Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries.

Exploring emerging two-dimensional (2D) van der Waals (vdW) semiconducting materials and precisely tuning their electronic properties at the atomic level have long been recognized as crucial issues for developing their high-end electronic and optoelectronic applications. As a III-VI semiconductor, ultrathin layered hexagonal GaTe (h-GaTe) remains unexplored in terms of its intrinsic electronic properties and band engineering strategies. Herein, we report the successful synthesis of ultrathin h-GaTe layers on a selected graphene/SiC(0001) substrate, via molecular beam epitaxy (MBE). The widely tunable quasiparticle band gaps (∼2.60-1.55 eV), as well as the vdW quantum well states (QWSs) that can be strictly counted by the layer numbers, are well characterized by onsite scanning tunneling microscopy/spectroscopy (STM/STS), and their origins are clearly addressed by density functional theory (DFT) calculations. More intriguingly, distinctive 8|8E and 4|4P (Ga) mirror twin boundaries (MTBs) are identified in the ultrathin h-GaTe flakes, which can induce decreased band gaps and prominent p-doping effects. This work should deepen our understanding on the electronic tunability of 2D III-VI semiconductors by thickness control and line defect engineering, which may hold promise for fabricating atomic-scale vertical and lateral homojunctions toward ultrascaled electronics and optoelectronics.

Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.

Zincblende GaN has the potential to improve the efficiency of green- and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high densities of stacking faults are found in current zincblende GaN structures. This study presents a cathodoluminescence spectroscopy investigation into the low-temperature optical behaviour of a zincblende GaN/InGaN single quantum well structure. In panchromatic cathodoluminescence maps, stacking faults are observed as dark stripes, and are associated with non-radiative recombination centres. Furthermore, power dependent studies were performed to address whether the zincblende single quantum well exhibited a reduction in emission efficiency at higher carrier densities-the phenomenon known as efficiency droop. The single quantum well structure was observed to exhibit droop, and regions with high densities of stacking faults were seen to exacerbate this phenomenon. Overall, this study suggests that achieving efficient emission from zinc-blende GaN/InGaN quantum wells will require reduction in the stacking fault density.

Quasi-Homoepitaxial Growth of Highly Strained Alkali-Metal Ultrathin Films on Kagome Superconductors.

Applying lattice strain to thin films, a critical factor to tailor their properties such as stabilizing a structural phase unstable at ambient pressure, generally necessitates heteroepitaxial growth to control the lattice mismatch with substrate. Therefore, while homoepitaxy, the growth of thin film on a substrate made of the same material, is a useful method to fabricate high-quality thin films, its application to studying strain-induced structural phases is limited. Contrary to this general belief, here the quasi-homoepitaxial growth of Cs and Rb thin films is reported with substantial in-plane compressive strain. This is achieved by utilizing the alkali-metal layer existing in bulk crystal of kagome metals AV3Sb5 (A = Cs and Rb) as a structural template. The angle-resolved photoemission spectroscopy measurements reveal the formation of metallic quantum well states and notable thickness-dependent quasiparticle lifetime. Comparison with density functional theory calculations suggests that the obtained thin films crystalize in the face-centered cubic structure, which is typically stable only under high pressure in bulk crystals. These findings provide a useful approach for synthesizing highly strained thin films by quasi-homoepitaxy, and pave the way for investigating many-body interactions in Fermi liquids with tunable dimensionality.

Long-Term Comparisons of Photoluminescence Affected by Organic Cations of Formamidinium and Methylammonium in Monophasic Lead Iodide Perovskite Quantum Dots.

This study compared the photoluminescence (PL) stabilities of formamidinium (FA) and methylammonium (MA) in lead iodide perovskite quantum dots (QDs). To exclude other factors, such as size and purity, that may affect stability, MAPbI3 and FAPbI3 QDs with nearly identical sizes (~10.0 nm) were synthesized by controlling the ligand concentration and synthesis temperature. Transmission electron microscopy images and X-ray diffraction patterns confirmed homogeneous single-phase perovskite structures. Additionally, the bandgaps and sizes of the synthesized QDs closely matched those of the infinite quantum well model, which guaranteed that the photostability was solely caused by the different organic molecules in the two QDs. We analyzed the PL peak centers and full-width at half maximum of the QDs for 32 days. The enhanced stability of FAPbI3 was found to be caused by the nearly zero redshift (1.615 eV) of its PL peak, in contrast to the redshift (1.685→1.670 eV) of MAPbI3.

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation.

In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1-xN/GaN/AlxGa1-xN material system, with a fixed aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, we propose employing mesa etching and nitrogen ion implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise and improve overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and its applications.

Gradient Alloy Shell Enabling Colloidal Quantum Wells Light-Emitting Diodes with Efficiency Exceeding 22.

