Accurate X-ray diffraction data required for proper evaluation of bond valence sums and global instability indexes: redetermination of the crystal structures of diamond-like Cu2CdSiS4 and Cu2HgSnS4 as a case study.

Our calculations of the global instability index (G) values for some diamond-like materials with the general formula I2-II-IV-VI4 have indicated that the structures may be unstable or incorrectly determined. To compute the G value of a given compound, the bond valence sums (BVSs) must first be calculated using a crystal structure. Two examples of compounds with high G values, based on data from the literature, are the wurtz-stannite-type dicopper cadmium silicon tetrasulfide (Cu2CdSiS4) and the stannite-type dicopper mercury tin tetrasulfide (Cu2HgSnS4), which were first reported in 1967 and 1965, respectively. In the present study, Cu2CdSiS4 and Cu2HgSnS4 were prepared by solid-state synthesis at 1000 and 900 °C, respectively. The phase purity was assessed by powder X-ray diffraction. Optical diffuse reflectance UV/Vis/NIR spectroscopy was used to estimate the optical bandgaps of 2.52 and 0.83 eV for Cu2CdSiS4 and Cu2HgSnS4, respectively. The structures were solved and refined using single-crystal X-ray diffraction data. The structure type of Cu2CdSiS4 was confirmed, where Cd2+, Si4+ and two of the three crystallographically unique S2- ions lie on a mirror plane. The structure type of Cu2HgSnS4 was also verified, where all ions lie on special positions. The S2- ion resides on a mirror plane, the Cu+ ion is situated on a fourfold rotary inversion axis and both the Hg2+ and the Sn4+ ions are located on the intersection of a fourfold rotary inversion axis, a mirror plane and a twofold rotation axis. Using the crystal structures solved and refined here, the G values were reassessed and found to be in the range that indicates reasonable strain for a stable crystal structure. This work, together with some examples gathered from the literature, shows that accurate data collected on modern instrumentation should be used to reliably calculate BVSs and G values.

Multifunctional Cu2TSiS4 (T = Mn and Fe): Polar Semiconducting Antiferromagnets with Nonlinear Optical Properties.

Cu2TSiS4 (T = Mn and Fe) polycrystalline and single-crystal materials were prepared with high-temperature solid-state and chemical vapor transport methods, respectively. The polar crystal structure (space group Pmn21) consists of chains of corner-sharing and distorted CuS4, Mn/FeS4, and SiS4 tetrahedra, which is confirmed by Rietveld refinement using neutron powder diffraction data, X-ray single-crystal refinement, electron diffraction, energy-dispersive X-ray spectroscopy, and second harmonic generation (SHG) techniques. Magnetic measurements indicate that both compounds order antiferromagnetically at 8 and 14 K, respectively, which is supported by the temperature-dependent (100-2 K) neutron powder diffraction data. Additional magnetic reflections observed at 2 K can be modeled by magnetic propagation vectors k = (1/2,0,1/2) and k = (1/2,1/2,1/2) for Cu2MnSiS4 and Cu2FeSiS4, respectively. The refined antiferromagnetic structure reveals that the Mn/Fe spins are canted away from the ac plane by about 14°, with the total magnetic moments of Mn and Fe being 4.1(1) and 2.9(1) µB, respectively. Both compounds exhibit an SHG response with relatively modest second-order nonlinear susceptibilities. Density functional theory calculations are used to describe the electronic band structures.

Crystal structure, electronic structure, and optical properties of the novel Li4CdGe2S7, a wide-bandgap quaternary sulfide with a polar structure derived from lonsdaleite.

