RESUMEN
Optical microscopy is sensitive both to arrays of nanoscale features and to their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element of optical metrology. Current, well-established optical methods used to identify defects in semiconductor patterning are in jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images of defects is presented using simulated and experimental examples. This new method allows defects as narrow as (16 ± 2) nm (k = 1) to be revealed using 193 nm light with focus and illumination conditions optimized for three-dimensional data analysis. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.
Asunto(s)
Algoritmos , Interpretación de Imagen Asistida por Computador/métodos , Imagenología Tridimensional/métodos , Ensayo de Materiales/métodos , Microscopía/métodos , Nanopartículas/ultraestructura , Reconocimiento de Normas Patrones Automatizadas/métodos , Aumento de la Imagen/métodos , Sensibilidad y EspecificidadRESUMEN
The connection between the average properties of a polymer/nanocrystal hybrid material and the nanocrystal spatial distribution is shown. Specifically, a property such as the glass transition temperature, Tg, is shown to vary by as much as 65 degrees C through only changes in the spatial distribution of the nanocrystals. Considerable control can be exercised over the nanoparticle spatial distribution. In addition, we show that while the Tg of a thin film hybrid material may be enhanced in relation to the pure bulk system, the bulk nanocomposite analog shows a reduction in Tg. These findings have broad implications with regard to the design of materials with required properties.
RESUMEN
It is well-known that a bulk, symmetric, A-b-B diblock copolymer forms a lamellar morphology, with period L, below an order-disorder transition (T(ODT)) temperature, for chiN < 10.5; chi is the Flory-Huggins interaction parameter and N is the degree of polymerization of the copolymer. The ordering temperatures of poly(styrene-b-methyl methacrylate) (PS-b-PMMA) thin film diblock copolymers of thickness h = 2L, supported by SiO(x)/Si substrates, in vacuum environments, are shown to increase beyond the bulk, and estimates of the temperature shifts indicate that small changes of chiN are associated with unusually large shifts of the transition temperature. Further, we find that in compressed CO(2) environments, these films are ordered at temperatures where the films are disordered in vacuum (or air) environments. This latter observation is of particular significance because small molecule diluents, including compressed CO(2), are known to decrease the ODT of the bulk (enhanced miscibility).