparent conducting metal oxide mesh electrode using self-cracking-assisted templates. Using this method, we produced an electrode with ultra-transparency (97.39%), high conductance (Rs = 21.24 Ω sq-1), elevated work function (5.16 eV), and good mechanical stability. We also evaluated the effectiveness of the fabricated electrodes by integrating them into organic photovoltaics, organic light-emitting diodes, and flexible transparent memristor devices for neuromorphic computing, resulting in exceptional device performance. In addition, the unique porous structure of the vanadium-doped indium zinc oxide mesh electrodes provided excellent flexibility, rendering them a promising option for application in flexible optoelectronics.

High-Performance Red Transparent Quantum Dot Light-Emitting Diodes via Fully Solution-Processed MXene/Ag NWs Top Electrode.

The integration of high-performance transparent top electrodes with the functional layers of transparent quantum dot light-emitting diodes (T-QLEDs) poses a notable challenge. This study presents a composite transparent top electrode composed of MXene and Ag NWs. The composite electrode demonstrates exceptional transparency (84.6% at 620 nm) and low sheet resistance (16.07 Ω sq-1), rendering it suitable for integration into T-QLEDs. The inclusion of MXene nanosheets in the composite electrode serves a dual role: adjusting the work function to enhance electron injection efficiency and enhancing the interface between Ag NWs and the emissive layer, thereby mitigating the common issue of interfacial resistance in conventional transparent electrodes. This strategic amalgamation results in notable improvements in device performance, yielding a maximum current efficiency of 23.12 cd A-1, an external quantum efficiency of 13.98%, and a brightness of 21,015 cd m-2. These performance metrics surpass those achieved by T-LEDs employing pristine Ag NW electrodes. This study offers valuable insights into T-QLED device advancement and provides a promising approach for transparent electrode fabrication in optoelectronic applications.

UV-A Flexible LEDs Based on Core-Shell GaN/AlGaN Quantum Well Microwires.

Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core-shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes. The electrode transparency in the UV range is optimized: namely, we demonstrate that single-walled carbon nanotube electrodes provide a stable electrical contact to the membrane with high transparency (70% at 350 nm). The flexible UV-A membrane demonstrating electroluminescence around 345 nm is further applied to excite Zn-Ir-BipyPDMS luminophores: the UV-A LED is combined with the elastic luminophore-containing membrane to produce a visible amber emission from 520 to 650 nm. The obtained results pave the way for flexible inorganic light-emitting diodes to be employed in sensing, detection of fluorescent labels, or light therapy.

In-Situ Surface Repair of FAPbBr3 Quantum Dots toward High-Performance Pure-Green Perovskite Light-Emitting Diodes.

Metal halide perovskite light-emitting diodes (PeLEDs) are ideal for high-resolution displays due to their tunable emission, narrow spectra, and low-cost processing. Colloidal FAPbBr3 perovskite quantum dots (PeQDs) enhance radiative recombination, making them efficient for pure-green PeLEDs. However, their low stability and surface defects limit their practical application. Here, we address these challenges by proposing an in situ surface repair strategy using benzhydroxamic acid (BHA) as a modifier. We demonstrated that BHA can coordinate with Pb2+ ions and form hydrogen bonds with FA+ and halide ions, effectively reducing nonradiative recombination and maintaining the integrity of the PeQDs. High-quality FAPbBr3 PeQDs with a photoluminescence quantum yield (PLQY) of up to 92.5% were achieved, leading to pure-green PeLEDs with an external quantum efficiency (EQE) of 24.8% and a maximum luminance of 40,231 cd m-2, providing a feasible and promising perspective for advanced solid-state lighting and displays.

Efficient Polycrystalline Single-Cation Perovskite Light-Emitting Diodes by Simultaneous Intracrystal and Interfacial Defect Passivation.