The novel quaternary thiogermanate Li4CdGe2S7 (tetralithium cadmium digermanium heptasulfide) was discovered from a solid-state reaction at 750 °C. Single-crystal X-ray diffraction data were collected and used to solve and refine the structure. Li4CdGe2S7 is a member of the small, but growing, class of I4-II-IV2-VI7 diamond-like materials. The compound adopts the Cu5Si2S7 structure type, which is a derivative of lonsdaleite. Crystallizing in the polar space group Cc, Li4CdGe2S7 contains 14 crystallographically unique ions, all residing on general positions. Like all diamond-like structures, the compound is built of corner-sharing tetrahedral units that create a relatively dense three-dimensional assembly. The title compound is the major phase of the reaction product, as evidenced by powder X-ray diffraction and optical diffuse reflectance spectroscopy. While the compound exhibits a second-harmonic generation (SHG) response comparable to that of the AgGaS2 (AGS) reference material in the IR region, its laser-induced damage threshold (LIDT) is over an order of magnitude greater than AGS for λ = 1.064 µm and τ = 30 ps. Bond valence sums, global instability index, minimum bounding ellipsoid (MBE) analysis, and electronic structure calculations using density functional theory (DFT) were used to further evaluate the crystal structure and electronic structure of the compound and provide a comparison with the analogous I2-II-IV-VI4 diamond-like compound Li2CdGeS4. Li4CdGe2S7 appears to be a better IR nonlinear optical (NLO) candidate than Li2CdGeS4 and one of the most promising contenders to date. The exceptional LIDT is likely due, at least in part, to the wider optical bandgap of ∼3.6 eV.

Cu4MnGe2S7 and Cu2MnGeS4: two polar thiogermanates exhibiting second harmonic generation in the infrared and structures derived from hexagonal diamond.

The new, quaternary diamond-like semiconductor (DLS) Cu4MnGe2S7 was prepared at high-temperature from a stoichiometric reaction of the elements under vacuum. Single crystal X-ray diffraction data were used to solve and refine the structure in the polar space group Cc. Cu4MnGe2S7 features [Ge2S7]6- units and adopts the Cu5Si2S7 structure type that can be considered a derivative of the hexagonal diamond structure. The DLS Cu2MnGeS4 with the wurtz-stannite structure was similarly prepared at a lower temperature. The achievement of relatively phase-pure samples, confirmed by X-ray powder diffraction data, was nontrival as differential thermal analysis shows an incongruent melting behaviour for both compounds at relatively high temperature. The dark red Cu2MnGeS4 and Cu4MnGe2S7 compounds exhibit direct optical bandgaps of 2.21 and 1.98 eV, respectively. The infrared (IR) spectra indicate potentially wide windows of optical transparency up to 25 µm for both materials. Using the Kurtz-Perry powder method, the second-order nonlinear optical susceptibility, χ(2), values for Cu2MnGeS4 and Cu4MnGe2S7 were estimated to be 16.9 ± 2.0 pm V-1 and 2.33 ± 0.86 pm V-1, respectively, by comparing with an optical-quality standard reference material, AgGaSe2 (AGSe). Cu2MnGeS4 was found to be phase matchable at λ = 3100 nm, whereas Cu4MnGe2S7 was determined to be non-phase matchable at λ = 1600 nm. The weak SHG response of Cu4MnGe2S7 precluded phase-matching studies at longer wavelengths. The laser-induced damage threshold (LIDT) for Cu2MnGeS4 was estimated to be ∼0.1 GW cm-2 at λ = 1064 nm (pulse width: τ = 30 ps), while the LIDT for Cu4MnGe2S7 could not be ascertained due to its weak response. The significant variance in NLO properties can be reasoned using the results from electronic structure calculations.

Synthesis, crystal structure, and electronic structure of Li2PbSiS4: a quaternary thiosilicate with a compressed chalcopyrite-like structure.

