RESUMEN
In this work, we study multiple epitaxial layer structures incorporating a resonant tunneling diode photodetector utilizing the In0.53Ga0.47As/InP material system for operation at the near-infrared region of 1.55 and 1.31 micrometers. We study the photodetection speed of response for these devices and the physical limitations affecting their bandwidth. We show that resonant tunneling diode-based photodetectors have bandwidth limitations due to the charge accumulation near the barriers and report on an operating bandwidth reaching up to 1.75â GHz in particular structures, which is the highest number reported for such detectors to the authors' best knowledge.
RESUMEN
We investigate the dynamic behaviour of resonant tunneling diode-photodetectors (RTD-PDs) in which the excitability can be activated by either electrical noise or optical signals. In both cases, we find the characteristics of the stochastic spiking behavior are not only dependent on the biasing positions but also controlled by the intensity of the input perturbations. Additionally, we explore the ability of RTD-PDs to perform optical signal transmission and neuromorphic spike generation simultaneously. These versatile functions indicate the possibility of making use of RTD-PDs for innovative applications, such as optoelectronic neuromorphic circuits for spike-encoded signaling and data processing.
RESUMEN
We report on the direct intensity modulation characteristics of a high-speed resonant tunneling diode-photodetector (RTD-PD) with an oscillation frequency of 79 GHz. This work demonstrates both electrical and optical modulation and shows that RTD-PD oscillators can be utilized as versatile optoelectronic/radio interfaces. This is the first demonstration of optical modulation of an RF carrier using integrated RTD-PD oscillators at microwave frequencies.
