Comparison of safety and effectiveness of micropulse transscleral cyclophotocoagulation and "slow cook" diode laser transscleral cyclophotocoagulation in patients with refractory open-angle glaucoma

ABSTRACT Purpose: This study aimed to compare the safety and effectiveness of intraocular pressure reduction between micropulse transscleral cyclophotocoagulation and "slow cook" transscleral cyclophotocoagulation in patients with refractory primary open-angle glaucoma. Methods: We included patients with primary open angle glaucoma with at least 12 months of follow-up. We collected and analyzed data on the preoperative characteristics and postoperative outcomes. The primary outcomes were a reduction of ≥20% of the baseline value (criterion A) and/or intraocular pressure between 6 and 21 mmHg (criterion B). Results: We included 128 eyes with primary open-angle glaucoma. The preoperative mean intraocular pressure was 25.53 ± 6.40 and 35.02 ± 12.57 mmHg in the micropulse- and "slow cook" transscleral cyclophotocoagulation groups, respectively (p<0.001). The mean intraocular pressure was reduced significantly to 14.33 ± 3.40 and 15.37 ± 5.85 mmHg in the micropulse- and "slow cook" transscleral cyclophotocoagulation groups at the last follow-up, respectively (p=0.110). The mean intraocular pressure reduction at 12 months was 11.20 ± 11.46 and 19.65 ± 13.22 mmHg in the micropulse- and "slow cook" transscleral cyclophotocoagulation groups, respectively (p<0.001). The median preoperative logMAR visual acuity was 0.52 ± 0.69 and 1.75 ± 1.04 in the micropulse- and "slow cook" transscleral cyclophotocoagulation groups, respectively (p<0.001). The mean visual acuity variation was −0.10 ± 0.35 and −0.074 ± 0.16 in the micropulse- and "slow cook" transscleral cyclophotocoagulation, respectively (p=0.510). Preoperatively, the mean eye drops were 3.44 ± 1.38 and 2.89 ± 0.68 drugs in the micropulse- and "slow cook" transscleral cyclophotocoagulation groups, respectively (p=0.017), but those were 2.06 ± 1.42 and 1.02 ± 1.46 at the end of the study in the "slow cook" and micropulse transscleral cyclophotocoagulation groups, respectively (p<0.001). The success of criterion A was not significant between both groups. Compared with 11 eyes (17.74%) in the "slow cook" transscleral cyclophotocoagulation group, 19 eyes (28.78%) in the micropulse transscleral cyclophotocoagulation group showed complete success (p=0.171). For criterion B, 28 (42.42%) and 2 eyes (3.22%) showed complete success after micropulse- and "slow cook" transscleral cyclophotocoagulation, respectively (p<0.001). Conclusion: Both techniques reduced intraocular pressure effectively.

Liquid Metal Oxide-Assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics.

Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductor-based electronics.

Dual Active Sites with Charge-asymmetry in Organic Semiconductors Promoting C-C Coupling for Highly Efficient CO2 Photoreduction to Ethanol.

Selective CO2 photoreduction into high-energy-density and high-value-added C2 products is an ideal strategy to achieve carbon neutrality and energy shortage, but it is still highly challenging due to the large energy barrier of the C-C coupling step and severe exciton annihilation in photocatalysts. Herein, strong and localized charge polarization is successfully induced on the surface of melon-based organic semiconductors by creating dual active sites with a large charge asymmetry. Confirmed by multiscale characterization and theoretical simulations, such asymmetric charge distribution, originated from the oxygen dopants and nitrogen vacancies over melon-based organic semiconductors, reduces exciton binding energy and boosts exciton dissociation. The as-formed charge polarization sites not only donate electrons to CO2 molecules but also accelerate the coupling of asymmetric *CO*CO intermediates for CO2 photoreduction into ethanol by lowering the energy barrier of this process. Consequently, an exceptionally high selectivity of up to 97% for C2H5OH and C2H5OH yield of 0.80 mmol g-1 h-1 have been achieved on this dual active sites organic semiconductor. This work, with its potential applicability to a variety of non-metal multi-site catalysts, represents a versatile strategy for the development of advanced catalysts tailored for CO2 photoreduction reactions.