The new quaternary thiosilicate, Li2PbSiS4 (dilithium lead silicon tetrasulfide), was prepared in an evacuated fused-silica tube via high-temperature, solid-state synthesis at 800 °C, followed by slow cooling. The crystal structure was solved and refined using single-crystal X-ray diffraction data. By strict definition, the title compound crystallizes in the stannite structure type; however, this type of structure can also be described as a compressed chalcopyrite-like structure. The Li+ cation lies on a crystallographic fourfold rotoinversion axis, while the Pb2+ and Si4+ cations reside at the intersection of the fourfold rotoinversion axis with a twofold axis and a mirror plane. The Li+ and Si4+ cations in this structure are tetrahedrally coordinated, while the larger Pb2+ cation adopts a distorted eight-coordinate dodecahedral coordination. These units join together via corner- and edge-sharing to create a dense, three-dimensional structure. Powder X-ray diffraction indicates that the title compound is the major phase of the reaction product. Electronic structure calculations, performed using the full potential linearized augmented plane wave method within density functional theory (DFT), indicate that Li2PbSiS4 is a semiconductor with an indirect bandgap of 2.22 eV, which compares well with the measured optical bandgap of 2.51 eV. The noncentrosymmetric crystal structure and relatively wide bandgap designate this compound to be of interest for IR nonlinear optics.

Syntheses and crystal structures of the quaternary thio-germanates Cu4FeGe2S7 and Cu4CoGe2S7.

The quaternary thio-germanates Cu4FeGe2S7 (tetra-copper iron digermanium hepta-sulfide) and Cu4CoGe2S7 (tetra-copper cobalt digermanium hepta-sulfide) were prepared in evacuated fused-silica ampoules via high-temperature, solid-state synthesis using stoichiometric amounts of the elements at 1273 K. These isostructural compounds crystallize in the Cu4NiSi2S7 structure type, which can be considered as a superstructure of cubic diamond or sphalerite. The monovalent (Cu+), divalent (Fe2+ or Co2+) and tetra-valent (Ge4+) cations adopt tetra-hedral geometries, each being surrounded by four S2- anions. The divalent cation and one of the sulfide ions lie on crystallographic twofold axes. These tetra-hedra share corners to create a three-dimensional framework structure. All of the tetra-hedra align along the same crystallographic direction, rendering the structure non-centrosymmetric and polar (space group C2). Analysis of X-ray powder diffraction data revealed that the structures are the major phase of the reaction products. Thermal analysis indicated relatively high melting temperatures, near 1273 K.

Insights on the Synthesis, Crystal and Electronic Structures, and Optical and Thermoelectric Properties of Sr1- xSb xHfSe3 Orthorhombic Perovskite.

Single-phase polycrystalline powders of Sr1- xSb xHfSe3 ( x = 0, 0.005, 0.01), a new member of the chalcogenide perovskites, were synthesized using a combination of high temperature solid-state reaction and mechanical alloying approaches. Structural analysis using single-crystal as well as powder X-ray diffraction revealed that the synthesized materials are isostructural with SrZrSe3, crystallizing in the orthorhombic space group Pnma (#62) with lattice parameters a = 8.901(2) Å; b = 3.943(1) Å; c = 14.480(3) Å; and Z = 4 for the x = 0 composition. Thermal conductivity data of SrHfSe3 revealed low values ranging from 0.9 to 1.3 W m-1 K-1 from 300 to 700 K, which is further lowered to 0.77 W m-1 K-1 by doping with 1 mol % Sb for Sr. Electronic property measurements indicate that the compound is quite insulating with an electrical conductivity of 2.9 S/cm at 873 K, which was improved to 6.7 S/cm by 0.5 mol % Sb doping. Thermopower data revealed that SrHfSe3 is a p-type semiconductor with thermopower values reaching a maximum of 287 µV/K at 873 K for the 1.0 mol % Sb sample. The optical band gap of Sr1- xSb xHfSe3 samples, as determined by density functional theory calculations and the diffuse reflectance method, is ∼1.00 eV and increases with Sb concentration to 1.15 eV. Careful analysis of the partial densities of states (PDOS) indicates that the band gap in SrHfSe3 is essentially determined by the Se-4p and Hf-5d orbitals with little to no contribution from Sr atoms. Typically, band edges of p- and d-character are a good indication of potentially strong absorption coefficient due to the high density of states of the localized p and d orbitals. This points to potential application of SrHfSe3 as absorbing layer in photovoltaic devices.

