Electroluminescent, polycrystalline cadmium selenide nanowire arrays.

Electroluminescence (EL) from nanocrystalline CdSe (nc-CdSe) nanowire arrays is reported. The n-type, nc-CdSe nanowires, 400-450 nm in width and 60 nm in thickness, were synthesized using lithographically patterned nanowire electrodeposition, and metal-semiconductor-metal (M-S-M) devices were prepared by the evaporation of two gold contacts spaced by either 0.6 or 5 µm. These M-S-M devices showed symmetrical current voltage curves characterized by currents that increased exponentially with applied voltage bias. As the applied biased was increased, an increasing number of nanowires within the array "turned on", culminating in EL emission from 30 to 50% of these nanowires at applied voltages of 25-30 V. The spectrum of the emitted light was broad and centered at 770 nm, close to the 1.74 eV (712 nm) band gap of CdSe. EL light emission occurred with an external quantum efficiency of 4 × 10(-6) for devices with a 0.60 µm gap between the gold contacts and 0.5 × 10(-6) for a 5 µm gap-values similar to those reported for M-S-M devices constructed from single-crystalline CdSe nanowires. Kelvin probe force microscopy of 5 µm nc-CdSe nanowire arrays showed pronounced electric fields at the gold electrical contacts, coinciding with the location of strongest EL light emission in these devices. This electric field is implicated in the Poole-Frenkel minority carrier emission and recombination mechanism proposed to account for EL light emission in most of the devices that were investigated.

Field-effect transistors from lithographically patterned cadmium selenide nanowire arrays.

Field-effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrodeposition (LPNE) process on SiO(2)/Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C × 4 h either with or without exposure to CdCl(2) in methanol-a grain growth promoter. The influence of CdCl(2) treatment was to increase the mean grain diameter from 10 to 80 nm as determined by grazing incidence X-ray diffraction and to convert the crystal structure from cubic to wurtzite. Measured transfer characteristics showed an increase of the field effect mobility (µ(eff)) by an order of magnitude from 1.94 × 10(-4) cm(2)/(V s) to 23.4 × 10(-4) cm(2)/(V s) for pc-CdSe nanowires subjected to the CdCl(2) treatment. The CdCl(2) treatment also reduced the threshold voltage (from 20 to 5 V) and the subthreshold slope (by ~35%). Transfer characteristics for pc-CdSe NWFETs were also influenced by the channel length, L. For CdCl(2)-treated nanowires, µ(eff) was reduced by a factor of eight as L increased from 5 to 25 µm. These channel length effects are attributed to the presence of defects including breaks and constrictions within individual pc-CdSe nanowires.

High-throughput fabrication of photoconductors with high detectivity, photosensitivity, and bandwidth.

Nanocrystalline cadmium selenide (nc-CdSe) was electrodeposited within a sub-50 nm gold nanogap, prepared by feedback-controlled electromigration, to form a photoconductive metal-semiconductor-metal nanojunction. Both gap formation and electrodeposition were rapid and automated. The electrodeposited nc-CdSe was stoichiometric, single cubic phase with a mean grain diameter of ∼7 nm. Optical absorption, photoluminescence, and the spectral photoconductivity response of the nc-CdSe were all dominated by band-edge transitions. The photoconductivity of these nc-CdSe-filled gold nanogaps was characterized by a detectivity of 6.9 × 10(10) Jones and a photosensitivity of 500. These devices also demonstrated a maximum photoconductive gain of ∼45 and response and recovery times below 2 µs, corresponding to a 3 dB bandwidth of at least 175 kHz.

Mesoporous manganese oxide nanowires for high-capacity, high-rate, hybrid electrical energy storage.

Arrays of mesoporous manganese dioxide, mp-MnO(2), nanowires were electrodeposited on glass and silicon surfaces using the lithographically patterned nanowire electrodeposition (LPNE) method. The electrodeposition procedure involved the application, in a Mn(ClO(4))(2)-containing aqueous electrolyte, of a sequence of 0.60 V (vs MSE) voltage pulses delineated by 25 s rest intervals. This "multipulse" deposition program produced mp-MnO(2) nanowires with a total porosity of 43-56%. Transmission electron microscopy revealed the presence within these nanowires of a network of 3-5 nm diameter fibrils that were X-ray and electron amorphous, consistent with the measured porosity values. mp-MnO(2) nanowires were rectangular in cross-section with adjustable height, ranging from 21 to 63 nm, and adjustable width ranging from 200 to 600 nm. Arrays of 20 nm × 400 nm mp-MnO(2) nanowires were characterized by a specific capacitance, C(sp), of 923 ± 24 F/g at 5 mV/s and 484 ± 15 F/g at 100 mV/s. These C(sp) values reflected true hybrid electrical energy storage with significant contributions from double-layer capacitance and noninsertion pseudocapacitance (38% for 20 nm × 400 nm nanowires at 5 mV/s) coupled with a Faradaic insertion capacity (62%). These two contributions to the total C(sp) were deconvoluted as a function of the potential scan rate.