New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission.

Photoelectron spectroscopy is a characterization technique which plays a key role in device technology, a field requiring, very often, a reliable and reproducible analysis of buried, critical interfaces. The recent advent of laboratory hard X-ray spectrometers opens new perspectives toward routine studies of technologically-relevant samples for the qualification of processes and materials. In this review, the status of hard X-ray photoelectron spectroscopy (HAXPES) implemented with chromium Kα excitation (5.414 keV) and applied to technological research in nanoelectronics is presented. After an account of the role of synchrotron HAXPES and the specific effects to care about at the practical level, different aspects are developed, first for illustrating the benefits of the technique through specific application cases in the field of resistive memories and power transistors. Then, we provide a status update on quantification in HAXPES, both from core-level intensities and inelastic background analysis. Finally, we present preliminary results in a novel analytical field, operando HAXPES, where a prototypical device is operated in situ during the laboratory HAXPES experiment, opening up the possibility of unravelling the mechanisms occurring at buried interfaces and governing device operation.

Chemical controls on the propagation rate of fracture in calcite.

Calcite (CaCO3) is one of the most abundant minerals in the Earth's crust, and it is susceptible to subcritical chemically-driven fracturing. Understanding chemical processes at individual fracture tips, and how they control the development of fractures and fracture networks in the subsurface, is critical for carbon and nuclear waste storage, resource extraction, and predicting earthquakes. Chemical processes controlling subcritical fracture in calcite are poorly understood. We demonstrate a novel approach to quantify the coupled chemical-mechanical effects on subcritical fracture. The calcite surface was indented using a Vickers-geometry indenter tip, which resulted in repeatable micron-scale fractures propagating from the indent. Individual indented samples were submerged in an array of aqueous fluids and an optical microscope was used to track the fracture growth in situ. The fracture propagation rate varied from 1.6 × 10-8 m s-1 to 2.4 × 10-10 m s-1. The rate depended on the type of aqueous ligand present, and did not correlate with the measured dissolution rate of calcite or trends in zeta-potential. We postulate that chemical complexation at the fracture tip in calcite controls the growth of subcritical fracture. Previous studies indirectly pointed to the zeta-potential being the most critical factor, while our work indicates that variation in the zeta-potential has a secondary effect.

Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation.

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 µm long channel having an effective cross section ∼70 × 220 nm(2) is directly fabricated into an epitaxial n (+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n (+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the µm-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a ∼15 nm thick gate oxide. This trigate device has threshold voltage ∼0.14 V and peak transconductance ∼35 µS µm(-1) with a subthreshold swing ∼150 mV/decade and on/off ratio of drain current ∼10(3), comparable to the performance of bottom-up NW devices.

Density functional theory calculations of XPS binding energy shift for nitrogen-containing graphene-like structures.

Our results validate the use of independent DFT predicted BE shifts for defect identification and constraining ambient pressure XPS observations for Me-Nx moieties in pyrolyzed carbon based ORR electrocatalysts. This supports the understanding of such catalysts as vacancy-and-substitution defects in a graphene-like matrix.