Giant Valley Zeeman Splitting in Vanadium-Doped WSe2 Monolayers.

2D dilute magnetic semiconductors (DMS) based on transition metal dichalcogenides (TMD) offer an innovative pathway for advancing spintronic technologies, including the potential to exploit phenomena such as the valley Zeeman effect. However, the impact of magnetic ordering on the valley degeneracy breaking and on the enhancement of the optical transitions g-factors of these materials remains an open question. Here, a giant effective g-factors ranging between ≈-27 and -69 for the bound exciton at 4 K in vanadium-doped WSe2 monolayers, obtained through magneto-photoluminescence (PL) experiments is reported. This giant g-factor disappears at room temperature, suggesting that this response is associated with a magnetic ordering of the vanadium impurity states at low temperatures. Ab initio calculations for the vanadium-doped WSe2 monolayer confirm the existence of magnetic ordering of the vanadium states, which leads to degeneracy breaking of the valence bands at K and K'. A phenomenological analysis is employed to correlate this splitting with the measured enhanced effective g-factor. The findings shed light on the potential of defect engineering of 2D materials for spintronic applications.

Investigating Material Interface Diffusion Phenomena through Graph Neural Networks in Applied Materials.

Understanding and predicting interface diffusion phenomena in materials is crucial for various industrial applications, including semiconductor manufacturing, battery technology, and catalysis. In this study, we propose a novel approach utilizing Graph Neural Networks (GNNs) to investigate and model material interface diffusion. We begin by collecting experimental and simulated data on diffusion coefficients, concentration gradients, and other relevant parameters from diverse material systems. The data are preprocessed, and key features influencing interface diffusion are extracted. Subsequently, we construct a GNN model tailored to the diffusion problem, with a graph representation capturing the atomic structure of materials. The model architecture includes multiple graph convolutional layers for feature aggregation and update, as well as optional graph attention layers to capture complex relationships between atoms. We train and validate the GNN model using the preprocessed data, achieving accurate predictions of diffusion coefficients, diffusion rates, concentration profiles, and potential diffusion pathways. Our approach offers insights into the underlying mechanisms of interface diffusion and provides a valuable tool for optimizing material design and engineering. Additionally, our method offers possible strategies to solve the longstanding problems related to materials interface diffusion.

Facile formation of van der Waals metal contact with III-nitride semiconductors.

Metal-semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices. The exploration of van der Waals (vdW) metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at the metal-semiconductor interface, with particular success in two-dimensional layered semiconductors, triggering unprecedented electrical and optical characteristics. In this work, for the first time, we report the direct integration of vdW metal contacts with bulk wide bandgap gallium nitride (GaN) by employing a dry transfer technique. High-angle annular dark-field scanning transmission electron microscopy explicitly illustrates the existence of a vdW gap between the metal electrode and GaN. Strikingly, compared with devices fabricated with electron beam-evaporated metal contacts, the vdW contact device exhibits a responsivity two orders of magnitude higher with a significantly suppressed dark current in the nanoampere range. Furthermore, by leveraging the high responsivity and persistent photoconductivity obtained from vdW contact devices, we demonstrate imaging, wireless optical communication, and neuromorphic computing functionality. The integration of vdW contacts with bulk semiconductors offers a promising architecture to overcome device fabrication challenges, forming nearly ideal metal-semiconductor contacts for future integrated electronics and optoelectronics.

The Comparison of 940nm and 810nm Diode Laser Effects on the Repair of Inferior Alveolar Sensory Nerve Injury: A Clinical Trial.

