Mathematical modeling and dynamics of immunological exhaustion caused by measles transmissibility interaction with HIV host.

This paper mainly addressed the study of the transmission dynamics of infectious diseases and analysed the effect of two different types of viruses simultaneously that cause immunodeficiency in the host. The two infectious diseases that often spread in the populace are HIV and measles. The interaction between measles and HIV can cause severe illness and even fatal patient cases. The effects of the measles virus on the host with HIV infection are studied using a mathematical model and their dynamics. Analysing the dynamics of infectious diseases in communities requires the use of mathematical models. Decisions about public health policy are influenced by mathematical modeling, which sheds light on the efficacy of various control measures, immunization plans, and interventions. We build a mathematical model for disease spread through vertical and horizontal human population transmission, including six coupled nonlinear differential equations with logistic growth. The fundamental reproduction number is examined, which serves as a cutoff point for determining the degree to which a disease will persist or die. We look at the various disease equilibrium points and investigate the regional stability of the disease-free and endemic equilibrium points in the feasible region of the epidemic model. Concurrently, the global stability of the equilibrium points is investigated using the Lyapunov functional approach. Finally, the Runge-Kutta method is utilised for numerical simulation, and graphic illustrations are used to evaluate the impact of different factors on the spread of the illness. Critical factors that effect the dynamics of disease transmission and greatly affect the rate and range of the disease's spread in the population have been determined through a thorough analysis. These factors are crucial in determining the expansion of the disease.

Design and Simulation of Efficient SnS-Based Solar Cell Using Spiro-OMeTAD as Hole Transport Layer.

In the present paper, the theoretical investigation of the device structure ITO/CeO2/SnS/Spiro-OMeTAD/Mo of SnS-based solar cell has been performed. The aim of this work is to examine how the Spiro-OMeTAD HTL affects the performance of SnS-based heterostructure solar cell. Using SCAPS-1D simulation software, various parameters of SnS-based solar cell such as work function, series and shunt resistance and working temperature have been investigated. With the help of Spiro-OMeTAD, the suggested cell's open-circuit voltage was increased to 344 mV. The use of Spiro-OMeTAD HTL in the SnS-based solar cell resulted in 14% efficiency increase, and the proposed heterojunction solar cell has 25.65% efficiency. The cell's performance is determined by the carrier density and width of the CeO2 ETL (electron transport layer), SnS absorber layer and Spiro-OMeTAD HTL (hole transport layer). These data reveal that the Spiro-OMeTAD solar cells could have been a good HTL (hole transport layer) in regards to producing SnS-based heterojunction solar cell with high efficiency and reduced cost.

Numerical Study to Enhance the Sensitivity of a Surface Plasmon Resonance Sensor with BlueP/WS2-Covered Al2O3-Nickel Nanofilms.

In the traditional surface plasmon resonance sensor, the sensitivity is calculated by the usage of angular interrogation. The proposed surface plasmon resonance (SPR) sensor uses a diamagnetic material (Al2O3), nickel (Ni), and two-dimensional (2D) BlueP/WS2 (blue phosphorous-tungsten di-sulfide). The Al2O3 sheet is sandwiched between silver (Ag) and nickel (Ni) films in the Kretschmann configuration. A mathematical simulation is performed to improve the sensitivity of an SPR sensor in the visible region at a frequency of 633 nm. The simulation results show that an upgraded sensitivity of 332°/RIU is achieved for the metallic arrangement consisting of 17 nm of Al2O3 and 4 nm of Ni in thickness for analyte refractive indices ranging from 1.330 to 1.335. The thickness variation of the layers plays a curial role in enhancing the performance of the SPR sensor. The thickness variation of the proposed configuration containing 20 nm of Al2O3 and 1 nm of Ni with a monolayer of 2D material BlueP/WS2 enhances the sensitivity to as high as 374°/RIU. Furthermore, it is found that the sensitivity can be altered and managed by means of altering the film portions of Ni and Al2O3.