Long-range Corrected Density Functional Theory Including a Two-Gaussian Hartree-Fock Operator for High Accuracy Core-excitation Energy Calculations of Both the Second- and Third-Row Atoms (LC2gau-core-BOP).

In the previous work, LCgau-core-BOP, which includes the short-range interelectronic Gaussian attenuating Hartree-Fock (HF) exchange to the long-range HF exchange, showed high accuracy core-excitation energies from 1s orbitals of the second-row atoms (1s → π*, 1s → σ*, 1s → n*, and 1s → Rydberg), but underestimates the core-excitation energies from 1s orbitals of the third-row atoms. To improve this, we added one more Gaussian attenuating HF exchange to LCgau-core-BOP. We named it LC2gau-core-BOP, which achieves a mean absolute error (MAE) of 0.6 and 0.3 eV for core excitation energies of the second- and third-row atoms of the tested small molecules, respectively. We found that the inclusion of the short-range interelectronic HF exchange at a distance ranging from 0.2 to 0.6 a.u. contributes to the increase of performances on 1s orbital energy calculations of the second-row atoms, while the inclusion of more short-range interelectronic HF exchange at a distance ranging from 0 to 0.2 a.u. does to the increase of performance on 1s orbital energy calculations of the third-row atoms. It is notable that all of these improvements were accomplished using flexible Gaussian attenuating HF exchange inclusion. LC2gau-core-BOP shows deviations of less than 0.8 eV from experimental values for all of the core-excitation energies of the tested medium-size molecules consisting of thymine, oxazole, glycine, and dibenzothiophene sulfone. Moreover, by optimizing one parameter of the OP correlation functional, LC2gau-core-BOP provides atomization energies over the G3 test set with an accuracy comparable to that of B3LYP.

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s.

Conventional DRAM, consisting of one transistor and one capacitor (1T1C), requires periodic data refresh processes due to its limited retention time and data-destructive read operation. Here, we propose and demonstrate a novel 3D-DRAM memory scheme available with a single transistor and a single ferroelectric field-effect transistor (FeFET) DRAM (2T0C-FeDRAM), which offers extended retention time and non-destructive read operation. This architecture uses a back-end-of-line (BEOL)-compatible amorphous oxide semiconductor (AOS) that is suitable for increasing DRAM cell density. Notably, the device structures of a double gate a-ITZO/a-IGZO FeFET, used for data storage and reading, are engineered to achieve an enlarged memory window (MW) of 1.5 V and a prolonged retention time of 104 s. This is accomplished by a double gate and an a-ITZO/a-IGZO heterostructure channel to enable efficient polarization control in hafnium-zirconium oxide (HZO) layers. We present successful program/erase operations of the double gate a-ITZO/a-IGZO FeFET through incremental step pulse programming (ISPP), demonstrating multi-level states with remarkable retention characteristics. Most importantly, we perform 2T0C-FeDRAM operations by electrically connecting the double gate a-ITZO/a-IGZO FeFET and the a-ITZO FET. Leveraging the impressive performance of the double gate a-ITZO/a-IGZO FeFET technology, we have effectively showcased an exceptionally record-long retention time exceeding 2000 s and 4-bit multi-level states, positioning it as a robust contender among emerging memory solutions in the era of artificial intelligence.

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III-V Quantum Dot Lasers on a Si Substrate.

Monolithic integration of III-V quantum dot (QD) lasers onto a Si substrate is a scalable and reliable approach for obtaining highly efficient light sources for Si photonics. Recently, a combination of optimized GaAs buffers and QD gain materials resulted in monolithically integrated butt-coupled lasers on Si. However, the use of thick GaAs buffers up to 3 µm not only hinders accurate vertical alignment to the Si optical waveguide but also imposes considerable growth costs and time constraints. Here, for the first time, we demonstrate InAs QD lasers epitaxially grown on a 700 nm thick GaAs/Si template, which is approximately four times thinner than the conventional III-V buffers on Si. The optimized 700 nm GaAs buffer yields a remarkably smooth surface and low threading dislocation density of 4 × 108 cm-2, which is sufficient for QD laser growth. The InAs QD lasers fabricated on these ultrathin templates still lase at room temperature with a threshold current density of 661 A/cm2 and a characteristic temperature of 50 K. We believe that these results are important for the monolithically integrated III-V QD lasers for Si photonics applications.

Low-threshold 2†µm InAs/InP quantum dash lasers enabled by punctuated growth.

