SiC Electrochemical Sensor Validation for Alzheimer Aß42 Antigen Detection.

Alzheimer's disease (AD) is a neurodegenerative disease with only late-stage detection; thus, diagnosis is made when it is no longer possible to treat the disease, only its symptoms. Consequently, this often leads to caregivers who are the patient's relatives, which adversely impacts the workforce along with severely diminishing the quality of life for all involved. It is, therefore, highly desirable to develop a fast, effective and reliable sensor to enable early-stage detection in an attempt to reverse disease progression. This research validates the detection of amyloid-beta 42 (Aß42) using a Silicon Carbide (SiC) electrode, a fact that is unprecedented in the literature. Aß42 is considered a reliable biomarker for AD detection, as reported in previous studies. To validate the detection with a SiC-based electrochemical sensor, a gold (Au) electrode-based electrochemical sensor was used as a control. The same cleaning, functionalization and Aß1-28 antibody immobilization steps were used on both electrodes. Sensor validation was carried out by means of Cyclic Voltammetry (CV) and Electrochemical Impedance Spectroscopy (EIS) aiming to detect an 0.5 µg·mL-1 Aß42 concentration in 0.1 M buffer solution as a proof of concept. A repeatable peak directly related to the presence of Aß42 was observed, indicating that a fast SiC-based electrochemical sensor was constructed and may prove to be a useful approach for the early detection of AD.

Development of Heterojunction c-Si/a-Si1-xCx:H PIN Light-Emitting Diodes.

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si1-xCx:H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PIN+N structures, where a-Si1-xCx:H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device. The amorphous layers were deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at a substrate temperature of 200 °C. The PIN device presented electroluminescence (EL) only in the forward bias, while the PIN+N device presented in both the forward and reverse biases. The EL in reverse bias was possible due to the addition of an N+-type a-Si:H layer between the c-Si substrate and the I-type a-Si1-xCx:H active layer. Likewise, the EL intensity of the PIN+N structure was higher than that of the PIN device in forward bias, indicating that the addition of the N-type a-Si:H layer makes electrons flow more efficiently to the I layer. In addition, both devices presented red EL in the full area, which is observed with the naked eye.

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS.

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process.

In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural rearrangement of the amorphous matrix is carried out during the fast annealing process, which results in different degrees of oxidation on the a-Si1-xCx:H films. The PL peak position shifts towards higher energies as the temperature increases. The sample deposited with a silane/methane flux ratio of 37.5 at an Radio Frequency (RF) power of 6 W experiences an increase in PL intensity of more than nine times, with a displacement in the peak position from 2.5 eV to 2.87 eV, at 800 °C. From the PL analysis, we observe two emission bands: one centered in the near infrared and other in the visible range (with a blue peak). This study opens the possibility to use such thin films in the development of optoelectronics devices, with potential for application in solar cells.

Engineering Metal-spxy Dirac Bands on the Oxidized SiC Surface.

The ability to construct 2D systems, beyond materials' natural formation, enriches the search and control capability of new phenomena, for instance, the synthesis of topological lattices of vacancies on metal surfaces through scanning tunneling microscopy. In the present study, we demonstrate that metal atoms encaged in a silicate adlayer on silicon carbide is an interesting platform for lattice design, providing a ground to experimentally construct tight-binding models on an insulating substrate. Based on the density functional theory, we have characterized the energetic and electronic properties of 2D metal lattices embedded in the silica adlayer. We show that the characteristic band structures of those lattices are ruled by surface states induced by the metal-s orbitals coupled by the host-pxy states, giving rise to spxy Dirac bands neatly lying within the energy gap of the semiconductor substrate.

Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiC x:H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen.

