Direct Microrolling Processing on a Silicon Wafer.

Although, varieties of micro- to nanoscale fabrication technologies have been invented and refined for silicon (Si) processing because Si is the basic material of integrated circuits, the layouts are based on layer-by-layer approaches, making it difficult to realize three-dimensional (3D) structures with complicated shapes normal to the planar surface (along the out-of-plane direction) of the wafers used. Here, a novel and direct Si-processing technology that enables to bend thin layers of Si surfaces into various 3D curved structures at the micrometer scale is introduced. This bending is achieved by porosifying a Si wafer surface using anodic oxidation and then performing conventional photolithography patterning and wet etching. The porosity gradient in the depth direction gives rise to a stress-internalized layer in which self-rolling action is induced via subsequent patterning and wet etching. A subsequent oxidation process further enhances the curvature deformation, leading to the formation of tubes, for example. The rolling directions can be controlled by 2D patterning of the porous Si layer, which is explained well from a structural dynamics perspective. This technology has a wide range of capabilities for realizing 3D structures on Si substrates, enabling new design possibilities for Si-based on-chip devices.

Terahertz wire grid polarizer fabricated by imprinting porous silicon.

A terahertz (THz) wire-grid polarizer is fabricated by imprinting porous Si followed by oblique evaporation of Ag. We demonstrate that it works in a wide frequency region covering from 5 to 18 THz with the extinction ratio of 10 dB. The frequency region is much wider than that of THz wire-grid polarizers fabricated by conventional imprint lithography using organic materials. The result suggests that imprinting of porous Si is a promising fabrication technique to realize low-cost wire-grid polarizers working in the THz region.

Microassembly of semiconductor three-dimensional photonic crystals.

Electronic devices and their highly integrated components formed from semiconductor crystals contain complex three-dimensional (3D) arrangements of elements and wiring. Photonic crystals, being analogous to semiconductor crystals, are expected to require a 3D structure to form successful optoelectronic devices. Here, we report a novel fabrication technology for a semiconductor 3D photonic crystal by uniting integrated circuit processing technology with micromanipulation. Four- to twenty-layered (five periods) crystals, including one with a controlled defect, for infrared wavelengths of 3-4.5 microm, were integrated at predetermined positions on a chip (structural error <50 nm). Numerical calculations revealed that a transmission peak observed at the upper frequency edge of the bandgap originated from the excitation of a resonant guided mode in the defective layers. Despite their importance, detailed discussions on the defective modes of 3D photonic crystals for such short wavelengths have not been reported before. This technology offers great potential for the production of optical wavelength photonic crystal devices.