Polycrystalline perovskite light-emitting diodes (PeLEDs) have shown great promise with high efficiency and easy processability. However, PeLEDs using single-cation polycrystalline perovskite emitters have demonstrated low efficiency due to defects within the grains and at the interfaces between the perovskite layer and the charge injection contact. Thus, simultaneous defect engineering of perovskites to suppress exciton loss within the grains and at the interfaces is crucial for achieving high efficiency in PeLEDs. Here, 1,8-octanedithiol which is a strong nucleophile, is used to increase the luminescence efficiency of a single-cation perovskite by suppressing non-radiative recombination within the grains of their polycrystalline emitter film as well as at their interface with an anode. The dithiol additive performs a multifunctional role in defect passivation, spatial confinement of excitons, and prevention of exciton quenching at the interface between the perovskite layer and the underlying hole-injection layer. Photoluminescence studies demonstrate that incorporating the dithiol additive significantly enhances the charge carrier dynamics in perovskites, resulting in an external quantum efficiency (EQE) of up to 23.46% even in a simplified PeLED that does not use a hole-injection layer. This represents the highest level of EQE achieved among devices utilizing polycrystalline single-cation perovskites.

The Deepest Blue: Major Advances and Challenges in Deep Blue Emitting Quasi-2D and Nanocrystalline Perovskite LEDs.

In this review, the recent development of blue perovskite light-emitting diodes (PeLED) are summarized. On deep-blue (≤465 nm) perovskite nanomaterials of different structural forms are mainly focused, including nanocrystals (NCs), quantum dots (QDs), nanoplatelets (NPLs), quasi-2D thin film, 3D bulk thin film, as well as lead-free perovskite nanomaterials. The current challenges are also examined in producing efficient deep-blue PeLED, such as material and spectral instability, imbalance charge transport, Joule heat impact, and poor optoelectronic performance. Several strategies are further discussed to overcome these challenges and achieve efficient deep-blue PeLED for next-generation display technology.

Superbly Efficient and Stable Ultrapure Blue Phosphorescent Organic Light-Emitting Diodes with Tetradentate Pt(II) Complex with Vibration Suppression Effect.

Blue phosphorescent organic light-emitting diodes (PHOLEDs) are on the brink of commercialization for decades. However, the external quantum efficiency (EQE) and operational lifetime of PHOLEDs are not yet reached industrial standards. Here, a novel tetradentate Pt(II) emitter with a spirofluorene onto the carbazole unit that minimizes the vibration modes, corresponding to the structural relaxation during the de-excitation, called the vibration suppression effect is reported. This modification reduces the intensity of the second peak in the spectrum and Shockley-Read-Hall recombination by blocking direct hole injection into the emitter while enhancing Förster resonance energy transfer, resulting in 451 h of LT50 (the time until a 50% decrease in initial luminance at 1000 cd m-2) and 25.1% of the maximum EQE (EQEmax). Thanks to the vibration suppression effect, an extremely narrow full width at half a maximum of 22 nm is obtained. In phosphor-sensitized thermally activated delayed fluorescent OLED, ultra-pure blue emission with Commission internationale de l'Eclairage (CIE) coordinates of (0.136, 0.096) is obtained with 28.1% of EQEmax. Furthermore, 50.3% of the EQEmax and 589 h of LT70 are simultaneously recorded with the two-stack tandem PHOLED, which is the highest EQEmax among 2-tandem and bottom-emission PHOLEDs with CIEy < 0.15.

Homogenizing Energy Landscape for Efficient and Spectrally Stable Blue Perovskite Light-Emitting Diodes.

Blue perovskite light-emitting diodes (PeLEDs) have attracted enormous attention; however, their unsatisfactory device efficiency and spectral stability still remain great challenges. Unfavorable low-dimensional phase distribution and defects with deeper energy levels usually cause energy disorder, substantially limiting the device's performance. Here, an additive-interface optimization strategy is reported to tackle these issues, thus realizing efficient and spectrally stable blue PeLEDs. A new type of additive-formamidinium tetrafluorosuccinate (FATFSA) is introduced into the quasi-2D mixed halide perovskite accompanied by interface engineering, which effectively impedes the formation of undesired low-dimensional phases with various bandgaps throughout the entire film, thereby boosting energy transfer process for accelerating radiative recombination; this strategy also diminishes the halide vacancies especially chloride-related defects with deep energy level, thus reducing nonradiative energy loss for efficient radiative recombination. Benefitting from homogenized energy landscape throughout the entire perovskite emitting layer, PeLEDs with spectrally-stable blue emission (478 nm) and champion external quantum efficiency (EQE) of 21.9% are realized, which represents a record value among this type of PeLEDs in the pure blue region.