Hydrogenated amorphous carbon thin films (a-C:H) have attracted much attention because of their surprising properties, including ultralow friction coefficients in specific conditions. Adhesion of a-C:H films on ferrous alloys is poor due to chemical and physical aspects, avoiding a widespread application of such a film. One possibility to overcome this drawback is depositing an interlayer-an intermediate thin film-between the carbon-based coating and the substrate to improve chemical interaction and adhesion. Based on this, interlayers play a key role on a-C:H thin-film adhesion through a better chemical network structure at the outermost layer of the a-SiC x:H interlayer, i.e., the a-C:H/a-SiC x:H interface. However, despite the latest important advances on the subject, the coating adhesion continues being a cumbersome problem since it depends on multifactorial causes. Thus, the purpose of this paper is to report a standard protocol leading to surprising good results based on the control of the interfacial chemical bonding by properly biasing the substrate (between 500 and 800 V) during the a-SiC x:H interlayer deposition at an appropriate low temperature, by using hexamethyldisiloxane as precursor. The interlayers and the outermost interfaces were analyzed by a comprehensive set of techniques, including X-ray photoelectron spectroscopy, glow discharge optical emission spectroscopy, and Fourier transform infrared spectroscopy. Nanoscratch tests, complemented by scanning electron microscopy and energy-dispersive X-ray spectroscopy, were used to evaluate the critical load for delamination to certify and quantify the adhesion improvement. This study was important to identify the chemical local bonding of the elements at the interface and its local environment, including the in-depth chemical composition profile of the coating. An important effect is that the oxygen content decreases on increasing substrate bias voltage, improving the adhesion of the film. This is due to the fact that energetic ion hitting the growing interlayer breaks Si-O and C-O bonds, augmenting the content of Si-C and C-C bonds at the outermost interface of the a-SiC x:H interlayer and enhancing the a-C:H coating adhesion. Moreover, the combination of high bias voltage (800 V) and low temperature (150 °C) during the a-SiC x:H interlayer deposition allows good adhesion of a-C:H thin films due to sputtering of light elements like oxygen. Therefore, an appropriated bias and temperature combination can open new pathways in a-C:H thin-film deposition at low temperatures. These results are particularly interesting for temperature-sensible metal alloys, where well-adhered a-C:H thin films are mandatory for tribological applications.

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering.

Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

Growth and Self-Assembly of Silicon⁻Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface.

This work describes the growth of silicon⁻silicon carbide nanoparticles (Si⁻SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Si⁻SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbon⁻silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed.

A Novel Method of Synthesizing Graphene for Electronic Device Applications.

This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

Microabrasion technique for enamel with fluorosis: a case report utilizing two distinct pastes / Técnicas de microabrasão no esmalte com fluorose: relato de caso clínico utilizando duas diferentes pastas

A técnica de microabrasão do esmalte é considerada uma alternativa conservadora e efetiva para remoção de manchas e irregularidades superficiais do esmalte e diferentes pastas podem ser usadas para essa finalidade. Objetivo: O objetivo desse estudo foi comparar a eficácia da técnica de microabrasão do esmalte com fluorose utilizando duas diferentes pastas. Material e Métodos: Paciente, gênero feminino, 18 anos de idade, foi submetida ao tratamento de microabrasão do esmalte, sendo que na arcada superior direita foi manipulada e aplicada a pasta à base de pedra-pomes (SSWhite) e ácido fosfórico a 37% (Alpha Etch, DFL) na proporção de 1:1 e na arcada superior esquerda uma pasta à base de ácido hidroclorídrico a 6,6% e óxido de silício (Micropol, DMC Equipamentos Ltda). Nas duas hemi-arcadas foi realizado o mesmo protocolo clínico por três vezes, sendo que a aplicação da pasta foi de 1 mm de espessura e a realização da microabrasão se deu por fricção mecânica com taça de borracha acoplada em baixa rotação por 10 s. Em seguida os dentes foram polidos com disco de feltro e pasta diamantada e aplicado flúor tópico APF 1,23% por 3 min. Resultados: Os resultados clínicos foram similares em ambas arcadas, independente da pasta utilizada. O sucesso na remoção de manchas no esmalte está dieretamente relacionada com o correto diagnóstico e a precisa indicação da técnica de microabrasão. Conclusões: Foi possível concluir que a as duas diferentes pastas utilizadas para a microabrasão do esmalte foram efetivas na remoção de machas intrínsecas por fluorose com resultados similares e com o restabelecimento estético dos dentes envolvidos.

The technique of enamel microabrasion is considered an aesthetic alternative conservative and effective for stain removal or surface irregularities of the enamel and different materials or pastes can be used for this purpose Objetives: The objective of this study was to compare the efficiency of the technique of enamel microabrasion using two different pastes at removing hypoplastic stains by fluorosis. Methods: The female patient, 18 years, was submitted to enamel microabrasion, and in the right half of the maxilla was manipulated in the proportion of 1:1 by volume a paste of pumice (SSWhite) and 37% phosphoric acid (Etch Alpha, DFL), and in the left half of the maxilla used paste based on hydrochloric acid and 6.6% silicon carbide (Micropol, DMC Equipment Ltd.). In both hemi-arches was performed the same clinical protocol and repeated three times, by the application of 1.0 mm thickness of paste and realized the enamel microabrasion through mechanical friction with rubber cup at low speed for 10 s. Then, the teeth were polished with felt disc and diamond paste, and topical fluoride APF 1.23% for 3 min was applied. Results: The clinical outcome was similar for both hemi-arches, regardless of the used technique. The success in removing stains on tooth enamel is directly related to a correct diagnosis and accurate indication of microabrasion technique. Conclusions: It can be concluded that the two pastes used in the enamel microabrasion were effective for removing intrinsic stains from fluorosis, with similar results and with the re-establishment of aesthetics of the teeth involved.