Correction: Infrared nonlinear optical properties of lithium-containing diamond-like semiconductors Li2ZnGeSe4 and Li2ZnSnSe4.

Correction for 'Infrared nonlinear optical properties of lithium-containing diamond-like semiconductors Li2ZnGeSe4 and Li2ZnSnSe4' by Jian-Han Zhang et al., Dalton Trans., 2015, 44, 11212-11222.

Infrared nonlinear optical properties of lithium-containing diamond-like semiconductors Li2ZnGeSe4 and Li2ZnSnSe4.

Two new lithium-containing diamond-like semiconductors, Li2ZnGeSe4 and Li2ZnSnSe4, have been prepared by high-temperature, solid-state synthesis. Single crystal X-ray diffraction reveals that both compounds adopt the wurtz-kesterite structure type, crystallizing in the noncentrosymmetric space group Pn. X-ray powder diffraction coupled with Rietveld refinement indicates the high degree of phase purity in which the materials are prepared. Both compounds display optical bandgaps around 1.8 eV, wide optical transparency windows from 0.7 to 25 µm and type-I phase matched second harmonic generation starting at 2500 nm and persisting deeper into the infrared. Using the Kurtz powder method, the second-order nonlinear optical coefficient, χ((2)), was estimated to be 19 and 23 pm V(-1) for Li2ZnGeSe4 and Li2ZnSnSe4, respectively. Using a 1064 nm incident laser beam with a pulse width (τ) of 30 ps both compounds exhibit a laser damage threshold of 0.3 GW cm(-2), which is higher than that of the AgGaSe2 reference material measured under identical conditions. Differential thermal analysis shows that the title compounds are stable up to 684 and 736 °C, respectively. These properties collectively demonstrate that Li2ZnGeSe4 and Li2ZnSnSe4 have great potential for applications in tunable laser systems, especially in the infrared and even up to the terahertz regime. Electronic structure calculations using a plane-wave pseudopotential method within density functional theory provide insight regarding the nature of the bandgap and bonding.

Outstanding laser damage threshold in Li2MnGeS4 and tunable optical nonlinearity in diamond-like semiconductors.

The new Li2MnGeS4 and Li2CoSnS4 compounds result from employing a rational and simple design strategy that guides the discovery of diamond-like semiconductors (DLSs) with wide regions of optical transparency, high laser damage threshold, and efficient second-order optical nonlinearity. Single-crystal X-ray diffraction was used to solve and refine the crystal structures of Li2MnGeS4 and Li2CoSnS4, which crystallize in the noncentrosymmetric space groups Pna21 and Pn, respectively. Synchrotron X-ray powder diffraction (SXRPD) was used to assess the phase purity, and diffuse reflectance UV-vis-NIR spectroscopy was used to estimate the bandgaps of Li2MnGeS4 (Eg = 3.069(3) eV) and Li2CoSnS4 (Eg = 2.421(3) eV). In comparison with Li2FeGeS4, Li2FeSnS4, and Li2CoSnS4 DLSs, Li2MnGeS4 exhibits the widest region of optical transparency (0.60-25 µm) and phase matchability (≥1.6 µm). All four of the DLSs exhibit second-harmonic generation and are compared with the benchmark NLO material, AgGaSe2. Most remarkably, Li2MnGeS4 does not undergo two- or three-photon absorption upon exposure to a fundamental Nd:YAG beam (λ = 1.064 µm) and exhibits a laser damage threshold > 16 GW/cm(2).

Field-induced spin-flop in antiferromagnetic semiconductors with commensurate and incommensurate magnetic structures: Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS).

Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS), which are among the first magnetic semiconductors with the wurtz-kesterite structure, exhibit antiferromagnetism with TN ≈ 6 and 4 K, respectively. Both compounds undergo a conventional metamagnetic transition that is accompanied by a hysteresis; a reversible spin-flop transition is dominant. On the basis of constant-wavelength neutron powder diffraction data, we propose that LIGS and LITS exhibit collinear magnetic structures that are commensurate and incommensurate with propagation vectors km = [1/2, 1/2, 1/2] and [0, 0, 0.546(1)], respectively. The two compounds exhibit similar magnetic phase diagrams, as the critical fields are temperature-dependent. The nuclear structures of the bulk powder samples were verified using time-of-flight neutron powder diffraction along with synchrotron X-ray powder diffraction. (57)Fe and (119)Sn Mössbauer spectroscopy confirmed the presence of Fe(2+) and Sn(4+) as well as the number of crystallographically unique positions. LIGS and LITS are semiconductors with indirect and direct bandgaps of 1.42 and 1.86 eV, respectively, according to optical diffuse-reflectance UV-vis-NIR spectroscopy.

Optical nonlinearity in Cu2CdSnS4 and α/ß-Cu2ZnSiS4: diamond-like semiconductors with high laser-damage thresholds.

Cu2CdSnS4 and α/ß-Cu2ZnSiS4 meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu2CdSnS4 and α/ß-Cu2ZnSiS4 display wide ranges of optical transparency, 1.4-25 and 0.7-25 µm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu2CdSnS4 is 0.2 GW/cm(2), whereas α/ß-Cu2ZnSiS4 has a LDT of 2.0 GW/cm(2) for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.

Suppression of antiferromagnetic interactions through Cu vacancies in Mn-substituted CuInSe2 chalcopyrites.

Stoichiometric and Cu-poor Cu(0.95-x)Mn(0.05)InSe(2) (x = 0-0.20) compounds were synthesized by high-temperature, solid-state reactions. The presence of copper vacancies is revealed by Rietveld refinements of combined neutron and x-ray powder diffraction data. The antiferromagnetic interaction is depressed by the copper deficiency, which may be explained as the competition between the antiferromagnetic Mn-Se-Mn superexchange interaction and the hole-mediated ferromagnetic exchange induced by the copper vacancy. The introduction of copper vacancies is proposed to be a viable route to impart carrier-mediated ferromagnetic exchange in the chalcopyrite-based dilute magnetic semiconductors.

Cu(2)ZnSiS(4).

Single crystals of Cu(2)ZnSiS(4), dicopper(I) zinc silicon tetrasulfide, have been prepared via high-temperature solid-state synthesis. Cu(2)ZnSiS(4) was found to have the wurtz-stannite structure type, like that of Li(2)CdGeS(4), Li(2)CdSnS(4), and Cu(2)CdSiS(4). Each sulfur anion is tetra-hedrally coordinated by two Cu cations, one Si cation, and one Zn cation, forming a three-dimensional honeycomb structure. When viewed along the c axis, the atoms are aligned in rows in which each cation alternates with the sulfur anions.

Bis[2,2'-(2-amino-ethyl-imino)-di(ethyl-ammonium)] di-µ-sulfido-bis[disulfido-stannate(IV)].

The asymmetric unit of the title compound, (C(6)H(20)N(4))(2)[Sn(2)S(6)], comprises half of a [Sn(2)S(6)](4-) anion and a diprotonated tris-(2-amino-eth-yl)amine cation. The anion lies on an inversion center, while the atoms of the cation occupy general positions. An intra-molecular N-H⋯N hydrogen bond is observed in the cation. In the crystal, strong N-H⋯S hydrogen bonding between the terminal sulfur atoms of the anion and the protonated amine N atoms of the cations result in a three-dimensional network.

Second-harmonic generation and crystal structure of the diamond-like semiconductors Li(2)CdGeS(4) and Li(2)CdSnS(4).