Statement of the Problem: Healing of the inferior alveolar nerve injury during dental procedures is one of the biggest concerns of dentists. There are still debates on different treatment modalities. Purpose: This study aimed to compare the effect of 940nm and 810nm diode lasers on the repair of the inferior alveolar sensory nerve. Materials and Method: In this single-blinded randomized clinical trial, 39 patients with inferior alveolar nerve injury were divided into three groups: 1. 810nm laser irradiated, 2. 940nm laser irradiated, and 3. No laser irradiation (control group). All patients were treated in 12 sessions (3 days per week) and evaluated using a complete clinical neurosensory test (CNT), including brushstroke, 2-point discrimination, pinprick nociception, and thermal discrimination before and after treatment. Results: The mean dysesthesia of the patient treated with 810nm diode laser was significantly lower than the control group in all sessions (the 1st (p= 0.003), 3rd (p= 0.008), 7th (p= 0.006), and 12th sessions (p= 0.005)). The 810nm laser resulted in more satisfaction in patients than the control group in almost all sessions (1st (p< 0.001), 7th (p= 0.028), and 12th (p= 0.006)). More patient satisfaction was seen in the 1st and 3rd sessions in the 810nm laser than in the 980nm laser (p< 0.001 and p= 0.003, respectively). Conclusion: 810nm diode laser can be better than 940nm in repairing inferior alveolar sensory nerve damage.

Anion-Driven Bandgap Tuning of AgIn(SxSe1-x)2 Quantum Dots.

Accurate tuning of the electronic and photophysical properties of quantum dots is required to maximize the light conversion efficiencies in semiconductor-assisted processes. Herein, we report a facile synthetic procedure for AgIn(SxSe1-x)2 quantum dots with S content (x) ranging from 1 to 0. This simple approach allowed us to tune the bandgap (2.6-1.9 eV) and extend the absorption of AgIn(SxSe1-x)2 quantum dots to lower photon energies (near-IR) while maintaining a small QD size (∼5 nm). Ultraviolet spectroscopy studies revealed that the change in the bandgap is modulated by the electronic shifts in both the valence band and the conduction band positions. The negative overall charge of the as-synthesized quantum dots enabled us to make films of quantum dots on mesoscopic TiO2. Excited state studies of the AgIn(SxSe1-x)2 quantum dot films demonstrated a fast charge injection to TiO2, and the electron transfer rate constant was found to be 1.5-3.5 × 1011 s-1. The results of this work present AgIn(SxSe1-x)2 quantum dots synthesized by the one-step method as a potential candidate for designing light-harvesting assemblies.

Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge.

A van der Waals (vdW) α-In2Se3 ferroelectric semiconductor channel-based field-effect transistor (FeS-FET) has emerged as a next-generation electronic device owing to its versatility in various fields, including neuromorphic computing, nonvolatile memory, and optoelectronics. However, screening charges cause by the imperfect surface morphology of vdW α-In2Se3 inhibiting electrical polarization remain an unresolved issue. In this study, for the first time, a method is elucidated to recover the inherent electric polarization in both in- and out-of-plane directions of the α-In2Se3 channel based on post-exfoliation annealing (PEA) and improve the electrical performance of vdW FeS-FETs. Following PEA, an ultra-thin In2Se3-3xO3x layer formed on the top surface of the α-In2Se3 channel is demonstrated to passivate surface defects and enhance the electrical performance of FeS-FETs. The on/off current ratio of the α-In2Se3 FeS-FET has increased from 5.99 to 1.84 × 106, and the magnitude of ferroelectric resistance switching has increased from 1.20 to 26.01. Moreover, the gate-modulated artificial synaptic operation of the α-In2Se3 FeS-FET is demonstrated and illustrate the significance of the engineered interface in the vdW FeS-FET for its application to multifunctional devices. The proposed α-In2Se3 FeS-FET is expected to provide a significant breakthrough for advanced memory devices and neuromorphic computing.

Heterostructured g-C3N4/Bi2WO6 Composites as Highly Efficient Photocatalysts for Selective Atmospheric Oxidation of Thiols to Disulfides.