Efficient Deep-Blue Organic Light-Emitting Diodes Employing Doublet Sensitization.

Fast and efficient exciton utilization is a crucial solution and highly desirable for achieving high-performance blue organic light-emitting diodes (OLEDs). However, the rate and efficiency of exciton utilization in traditional OLEDs, which employ fully closed-shell materials as emitters, are inevitably limited by spin statistical limitations and transition prohibition. Herein, a new sensitization strategy, namely doublet-sensitized fluorescence (DSF), is proposed to realize high-performance deep-blue electroluminescence. In the DSF-OLED, a doublet-emitting cerium(III) complex, Ce-2, is utilized as sensitizer for multi-resonance thermally activated delayed fluorescence emitter ν-DABNA. Experimental results reveal that holes and electrons predominantly recombine on Ce-2 to form doublet excitons, which subsequently transfer energy to the singlet state of ν-DABNA via exceptionally fast (over 108 s-1) and efficient (≈100%) Förster resonance energy transfer for deep-blue emission. Due to the circumvention of spin-flip in the DSF mechanism, near-unit exciton utilization efficiency and remarkably short exciton residence time of 1.36 µs are achieved in the proof-of-concept deep-blue DSF-OLED, which achieves a Commission Internationale de l'Eclairage coordinate of (0.13, 0.14), a high external quantum efficiency of 30.0%, and small efficiency roll-off of 14.7% at a luminance of 1000 cd m-2. The DSF device exhibits significantly improved operational stability compared with unsensitized reference device.

Bidirectional Inhibiting Interfacial Ion Migration in the Inorganic Hole Transport Layer for Perovskite Light-Emitting Diodes.

Cu2ZnSnS4 (CZTS) is strong candidate for hole transport in perovskite light emitting diodes (PeLEDs) due to their cost-effectiveness, deep highest occupied molecular orbital (HOMO), and high hole mobility. However, its inherent polymetallic ions usually deteriorate the quality of the perovskite emission layer (EML) affecting device performance. In this study, a bidirectional anchoring strategy is proposed by adding 15-crown-5 ether (15C5) into CZTS hole transport layer (HTL) to suppress the reaction between HTL and EML. The 15C5 molecule interacts with Cu+, Zn2+ and Sn2+ cations forming host-guest complexes to impede their migration, which is elucidated by density functional theory calculations. Additionally, 15C5 can neutralize lead (Pb) defects by the abundant oxygen (O) and high electronegative cavities to reduce the nonradiative recombination of FAPbBr3 film. This bidirectional anchoring strategy effectively improves hole charge transport efficiency and suppresses nonradiative recombination at the HTL/EML interface. As a result, the optimized PeLEDs present a 3.5 times peak external quantum efficiency (EQE) from 3.12% to 11.08% and the maximum luminance (Lmax) increased from 24495 to 50584 cd m-2. These findings offer innovative insights into addressing the metal ion migration issue commonly observed in inorganic HTLs.

The Perovskite Optoelectronic Devices - A Look at the Future.

The perovskite materials are broadly incorporated into optoelectronic devices due to a number of advantages. Their rapid technological progress is related to the relatively simple fabrication process, low production cost and high efficiency. Significant improvement is made in the light emitting, detection performance and device design especially operating in the visible and near-infrared regions. This review presents the status and possible future development of the perovskite devices such as solar cells, photodetectors, and light-emitting diodes. The fundamental properties of perovskite materials related to their effective device applications are summarized. Since the development of the perovskite technology is mainly driven by the revolutionary evolution of the semiconductor perovskite solar cell as a robust candidate for next-generation solar energy harvesting, this topic is considered first. The device engineering of various perovskite photodetector structures, including perovskite quantum dot photodetectors, is then discussed in detail. Their performance is compared with the current commercial photodetectors available on the global market together with their challenges. Finally, the considerable progress in the fabrication of the perovskite light-emitting diodes with external quantum efficiency exceeding 20% is presented. The paper is completed in an attempt to determine the development of perovskite optoelectronic devices in the future.