Colloidal quantum well (CQW) based light emitting diodes (LEDs) possess extra-high theoretical efficiency, but their performance still lags far behind conventional LEDs due to severe exciton quenching and unbalanced charge injection. Herein, we devised a gradient composition CdxZn1-xS shell to address these issues. The epitaxial shell with gradient composition was achieved through controlling competition between Cd2+ and Zn2+ cations to preferentially bind to the anions S2-. Thus, exciton quenching was suppressed greatly by passivating defects and reducing nonradiative recombination, thereby achieving near-unity photoluminescence quantum yield (PLQY). The gradient energy level of the shell reduced the hole injection barriers and increased the hole injection efficiency to balance the charge injection of LEDs. As a result, the LEDs achieved a high external quantum efficiency (EQE) of 22.83%, luminance of 111,319 cd/m2 and a long operational lifetime (T95@100 cd/m2) over 6,500 h, demonstrating the state-of-the-art performance for the CQW based LEDs.

Constructing ZnTe Spherical Quantum Well for Efficient Light Emission.

ZnTe colloidal semiconductor nanocrystals (NCs) have shown promise for light-emitting diodes (LEDs) and displays, because they are free from toxic heavy metals (Cd). However, so far, their low photoluminescence (PL) efficiency (∼30%) has hindered their applications. Herein, we devised a novel structure of ZnTe NCs with the configuration of ZnSe (core)/ZnTe (spherical quantum well, SQW)/ZnSe (shell). The inner layer ZnTe was grown at the surface of ZnSe core with avoiding using highly active and high-risk Zn sources. Due to the formation of coherently strained heterostructure which reduced the lattice mismatch, and the thermodynamic growth of ZnTe, the surface or interface defects were suppressed. A high PL efficiency of >60% was obtained for the green light-emitting ZnSe/ZnTe/ZnSe SQWs after ZnS outer layer passivation, which is the highest value for colloidal ZnTe-based NCs. This work paves the way for the development of novel semiconductor NCs for luminescent and display applications.

Regulating The Electronic Configuration of Low-Dimensional Hybrid Perovskites via Organic Cations for Self-Powered Ultraviolet Photodetectors.

Ultraviolet photodetectors (UPDs) based on low-dimensional halide perovskites have undergone rapid development. Here, regulation of the electronic configuration of low-dimensional hybrid perovskites are reported via organic cations for self-powered UPDs. For the first time, it is determine that the rational design of organic cation phenyl alkylammonium can effectively prevent phonon scattering thus increasing charge carrier extraction in low dimensional lead chlorine perovskite thin-films. As a result, the exciton-binding energy can be reduced to 62.91 meV in (PMA)2 PbCl4 perovskite films with a charge-carrier mobility of 0.335 cm2  V-1  s-1 . The fabricated (PMA)2 PbCl4 -based self-powered UPDs has achieved a high detectivity of 6.32 × 1013 jones with a low noise current of 0.35 pA Hz-1/2 under zero bias. A further demonstration of images with high UV to visible light rejection ratio under weak-light illumination of 70 nW cm-2 highlights the feasible potential application of low-dimensional perovskite.

Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells.

A two-dimensional (2D) quantum electron system is characterized by quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the intersubband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also the out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors, and modulators.

Topological Quantum Well States in Pb/Sb Thin-Film Heterostructures.

Composite topological heterostructures, wherein topologically protected states are electronically tuned due to their proximity to other matter, are key avenues for exploring emergent physical phenomena. Particularly, pairing a topological material with a superconductor such as Pb is a promising means for generating a topological superconducting phase with exotic Majorana quasiparticles, but oft-neglected is the emergence of bulklike spin-polarized states that are quite relevant to applications. Using high-resolution photoemission spectroscopy and first-principles calculations, we report the emergence of bulk-like spin-polarized topological quantum well states with long coherence lengths in Pb films grown on the topological semimetal Sb. The results establish Pb/Sb heterostructures as topological superconductor candidates and advance the current understanding of topological coupling effects required for realizing emergent physics and for designing advanced spintronic device architectures.

Bias-Tunable Quantum Well Infrared Photodetector.

With the rapid advancement of Artificial Intelligence-driven object recognition, the development of cognitive tunable imaging sensors has become a critically important field. In this paper, we demonstrate an infrared (IR) sensor with spectral tunability controlled by the applied bias between the long-wave and mid-wave IR spectral regions. The sensor is a Quantum Well Infrared Photodetector (QWIP) containing asymmetrically doped double QWs where the external electric field alters the electron population in the wells and hence spectral responsivity. The design rules are obtained by calculating the electronic transition energies for symmetric and antisymmetric double-QW states using a Schrödinger-Poisson solver. The sensor is grown and characterized aiming detection in mid-wave (~5 µm) to long-wave IR (~8 µm) spectral ranges. The structure is grown using molecular beam epitaxy (MBE) and contains 25 periods of coupled double GaAs QWs and Al0.38Ga0.62As barriers. One of the QWs in the pair is modulation-doped to provide asymmetry in potential. The QWIPs are tested with blackbody radiation and FTIR down to 77 K. As a result, the ratio of the responsivities of the two bands at about 5.5 and 8 µm is controlled over an order of magnitude demonstrating tunability between MWIR and LWIR spectral regions. Separate experiments using parameterized image transformations of wideband LWIR imagery are performed to lay the framework for utilizing tunable QWIP sensors in object recognition applications.