2 µm photonics and optoelectronics is promising for potential applications such as optical communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on the rise, the development of InP-based 2 µm gain materials with 0D nanostructures is rather stalled. Here, we demonstrate low-threshold, continuous wave lasing at 2 µm wavelength from InAs quantum dash/InP lasers enabled by punctuated growth of the quantum structure. We demonstrate low threshold current densities from the 7.1 µm width ridge-waveguide lasers, with values of 657, 1183, and 1944 A/cm2 under short pulse wave (SPW), quasi-continuous wave (QCW), and continuous wave operation. The lasers also exhibited good thermal stability, with a characteristic temperature T0 of 43 K under SPW mode. The lasing spectra is centered at 1.97 µm, coinciding with the ground-state emission observed from photoluminescence studies. We believe that the InAs quantum dash/InP lasers emitting near 2 µm will be a key enabling technology for 2 µm communication and sensing.

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays.

We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.

Enhanced Photoluminescence of 1.3 µm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission.

We report on the photoluminescence enhancement of 1.3 µm InAs quantum dots (QDs) epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs buffer thickness from 1000 to 250 nm was found to not only increase the coalesced QD density from 6.5 × 108 to 1.9 × 109 cm-2 but also decrease the QD photoluminescence emission intensity dramatically. Inserting an Al0.4Ga0.6As potential barrier layer maintained strong photoluminescence from the QDs by effectively suppressing carrier leakage to the GaAs/Si interfacial region even when the GaAs buffer was thinned to 250 nm. We then fabricated a light-emitting diode using the ultrathin 250 nm GaAs buffer on Si and confirmed strong electroluminescence peaking at 1.28 µm without interfacial defect emission at room temperature. We believe that this work is promising for monolithically integrated evanescent Si lasers using InAs/GaAs QDs.

Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing.

A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong stimulus for synaptic update because of their inefficient hot-carrier injection into the charge trapping layer, consequently causing a slow speed operation and large power consumption. Here, we propose a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET). Our synaptic TFETs present superior subthreshold swing and improved charge trapping ability utilizing both carriers as charge trapping sources: hot holes created by impact ionization in the narrow bandgap InGaAs after being provided from the p+-source, and band-to-band tunneling hot electrons (BBHEs) generated at the abrupt p+n junctions in the TFETs. Thanks to these advances, our devices achieved outstanding efficiency in synaptic characteristics with a 5750 times faster synaptic update speed and 51 times lower sub-fJ/um2 energy consumption per single synaptic update in comparison to the MOSFET-based synapse. An artificial neural network (ANN) simulation also confirmed a high recognition accuracy of handwritten digits up to ∼90% in a multilayer perceptron neural network based on our synaptic devices.

Tetraphenylethene-based fluorescent probe with aggregation-induced emission behavior for Hg2+ detection and its application.

A tetraphenylethene (TPE) derivative was designed and synthesized upon conjugation with bis(thiophen-2-ylmethyl) amine (BTA) containing a mercury-binding moiety and further characterized by using Nuclear magnetic resonance (NMR), LC-MS, UV-Vis, and fluorescence spectroscopic methods. The resulting TPE-BTA exhibited comprehensive aggregation-induced emission while expressing a high quantum yield and emission intensity at 70% water fraction. The probe exhibited a good photochromic effect with a Stokes shift of 178 nm, and the emission intensity at 550 nm increased considerably with the color turning from dark green to bright green under a UV lamp upon the addition of 5 µM Hg2+. The lowest-energy conformation of the probe showed that two thiophene rings were perpendicular to the phenyl ring, while two BTA molecules were situated in a staggered form to each other. The sulfur and nitrogen atoms present in TPE-BTA were coordinated to the Hg2+ ion, and these binding sites were confirmed by the NMR parameters, X-ray photoelectron spectroscopy signals, and structural calculations. The binding of Hg2+ to TPE-BTA was believed to restrict the intramolecular motion of TPE-BTA, thus inducing it to shine brighter according to the unique aggregation-induced emission effect. The concentration of Hg2+ was determined based on the enhancement of the emission intensity, and the present probe showed an extremely high sensitivity with a limit of detection of 10.5 nM. Furthermore, TPE-BTA enabled selective detection of Hg2+ even in the presence of a 1000-fold excess of other interfering metal ions. The proposed method was successfully employed to determine Hg2+ in living HeLa cells and real water samples.

Assessment of long-range corrected density functional theory on the absorption and vibrationally resolved fluorescence spectrum of carbon nanobelts.

