Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices.

The production of controlled doping in two-dimensional semiconductor materials is a challenging issue when introducing these systems into current and future technology. In some compounds, the coexistence of distinct crystallographic phases for a fixed composition introduces an additional degree of complexity for synthesis, chemical stability, and potential applications. In this work, we demonstrate that a multiphase In2Se3 layered semiconductor system, synthesized with three distinct structures─rhombohedral α and ß-In2Se3 and trigonal δ-In2Se3─exhibits chemical stability and well-behaved n-type doping. Scanning tunneling spectroscopy measurements reveal variations in the local electronic density of states among the In2Se3 structures, resulting in a compound system with electronic bandgaps that range from infrared to visible light. These characteristics make the layered In2Se3 system a promising candidate for multigap or broad spectral optical devices, such as detectors and solar cells. The ability to tune the electronic properties of In2Se3 through structural phase manipulation makes it ideal for integration into flexible electronics and the development of heterostructures with other materials.

Interfacial Energetic Level Mapping and Nano-Ordering of Small Molecule/Fullerene Organic Solar Cells by Scanning Tunneling Microscopy and Spectroscopy.

Using scanning tunneling microscopy (STM) and spectroscopy (STS) at the liquid/solid interface, morphology evolution process and energetic level alignment of very thin solid films (thickness: <700 pm), of the low molecular weight molecule DRCN5T and DRCN5T:[70]PCBM blend are analyzed after applying thermal annealing at different temperatures. These films exhibit a worm-like pattern without thermal annealing (amorphous shape); however, after applying thermal annealing at 120 °C, the small molecule film domains crystallize verified by X-ray diffraction: structural geometry becomes a well-defined organized array. By using STS, the energy band diagrams of the semiconductor bulk heterojunction (blended film) at the donor-acceptor interface are determined; morphology and energy characteristics can be correlated with the organic solar cells (OSC) performance. When combining thermal treatment and solvent vapor annealing processes as described in previous literature by using other techniques, OSC devices based on DRCN5T show a very acceptable power conversion efficiency of 9.0%.

Phase Separation of Dirac Electrons in Topological Insulators at the Spatial Limit.

In this work we present unique signatures manifested by the local electronic properties of the topological surface state in Bi2Te3 nanostructures as the spatial limit is approached. We concentrate on the pure nanoscale limit (nanoplatelets) with spatial electronic resolution down to 1 nm. The highlights include strong dependencies on nanoplatelet size: (1) observation of a phase separation of Dirac electrons whose length scale decreases as the spatial limit is approached, and (2) the evolution from heavily n-type to lightly n-type surface doping as nanoplatelet thickness increases. Our results show a new approach to tune the Dirac point together with reduction of electronic disorder in topological insulator (TI) nanostructured systems. We expect our work will provide a new route for application of these nanostructured Dirac systems in electronic devices.