Improving the transmission and separation efficiency of light carriers is considered an effective method to enhance the catalytic performance of semiconductor photocatalysis. Herein, we report the synthesis and application of g-C3N4/Bi2WO6 heterostructure nanosheets for the photocatalytic coupling of thiols to disulfides under visible light irradiation. The heterojunction exhibits significant photocatalytic performance compared to the bare catalyst, which dramatically enhances the separation and transfer of photogenerated charge carriers due to the remarkable hole-trapping ability of g-C3N4. Various functional symmetrical and asymmetrical disulfides have been effectively prepared by employing this heterostructure photocatalytic system, which features excellent photocatalytic activity and cycling stability. The outstanding photocatalytic activity of the semiconductor heterojunction catalyst provides an economical, sustainable, and thus green process for producing disulfides.

Strategic Design and Mechanistic Understanding of Vacancy-Filling Heusler Thermoelectric Semiconductors.

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.

Imaging of Volatile Organic Compounds Using a Single Nanowire-Based Electronic Nose for Future Biomedical Applications.

This study introduces an array of semiconductor oxide single nanowires fabricated using advanced semiconductor processing techniques, including electron beam lithography and thin-film deposition, which is well-suited for large-scale nanowire integration. A four-channel nanowire array consisting of tin oxide (SnO2), indium oxide (In2O3), ferric oxide (Fe3O4), and titanium oxide (TiO2) was developed. As a proof of concept, we converted the response curves of the sensor array to heat maps, enabling comprehensive feature representation. The fabricated electronic nose (E-nose) was utilized to detect three types of volatile organic compounds (VOCs), with the results visualized in a heat map format. Additionally, the performance of each individual sensor was quantitatively studied, highlighting the array's potential for enhanced gas detection and analysis. To further illustrate the interaction between gas molecules and the nanowires, we visualized the gas response results by mapping the sensor's signal changes. These visualizations provide a clear representation of how different gas molecules interact with specific nanowires. For example, the heat maps reveal distinct response patterns for each type of VOC, allowing for the identification and differentiation of gases based on their unique signatures. This visualization technique not only enhances the understanding of gas-nanowire interactions but also demonstrates the effectiveness of the E-nose in distinguishing between various VOCs. The SnO2 nanowire gas sensor showed enhanced gas response compared to other materials. The SnO2 and TiO2 gas sensors showed enhanced response (62 and 56 s) and recovery times (100 and 37 s).

On-demand green/red light-responsive self-doped SnO2 nanoparticles for single/multi-color transitioning fabrics.

Semiconductor/redox-based dual light-induced color switching systems (LCSs) with a visible light response at different wavelengths are highly sought after for efficient redox reactions. In this work, Sn2+ self-doped SnO2 has been designed as nanophotocatalysts for preparing visible light-responsive inks/fabrics with single/multi-color abilities. The self-doping of SnO2 nanoparticles results in the formation of oxygen vacancies due to charge compensation effects leading to electron-driven photoreduction and photooxidation of LSC inks. By mixing SnO2-x nanoparticles dispersions with specific redox-sensitive dyes can lead to the creation of well-designed sets of visible light-responsive semiconductor-driven LCS systems with both single-color (RGB) and multi-color (violet and green) changes. The exposure of LCS inks to green (550 nm) light culminates in the rapid photoreduction of the inks to decolorized state, while red (660 nm) light initiates the photooxidation in air. The combination of the LCS inks with -OH-rich polymers can be coated on the hydrophobic surface of the layered fabric to produce photo-responsive fabrics with single/multi-color response. The interaction of green light with the semiconductor-driven LCS systems allows the remote photo-printing of different images/letters on the LCS fabrics. Spontaneous erasure can be achieved by red light with high stability and repeatability (>35 cycles). The research in this paper provides new perspectives and insights for the development of new color-changing materials with potential applications as light-activated sensors and display units.