Approaches to Enhance the Stability of Colloidal Quantum Well Light- Emitting Diodes.

Colloidal quantum well light-emitting diodes (CQW-LEDs) show great potential for applications in displays and lighting due to their advantages, such as high color purity, spectral tunability and compatibility with flexible electronics. So far, attention has been mainly devoted to pursuing device efficiencies rather than achieving device stability, leading to the fact that the lifetime of CQW-LEDs is far from the demand for practical applications. In this perspective, various approaches to enhance the stability of CQW-LEDs have been discussed, including the synthesis of stable CQW materials, the selection of stable transport layers, the improvement of charge balance, and the introduction of advanced encapsulation techniques.

Functional-Group-Induced Single Quantum Well Dion-Jacobson 2D Perovskite for Efficient and Stable Inverted Perovskite Solar Cells.

In two-dimensional/three-dimensional (2D/3D) perovskite heterostructure, randomly distributed multiple quantum wells (QW) 2D perovskites are frequently generated, which are detrimental to carrier transport and structural stability. Here, the high quality 2D/3D perovskite heterostructure is constructed by fabricating functional-group-induced single QW Dion-Jacobson (DJ) 2D perovskites. The utilization of ─OCH3 in the precursor solution facilitates the formation of colloidal particles with uniform size, resulting in the production of a pure 2D DJ perovskite with an n value of 3. This strategy facilitates the improvement of 3D structural stability and expedites carrier transport. The resultant devices accomplish a power conversion efficiency of 25.26% (certified 25.04%) and 23.56% at a larger area (1 cm2 ) with negligible hysteresis. The devices maintain >96% and >89% of their initial efficiency after continuous maximum power point tracking under simulated AM1.5 illumination for 1300 h and under damp-heat conditions (85 °C and 85% RH) for 1010 h, respectively.

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence.

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.

Design of low-threshold photonic-crystal surface-emitting lasers with confined gain regions by using selective area intermixing.

Photonic-crystal surface-emitting lasers have many promising properties over traditional semiconductor lasers and are regarded as the next-generation laser sources. However, the minimum achievable lasing threshold of PCSELs is still several times larger than that of VCSELs, and limiting its applications especially if the required power is small. Here, we propose a new design that reduces the gain region in the lateral plane by using selective quantum-well intermixing to reduce the threshold current of PCSELs. By performing theoretical calculations, we confirmed that the threshold current can be lowered by a factor of two to three while keeping the PCSEL's advantage of small divergence angle.

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells.

Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities.

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission efficiency significantly increases upon the insertion of an In-containing underlayer, whose role is to prevent the introduction of point defects during the growth of InGaN QWs. Hence, we demonstrate that point defects play a key role in limiting InGaN QW efficiency, even in samples where their density (2-3 × 109 cm-2) is much lower than that of TD (2-3 × 1010 cm-2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of point defects over TDs in QW efficiency. Interestingly, TD terminations lead to the formation of independent domains for carriers, thanks to V-pits and step bunching phenomena.

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980-990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1-xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic.

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells.

Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier-well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

Efficient Second-Harmonic Generation from Dielectric Inter-subband Polaritonic Metasurfaces Coupled to Lattice Resonance.

Nonlinear optical metasurfaces offer a possibility to perform frequency mixing without the phase-matching constraints of bulk nonlinear crystals and with control of the local nonlinear response at a sub-wavelength scale. Nonlinear inter-subband polaritonic metasurfaces created by combining the semiconductor heterostructures with quantum-engineered inter-subband nonlinear response and electromagnetically engineered metal-clad nanoresonators offer by far the largest second-order nonlinear response of all condensed matter systems reported to date. However, the nonlinear optical response of these metasurfaces is limited by optical intensity saturation in the nanoresonator hot spots that prevented the achievement of power conversion efficiencies over 0.2% in three-wave mixing experiments. In this study, we propose and experimentally demonstrate dielectric inter-subband polaritonic metasurfaces for second-harmonic generation that achieve 0.37% power conversion efficiency. Our structure is created by a new design approach that combines dielectric resonators inducing Mie resonant modes with a lattice resonance to achieve a uniform and high field enhancement throughout the meta-atom volume.