Time-dependent (TD) density functional theory (DFT) and Franck-Condon Hertzberg-Teller (FCHT) calculations of various DFT functionals [B3LYP, CAM-B3LYP, ωB97XD, and optimally tuned (OT) long-range corrected (LC)-BLYP] were performed to examine how well DFT functionals can predict the experimental absorption and fluorescence spectra of a 12-carbon nanobelt (CNB). OT-LC-BLYP reproduced the experimental absorption spectrum well in terms of the peak position and intensity in the case of using a basis set with a diffuse function, such as 6-31+G(d,p) and 6-311+G(d,p), whereas B3LYP showed a red-shift in the peak positions and CAM-B3LYP and ωB97XD, which have a long-range HF exchange, showed blue shifts. Regarding the fluorescence spectrum calculations with FCHT using 6-311+G(d,p), the OT-LC-BLYP reproduced both the peak intensities and positions closest to the experimental spectrum. B3LYP, however, showed red-shifted peaks, and ωB97XD showed blue-shifted peaks. CAM-B3LYP provided less blue-shifted peaks, but the relative peak intensities mismatched the experimental ones. Furthermore, calculations of the absorption and vibrationally resolved fluorescence spectra of 16-CNB and 24-CNB using OT-LC-BLYP/6-311+G(d,p) showed absorption and fluorescence spectra close to the experimental spectra with high accuracy. Moreover, the application of a polarizable continuum model (dichloromethane) produced a red shift in the peak positions of the absorption spectrum with increasing intensity but an increase in the peak intensities of the fluorescence calculations without shifting the peak position.

Peptoid-Conjugated Magnetic Field-Sensitive Exciplex System at High and Low Solvent Polarities.

The magnetic field effect (MFE) in exciplex emission (ExE) has been studied for decades, but it has been observed to occur only in solvents with a limited range of polarity. This limitation is mainly due to the reversible interconversion collapse between two quenching products of the photoinduced electron transfer, the exciplex and magnetic field-sensitive radical ion pair (RIP) beyond that polarity range. In a nonpolar solvent, the formation of RIPs is suppressed, whereas in a polar solvent, the probability of their re-encounter forming the exciplexes decreases. In this study, we developed new exciplex-forming (phenyl-phenanthrene)-(phenyl-N,N-dimethylaniline)-peptoid conjugates (PhD-PCs) to overcome this limitation. The well-defined peptoid structure allows precise control of the distance and the relative orientation between two conjugated moieties. Steady-state and time-resolved spectroscopic data indicate that the PhD-PCs can maintain the reversibility, which allows MFEs in ExE regardless of the solvent polarity. Subtle differences between the ExEs of the PhD-PCs were observed and explained by their exciplex geometries obtained through time-dependent density functional theory (TD-DFT) calculations.

Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes.

Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe2/MoS2 p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10-5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe2/MoS2 p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.

Predicting whether aromatic molecules would prefer to enter a carbon nanotube: A density functional theory study.

The interaction of a carbon nanotube (CNT) with various aromatic molecules, such as aniline, benzophenone, and diphenylamine, was studied using density functional theory able to compute intermolecular weak interactions (B3LYP-D3). CNTs of varying lengths were used, such as 4-CNT, 6-CNT, and 8-CNT (the numbers denoting relative lengths), with the lengths being chosen appropriately to save computation times. All aromatic molecules were found to exhibit strong intermolecular binding energies with the inner surface of the CNT, rather than the outer surface. Hydrogen bonding between two aromatic molecules that include N and O atoms is shown to further stabilize the intermolecular adsorption process. Therefore, when benzophenone and diphenylamine were simultaneously allowed to interact with a CNT, the aromatic molecules were expected to preferably enter the CNT. Furthermore, additional calculations of the intermolecular adsorption energy for aniline adsorbed on a graphene surface showed that the concavity of graphene-like carbon sheet is in proportion to the intermolecular binding energy between the graphene-like carbon sheet and the aromatic molecule.

Importance of van der Waals Descriptions on Accurate Isomerization Energy Calculations of Thiourea Compounds: LCgau-BOP+LRD Method.

We have previously reported that, whereas conventional density functional theory (DFT) functionals have provided poor calculations on the alkane isodesmic reaction energy and isomerization reaction energy of organic molecules that include C, N, and O atoms, our developed long-range corrected (LC)- and LC including Gaussian attenuation (LCgau)-DFT + local response dispersion (LRD) functionals, which can accurately calculate inter- and intramolecular weak interactions, give accurate isomerization energies on these reactions. In this work, we found that B3LYP-D3, LC-ωPBE-D3, and ωB97XD, known for their good descriptions of weak interaction calculations, fail to reproduce the isomerization reaction energies of the molecules that include the S atom, such as methyl-thiourea, ethyl-thiourea, and propyl-thiourea. In contrast, LC- and LCgau-BOP+LRD functionals provide isomerization reaction energies that are very close to those produced by highly accurate wave function methods. These results show that an accurate description of the intramolecular weak interaction between the alkyl group and the S atom, unlike in the case of urea, is significant to reproduce the correct energy of the molecules with an alkyl group and S atom.