Deep Learning-Based Inkjet Droplet Detection for Jetting Characterizations and Multijet Synchronization.

Inkjet printing is a powerful direct material writing process. It can be used to deposit microfluidic droplets in designated patterns at submicrometer resolution, which reduces materials usage. Nonetheless, predicting jetting characterizations is not easy because of the intrinsic complexity of the ink-nozzle-air interactions. Thus, inkjet processes are monitored by skilled engineers to ensure process reliability. This is a bottleneck in industry, resulting in high labor costs for multiple nozzles. To address this, we present a deep learning-based method for jetting characterizations. Inkjet printing is recorded by an in situ CCD camera and each droplet is detected by YOLOv5, a 1-stage detector using a convolutional neural network (CNN). The precision, recall, and mean average precision (mAP) at a 0.5 intersection over the union (IoU) threshold of the trained model were 0.86, 0.89, and 0.90, respectively. Each regression result for a detected droplet is accumulated in chronological order for each class of droplet and nozzle. The quantified information includes velocity, diameter, length, and translation, which can be used to synchronize multinozzle jetting and, eventually, the printed patterns. This demonstrates the feasibility of autonomous real-time process testing for large-scale electronics manufacturing, such as the high-resolution patterning of biosensor electrodes and QD display pixels while exploiting big data obtained from jetting characterizations.

Local mapping of surface potential in pentacene thin film under gate bias voltage obtained by scanning kelvin probe microscopy.

We report the local surface potential mapping of pentacene film prepared by physical vapor deposition with scanning kelvin probe microscopy where the sample is scanned under different gate voltages. Surface topography and the corresponding potential maps were obtained simultaneously. Spatial distribution of the surface potential at a low gate voltage is clearly correlated with topographic features. A lower electrostatic potential was measured at the grain boundaries (GBs), suggesting that GBs behave as hole traps. This observation is bolstered by conductive atomic force microscopy (C-AFM) data, which reveals a higher conductivity within the grains as opposed to the GBs. An increase in gate voltage minimizes the potential differences at the grain and GBs, suggesting a modification in trap occupancy. We expect that these experimental results, along with existing theories, will provide a better understanding of the microstructural-electrical properties of pentacene film. RESEARCH HIGHLIGHTS: Local surface potential mapping of pentacene film with scanning kelvin probe microscopy. Correlation between the surface potential map and topography at a low gate voltage. Decrease of the potential distribution inhomogeneity by the gate voltage increasement. Higher conductivity at inner grain than grain boundary in conductive atomic force microscopy.

Randomly Disassembled Nanostructure for Wide Angle Light Extraction of Top-Emitting Quantum Dot Light-Emitting Diodes.

The quantum dot light-emitting diode (QLED) represents one of the strongest display technologies and has unique advantages like a shallow emission spectrum and superior performance based on the cumulative studies of state-of-the-art quantum dot (QD) synthesis and interfacial engineering. However, research on managing the device's light extraction has been lacking compared to the conventional LED field. Moreover, relevant studies on top-emitting QLEDs (TE-QLEDs) have been severely lacking compared to bottom-emitting QLEDs (BE-QLEDs). This paper demonstrates a novel light extraction structure called the randomly disassembled nanostructure (RaDiNa). The RaDiNa is formed by detaching polydimethylsiloxane (PDMS) film from a ZnO nanorod (ZnO NR) layer and laying it on top of the TE-QLED. The RaDiNa-attached TE-QLED shows significantly widened angular-dependent electroluminescence (EL) intensities over the pristine TE-QLED, confirming the effective light extraction capability of the RaDiNa layer. Consequently, the optimized RaDiNa-attached TE-QLED achieves enhanced external quantum efficiency (EQE) over the reference device by 60%. For systematic analyses, current-voltage-luminance (J-V-L) characteristics are investigated using scanning electron microscopy (SEM) and optical simulation based on COMSOL Multiphysics. It is believed that this study's results provide essential information for the commercialization of TE-QLEDs.

Effect of Calcination Temperature on the Physicochemical Properties and Electrochemical Performance of FeVO4 as an Anode for Lithium-Ion Batteries.