Study on Data Preprocessing for Machine Learning Based on Semiconductor Manufacturing Processes.

Various data types generated in the semiconductor manufacturing process can be used to increase product yield and reduce manufacturing costs. On the other hand, the data generated during the process are collected from various sensors, resulting in diverse units and an imbalanced dataset with a bias towards the majority class. This study evaluated analysis and preprocessing methods for predicting good and defective products using machine learning to increase yield and reduce costs in semiconductor manufacturing processes. The SECOM dataset is used to achieve this, and preprocessing steps are performed, such as missing value handling, dimensionality reduction, resampling to address class imbalances, and scaling. Finally, six machine learning models were evaluated and compared using the geometric mean (GM) and other metrics to assess the combinations of preprocessing methods on imbalanced data. Unlike previous studies, this research proposes methods to reduce the number of features used in machine learning to shorten the training and prediction times. Furthermore, this study prevents data leakage during preprocessing by separating the training and test datasets before analysis and preprocessing. The results showed that applying oversampling methods, excluding KM SMOTE, achieves a more balanced class classification. The combination of SVM, ADASYN, and MaxAbs scaling showed the best performance with an accuracy and GM of 85.14% and 72.95%, respectively, outperforming all other combinations.

Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe2-CrI3 p-n Heterojunction.

Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI3-WSe2-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI3-FLG-hBN heterostructure was also fabricated on identical CrI3 and FLGs for better comparison. Our results show that the WSe2-CrI3 heterostructure, acting as a p-n heterojunction, has advantageous capability in light detection, especially in self-powered light helicity detecting. In the WSe2-CrI3 heterojunction, the absolute value of photocurrent IPH exhibits obvious asymmetry with respect to the bias V, with the IPH of reversely biased WSe2-CrI3 p-n heterojunction being larger. When the CrI3 is fully spin-polarized under a 3 T magnetic field, the reversely biased WSe2-CrI3 heterojunction exhibits advantageous capability in light helicity detecting. Both the short-circuit currents ISC and IPH show one-cycle fluctuation behaviors when the quarter-wave plate rotates 180°, and the corresponding photoresponsivity helicities can be as high as 18.0% and 20.1%, respectively. We attribute the spin-enhanced photovoltaic effect in the WSe2-CrI3 heterojunction and its contribution to circularly polarized light detection to the coordination function of the spin-filter CrI3, the valley electronic monolayer WSe2, and the spin-dependent charge transfer between them. Our work helps us understand the interplay between the magnetic and optoelectronic properties of WSe2-CrI3 heterojunctions and promotes the developing progress of prospective 2D spin optoelectronic devices.

Large Number of Direct or Pseudo-Direct Band Gap Semiconductors among A3TrPn2 Compounds with A = Li, Na, K, Rb, Cs; Tr = Al, Ga, In; Pn = P, As.

Due to the high impact of semiconductors with respect to many applications for electronics and energy transformation, the search for new compounds and a deep understanding of the structure-property relationship in such materials has a high priority. Electron-precise Zintl compounds of the composition A3TrPn2 (A = Li - Cs, Tr = Al - In, Pn = P, As) have been reported for 22 possible element combinations and show a large variety of different crystal structures comprising zero-, one-, two- and three-dimensional polyanionic substructures. From Li to Cs, the compounds systematically lower the complexity of the anionic structure. For an insight into possible crystal-structure band-structure relations for all compounds (experimentally known or predicted), their band structures, density of states and crystal orbital Hamilton populations were calculated on a basis of DFT/PBE0 and SVP/TZVP basis sets. All but three (Na3AlP2, Na3GaP2 and Na3AlAs2) compounds show direct or pseudo-direct band gaps. Indirect band gaps seem to be linked to one specific structure type, but only for Al and Ga compounds. Arsenides show smaller band gaps than phosphides due to weaker Tr-As bonds. The bonding situation was confirmed by a Mullikan analysis, and most states close to the Fermi level were assigned to non-bonding orbitals.

