Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.

Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.

Bilinear Magnetoresistance in HgTe Topological Insulator: Opposite Signs at Opposite Surfaces Demonstrated by Gate Control.

Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced as bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling with an electric gate the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics.

Spin-Charge Interconversion in KTaO3 2D Electron Gases.

Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO3 (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO3 is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO3 single crystals, characterized by angle-resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. Their spin-charge interconversion efficiency is then compared with that of STO-based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO3 2DEGs into spin-orbitronic devices is compared.

Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point.

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which magnetization and angular momentum compensation can be obtained by the fine adjustment of the Ni content. Large domain wall velocities, approaching 3000 m/s, are measured for Ni compositions close to the angular momentum compensation point. The reversal of the DW motion direction, observed when the compensation composition is crossed, is related to the change of direction of the angular momentum with respect to that of the spin polarization. This is confirmed by the results of ab initio band structure calculations.

Non-volatile electric control of spin-charge conversion in a SrTiO3 Rashba system.

After 50 years of development, the technology of today's electronics is approaching its physical limits, with feature sizes smaller than 10 nanometres. It is also becoming clear that the ever-increasing power consumption of information and communication systems1 needs to be contained. These two factors require the introduction of non-traditional materials and state variables. As recently highlighted2, the remanence associated with collective switching in ferroic systems is an appealing way to reduce power consumption. A promising approach is spintronics, which relies on ferromagnets to provide non-volatility and to generate and detect spin currents3. However, magnetization reversal by spin transfer torques4 is a power-consuming process. This is driving research on multiferroics to achieve low-power electric-field control of magnetization5, but practical materials are scarce and magnetoelectric switching remains difficult to control. Here we demonstrate an alternative strategy to achieve low-power spin detection, in a non-magnetic system. We harness the electric-field-induced ferroelectric-like state of strontium titanate (SrTiO3)6-9 to manipulate the spin-orbit properties10 of a two-dimensional electron gas11, and efficiently convert spin currents into positive or negative charge currents, depending on the polarization direction. This non-volatile effect opens the way to the electric-field control of spin currents and to ultralow-power spintronics, in which non-volatility would be provided by ferroelectricity rather than by ferromagnetism.

Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films.

Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the evolution of the inverse spin Hall effect of Ni_{60}Cu_{40} and Ni_{50}Cu_{50} across their Curie temperatures using spin-pumping experiments. We show that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results point toward a Heisenberg localized model of the transition and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase.

Electric-Field Control of Spin Current Generation and Detection in Ferromagnet-Free SrTiO3-Based Nanodevices.

Spintronics entails the generation, transport, manipulation and detection of spin currents, usually in hybrid architectures comprising interfaces whose impact on performance is detrimental. In addition, how spins are generated and detected is generally material specific and determined by the electronic structure. Here, we demonstrate spin current generation, transport and electrical detection, all within a single non-magnetic material system: a SrTiO3 two-dimensional electron gas (2DEG) with Rashba spin-orbit coupling. We show that the spin current is generated from a charge current by the 2D spin Hall effect, transported through a channel and reconverted into a charge current by the inverse 2D spin Hall effect. Furthermore, by adjusting the Fermi energy with a gate voltage we tune the generated and detected spin polarization and relate it to the complex multiorbital band structure of the 2DEG. We discuss the leading mechanisms of the spin-charge interconversion processes and argue for the potential of quantum oxide materials for future all-electrical low-power spin-based logic.

Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films.

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetization, a very high extraordinary Hall angle (2%) and smooth domain walls at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin-polarized currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetization and a large spin polarization. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.

Mapping spin-charge conversion to the band structure in a topological oxide two-dimensional electron gas.

While spintronics has traditionally relied on ferromagnetic metals as spin generators and detectors, spin-orbitronics exploits the efficient spin-charge interconversion enabled by spin-orbit coupling in non-magnetic systems. Although the Rashba picture of split parabolic bands is often used to interpret such experiments, it fails to explain the largest conversion effects and their relationship with the electronic structure. Here, we demonstrate a very large spin-to-charge conversion effect in an interface-engineered, high-carrier-density SrTiO3 two-dimensional electron gas and map its gate dependence on the band structure. We show that the conversion process is amplified by enhanced Rashba-like splitting due to orbital mixing and in the vicinity of avoided band crossings with topologically non-trivial order. Our results indicate that oxide two-dimensional electron gases are strong candidates for spin-based information readout in new memory and transistor designs. Our results also emphasize the promise of topology as a new ingredient to expand the scope of complex oxides for spintronics.

Ferromagnetic/Nonmagnetic Nanostructures for the Electrical Measurement of the Spin Hall Effect.

Spin-orbitronics is based on the ability of spin-orbit interactions to achieve the conversion between charge currents and pure spin currents. As the precise evaluation of the conversion efficiency becomes a crucial issue, the need for straightforward ways to observe this conversion has emerged as one of the main challenges in spintronics. Here, we propose a simple device, akin to the ferromagnetic/nonmagnetic bilayers used in most spin-orbit torques experiments, and consisting of a spin Hall effect wire connected to two transverse ferromagnetic electrodes. We show that this system allows probing electrically the direct and inverse conversion in a spin Hall effect system and measuring both the spin Hall angle and the spin diffusion length. By applying this method to several spin Hall effect materials (Pt, Pd, Au, Ta, W), we show that it represents a promising tool for the metrology of spin-orbit materials.