Several electrode materials have been developed to provide high energy density and a long calendar life at a low cost for lithium-ion batteries (LIBs). Iron (III) vanadate (FeVO4), a semiconductor material that follows insertion/extraction chemistry with a redox reaction and provides high theoretical capacity, is an auspicious choice of anode material for LIBs. The correlation is investigated between calcination temperatures, morphology, particle size, physicochemical properties, and their effect on the electrochemical performance of FeVO4 under different binders. The crystallite size, particle size, and tap density increase while the specific surface area (SBET) decreases upon increasing the calcination temperature (500 °C, 600 °C, and 700 °C). The specific capacities are reduced by increasing the calcination temperature and particle size. Furthermore, FeVO4 fabricated with different binders (35 wt.% PAA and 5 wt.% PVDF) and their electrochemical performance for LIBs was explored regarding the effectiveness of the PAA binder. FV500 (PAA and PVDF) initially delivered higher discharge/charge capacities of 1046.23/771.692 mAhg-1 and 1051.21/661.849 mAhg-1 compared to FV600 and FV700 at the current densities of 100 mAg-1, respectively. The intrinsic defects and presence of oxygen vacancy along with high surface area and smaller particle sizes efficiently enhanced the ionic and electronic conductivities and delivered high discharge/charge capacities for FeVO4 as an anode for LIBs.

Fabrication of Type-Variable Electronic Paper Using Electrophoretic Particle Loading with Multiple Bottom Electrode Structure.

This study suggested the design of type-variable electronic paper with multiple bottom electrode structures and experimentally investigated the process mechanism of the electrophoretic particle loading method (EPLM) as an electronic ink injection method. The type-variable electronic paper was achieved by constructing the multi-electrode structure that had a structure of four electrodes that can independently apply voltage to one cell. By injecting electronic ink that mixes two types of particles with opposite charges into an electrically neutral color (blue) fluid, we realized electronic paper with a single color, and we then measured the optical characteristics of the panel. We used the EPLM to prevent charged particles that have lost their charge from being injected into the e-paper by using an electric field. In order to confirm the color expression and transmittance control effect using the multi-electrode structure, we conducted reflectance measurement and transmittance measurement experiments. Our experiments confirmed that the expression of more than five colors was possible and that the transmittance was controllable to a minimum of 13.50% and a maximum of 71.18%. This study provides an attractive method to create e-paper as a new form outside the framework of existing e-paper technology.

Deep-Learning-Based Microfluidic Droplet Classification for Multijet Monitoring.

Inkjet printing, the deposition of microfluidic droplets on a specified area, has gained increasing attention from both academia and industry for its versatility and scalability for mass production. Inkjet printing productivity depends on the number of nozzles used in a multijet process. However, droplet jetting conditions can vary for each nozzle due to multiple factors, such as the surface wetting condition of the nozzle, properties of the ink, and variances in the manufacturing of the nozzle head. For these reasons, droplet jetting conditions must be continuously monitored and evaluated by skillful engineers. The present study presents a deep-learning-based method to identify the droplet jetting status of a single-jet printing process. A convolutional neural network (CNN)-based on the MobileNetV2 model was employed with optimized hyperparameters to classify the inkjet frames containing images captured with a CCD camera. By accumulating the classified class data in order by frame time, the jetting conditions could be evaluated with high accuracy. The method was also successfully demonstrated with a multijet process, with a test time of less than a second per image.

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application.

The intense pulsed light (IPL) post-treatment process has attracted great attention in the device fabrication due to its versatility and rapidity particularly for solution process functional structures in devices, flexible/printed electronics, and continuous manufacturing process. The metal oxide materials inherently have multi-functionality and have been widely used in form of thin films or nanostructures in device application such as thin film transistors, light emitting diodes, solar cells, supercapacitors, etc. The IPL treatment enhances the physical and/or chemical properties of the functional metal oxide through photothermal effects. However, most metal oxides are transparent to most range of visible light and require more energy for post-treatment. In this review, we have summarized the IPL post-treatment processes for metal oxide thin films and nanostructures in device applications. The sintering and annealing of metal oxides using IPL improved the device performances by employing additional light absorbing layer or back-reflector. The IPL process becomes an innovative versatile post-treatment process in conjunction with multi-functional metal oxides in near-future device applications.

Facile fabrication of flexible metal grid transparent electrode using inkjet-printed dot array as sacrificial layer.

In this study, we introduce a flexible metal grid transparent electrode fabricated using a lift-off process. This transparent electrode consisting of metal thin film with punched-like pattern by hole array was fabricated with 8 um separations. The separation of inkjet-printed etching resistant ink droplets was controlled in order to investigate the relationship between its electrical and optical properties of the electrodes. The aluminum areal density was defined to predict the electrical and optical properties of different arrays. A high and uniform transmittance spectrum appears to extend broadly into the UV region. The figure of merit of the transparent electrode was investigated in order to determine its performance as a transparent electrode. Moreover, there was no significant change in the resistance after 7000 bending cycles, indicating that the array conductor had superior stability. We also demonstrate transparent touch screen panels fabricated using the transparent electrode.