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2.

The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS2) shed light on their behavior under various deposition conditions and temperatures. The examination involves extensive techniques including X-ray photoelectron spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Bi contacts formed a van der Waals interface on MoS2 regardless of deposition conditions, such as ultrahigh vacuum (UHV, 3 × 10-11 mbar) and high vacuum (HV, 4 × 10-6 mbar), while the oxidation on MoS2 has been observed. However, the semimetallic properties of Bi suppress the impact of defect states, including oxidized-MoS2 and vacancies. Notably, the n-type characteristic of Bi/MoS2 remains unaffected, and no significant changes in the local density of states near the conduction band minimum are observed despite the presence of defects detected by STM and STS. As a result, the Fermi level (EF) resides below the conduction band of MoS2. The study also examines the impact of annealing on the contact interface, revealing no interface reaction between Bi and MoS2 up to 300 °C. These findings enhance our understanding of semimetal (Bi) contacts on MoS2, with implications for improving the performance and reliability of electronic devices.

Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy.

Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role in determining device performance, while its spatial-temporal mapping remains lacking. In this study, we employ scanning ultrafast electron microscopy (SUEM), an emerging technique that combines high spatial-temporal resolution and surface sensitivity, to investigate photocarrier dynamics across a Si/Ge heterojunction. Charge dynamics are selectively examined across the junction and compared to far bulk areas, through which the impact of the built-in potential, band offsets, and surface effects is directly visualized. In particular, we find that the heterojunction drastically modifies the hot photocarrier diffusivities in both Si and Ge regions due to charge trapping. These findings are further elucidated with insights from the band structure and surface potential measured by complementary techniques. This work demonstrates the tremendous effect of heterointerfaces on hot photocarrier dynamics and showcases the potential of SUEM in characterizing realistic optoelectronic devices.

Structural and Physical Properties of Two Distinct 2D Lead Halides with Intercalated Cu(II).

Transition metal cation intercalation between the layers of two-dimensional (2D) metal halides is an underexplored research area. In this work we focus on the synthesis and physical property characterizations of two layered hybrid lead halides: a new compound [Cu(O2C-CH2-NH2)2]Pb2Br4 and the previously reported [Cu(O2C-(CH2)3-NH3)2]PbBr4. These compounds exhibit 2D layered crystal structures with incorporated Cu2+ between the metal halide layers, which is achieved by combining Cu(II) and lead bromide with suitable amino acid precursors. The resultant [Cu(O2C-(CH2)3-NH3)2]PbBr4 adopts a 2D layered perovskite structure, whereas the new compound [Cu(O2C-CH2-NH2)2]Pb2Br4 crystallizes with a new structure type based on edge-sharing dodecahedral PbBr5O3 building blocks. [Cu(O2C-CH2-NH2)2]Pb2Br4 is a semiconductor with a bandgap of 3.25 eV. It shows anisotropic charge transport properties with a semiconductor resistivity of 1.44×1010 Ω·cm (measured along the a-axis) and 2.17×1010 Ω·cm (along the bc-plane), respectively. The fabricated prototype detector based on this material showed response to soft low-energy X-rays at 8 keV with a detector sensitivity of 1462.7 µCGy-1cm-2, indicating its potential application for ionizing radiation detection. These encouraging results are discussed together with the results from density functional theory calculations, optical, magnetic, and thermal property characterization experiments.

Interlayer and Moiré excitons in atomically thin double layers: From individual quantum emitters to degenerate ensembles.

Abstract: Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition-metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by electric fields and the study of thermalized bosonic quasiparticles, from the single particle level to interacting degenerate dense ensembles. Additionally, the freedom to combine bilayers of different van der Waals materials without lattice or relative twist-angle constraints leads to layer-hybridized and Moiré excitons, which can be widely engineered. This article covers fundamental aspects of IXs, including correlation phenomena as well as the consequence of Moiré superlattices with a strong focus on TMD homo- and heterobilayers.