The semiconductors Li(2)CdGeS(4) and Li(2)CdSnS(4), which are of interest for their nonlinear optical properties, were synthesized using high-temperature solid-state and polychalcogenide flux syntheses. Both compounds were found to crystallize in Pmn2(1), with R1 (for all data) = 1.93% and 1.86% for Li(2)CdGeS(4) and Li(2)CdSnS(4), respectively. The structures of both compounds are diamond-like with the tetrahedra pointing in the same direction along the c axis. The alignment of the tetrahedra results in the structure lacking an inversion center, a prerequisite for second-harmonic generation (SHG). A modified Kurtz nonlinear optical powder technique was used to determine the SHG responses of both compounds. Li(2)CdGeS(4) displayed a type I phase-matchable response of approximately 70x alpha-quartz, while Li(2)CdSnS(4) displayed a type I non-phase-matchable response of approximately 100x alpha-quartz. Diffuse-reflectance spectroscopy was used to determine band gaps of 3.10 and 3.26 eV for Li(2)CdGeS(4) and Li(2)CdSnS(4), respectively.

Alkenenitriles: conjugate additions of alkyl iodides with a silica-supported zinc-copper matrix in water.

A new silica-supported zinc-copper matrix reagent promotes the conjugate addition of alkyl iodides to cyclic and acyclic alkenenitriles in water. X-ray diffraction and electron microscopy techniques suggest that the active copper species generated from elemental zinc and copper(I) iodide is finely dispersed, zerovalent copper. Alkyl iodides react with the silica-supported reagent to generate putative radicaloid intermediates that efficiently add to alkenenitriles to provide beta-substituted nitriles. Conjugate additions to acyclic and cyclic 5-7-membered alkenenitriles are most effective for primary alkyliodides, although secondary and tertiary alkyliodides are viable reaction partners. The strategy addresses the challenge of performing conjugate additions to disubstituted alkenenitriles and demonstrates the beneficial role of the silica-supported reagent.

Phase transitions and second-harmonic generation in sodium monothiophosphate.

Oxythiophosphate compounds, which contain anions comprised of oxidized phosphorus bound to oxygen and sulfur, are scarce and, in general, poorly characterized. Although alpha-Na3PO3S has been known for over 60 years, little has been revealed about this compound. Here we present thermal analysis and second-harmonic-generation (SHG) efficiency of alpha-Na3PO3S. Details about its transformation to the high-temperature beta phase are discussed. Under vacuum, alpha-Na3PO3S undergoes one endothermic event at 553 degrees C upon heating and two exothermic events at 504 and 467 degrees C upon cooling. beta-Na3PO3S can be trapped upon quenching Na3PO3S from high temperature. We have observed that the beta phase converts back to the alpha phase at room temperature. Interestingly, relative humidity has been determined to catalyze this phase transformation. alpha-Na3PO3S oxidizes at 315 degrees C in air to produce Na4P2O7 and Na2SO4. Upon exposure to 1064-nm incident radiation, noncentrosymmetric alpha-Na3PO3S produces an SHG efficiency 200 times that of alpha-quartz and is nonphase-matchable (type 1).

Interwoven pair of open frameworks in the thiosphosphate K6Yb3(PS4)5.

K6Yb3(PS4)5 possesses two identical but interlocked three-dimensional frameworks. Each framework is realized by having Yb3+ atoms adopt both octahedral and trigonal prismatic sulfur coordination.

Toward an arsenic analogue of Hittorf's phosphorus: mixed pnicogen chains in Cu(2)P(1.8)As(1.2)I(2).

The new compound Cu(2)P(1.8)As(1.2)I(2), with neutral, mixed pnicogen chains, has been synthesized from a stoichiometric combination of CuI, P, and As heated in vacuo at 550 degrees C. Cu(2)P(1.8)As(1.2)I(2) represents substitution of 40% of P in Cu(2)P(3)I(2) by As, with the As predominantly occupying "roof" positions in the tubular chains. The mixed pnicogen modification demonstrates increased stability (T(d) = 330 degrees C) relative to Cu(2)P(3)I(2) (T(d) = 290 degrees C) but a similar optical band gap (E(g) approximately 1.2 eV). Crystallographic data: Cu(2)P(1.8)As(1.2)I(2), monoclinic P2(1)/c, a = 15.477(3) A, b = 13.200(3) A, c = 15.421(3) A, beta = 115.406(4) degrees, Z = 16 (T = 293 K).