Sequential Improvement from Cosolvents Ink Formulation to Vacuum Annealing for Ink-Jet Printed Quantum-Dot Light-Emitting Diodes.

Optimization of ink-jet printing conditions of quantum-dot (QD) ink by cosolvent process and improvement of quantum-dot light-emitting diodes (QLEDs) characteristics assisted by vacuum annealing were analyzed in this research. A cosolvent process of hexane and ortho-dichlorobenzene (oDCB) was optimized at the ratio of 1:2, and ink-jetting properties were analyzed using the Ohnesorge number based on the parameters of viscosity and surface tension. However, we found that these cosolvents systems cause an increase in the boiling point and a decrease in the vapor pressure, which influence the annealing characteristics of the QD emission layer (EML). Therefore, we investigated QLEDs' performance depending on the annealing condition for ink-jet printed QD EML prepared using cosolvents systems of hexane and oDCB. We enhanced the quality of QD EML and device performance of QLEDs by a vacuum annealing process, which was used to prevent exposure to moisture and oxygen and to promote effective evaporation of solvent in QD EML. As a result, the characteristics of QLEDs formed using ink-jet printed QD EML annealed under vacuum environment increased luminescence (L), current efficiency (CE), external quantum efficiency (EQE), and lifetime (LT50) by 30.51%, 33.7%, 21.70%, and 181.97%, respectively, compared to QLEDs annealed under air environment.

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation.

In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).

Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes.

In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.

Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates.

In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 VDD . More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m-2 at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application.

CdSe tetrapod interfacial layer for improving electron extraction in planar heterojunction perovskite solar cells.

We demonstrate the improvement in the efficiency of planar heterojunction perovskite solar cells by employing cadmium selenide tetrapods (CdSe TPs) as an electron extraction layer. The insertion of the CdSe TP layer between the titanium oxide (TiO2) and perovskite film facilitates electron transfer at the TiO2/perovskite interface, as indicated by the significantly quenched steady-state photoluminescence of the perovskite film. Furthermore, we observed a conductivity enhancement of the perovskite film by introducing the CdSe TP layer. The combination of both effects induced by the TPs leads to enhancement in the carrier extraction as well as decreased recombination losses in the perovskite solar cells. As a result, an efficiency of 13.5% (1 sun condition) is achieved in the perovskite solar cells that incorporate the CdSe TP layer, which is 10% higher than that of the device without the CdSe TP layer.

A dual-scale metal nanowire network transparent conductor for highly efficient and flexible organic light emitting diodes.

Although solution processed metal nanowire (NW) percolation networks are a strong candidate to replace commercial indium tin oxide, their performance is limited in thin film device applications due to reduced effective electrical areas arising from the dimple structure and percolative voids that single size metal NW percolation networks inevitably possess. Here, we present a transparent electrode based on a dual-scale silver nanowire (AgNW) percolation network embedded in a flexible substrate to demonstrate a significant enhancement in the effective electrical area by filling the large percolative voids present in a long/thick AgNW network with short/thin AgNWs. As a proof of concept, the performance enhancement of a flexible phosphorescent OLED is demonstrated with the dual-scale AgNW percolation network compared to the previous mono-scale AgNWs. Moreover, we report that mechanical and oxidative robustness, which are critical for flexible OLEDs, are greatly increased by embedding the dual-scale AgNW network in a resin layer.

Selective sintering of metal nanoparticle ink for maskless fabrication of an electrode micropattern using a spatially modulated laser beam by a digital micromirror device.

We demonstrate selective laser sintering of silver (Ag) nanoparticle (NP) ink using a digital micromirror device (DMD) for the facile fabrication of 2D electrode pattern without any conventional lithographic means or scanning procedure. An arbitrary 2D pattern at the lateral size of 25 µm × 25 µm with 160 nm height is readily produced on a glass substrate by a short exposure of 532 nm Nd:YAG continuous wave laser. The resultant metal pattern exhibits low electrical resistivity of 10.8 uΩ · cm and also shows a fine edge sharpness by the virtue of low thermal conductivity of Ag NP ink. Furthermore, 10 × 10 star-shaped micropattern arrays are fabricated through a step-and-repeat scheme to ensure the potential of this process for the large-area metal pattern fabrication.