Tailoring Contacts for High-Performance 1D Ta2Pt3S8 Field-Effect Transistors.

Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research with remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) vdW materials, celebrated for their advantageous properties, characterized by reduced dimensionality and the absence of dangling bonds. In this context, we synthesize Ta2Pt3S8, a 1D vdW material, and assess its suitability for field-effect transistor (FET) applications. Spectroscopic analysis and electrical characterization confirmed that the band gap and work function of Ta2Pt3S8 are 1.18 and 4.77 eV, respectively. Leveraging various electrode materials, we fabricated n-type FETs based on Ta2Pt3S8 and identified Cr as the optimal electrode, exhibiting a high mobility of 57 cm2 V-1 s-1. In addition, we analyzed the electron transport mechanism in n-type FETs by investigating Schottky barrier height, Schottky barrier tunneling width, and contact resistance. Furthermore, we successfully fabricated p-type operating Ta2Pt3S8 FETs using a molybdenum trioxide (MoO3) layer as a high work function contact electrode. Finally, we achieved Ta2Pt3S8 nanowire rectifying diodes by creating a p-n junction with asymmetric contact electrodes of Cr and MoO3, demonstrating an ideality factor of 1.06. These findings highlight the electronic properties of Ta2Pt3S8, positioning it as a promising 1D vdW material for future nanoelectronics and functional vdW-based device applications.

Promoted Overall Water Splitting Catalytic Activity and Durability of Ni3 Fe Alloy by Designing N-Doped Carbon Encapsulation.

Combining an electrochemically stable material onto the surface of a catalyst can improve the durability of a transition metal catalyst, and enable the catalyst to operate stably at high current density. Herein, the contribution of the N-doped carbon shell (NCS) to the electrochemical properties is evaluated by comparing the characteristics of the Ni3 Fe@NCS catalyst with the N-doped carbon shell, and the Ni3 Fe catalyst. The synthesized Ni3 Fe@NCS catalyst has a distinct overpotential difference from the Ni3 Fe catalyst (ηOER = 468.8 mV, ηHER = 462.2 mV) at (200 and -200) mA cm-2 in 1 m KOH. In stability test at (10 and -10) mA cm-2 , the Ni3 Fe@NCS catalyst showed a stability of (95.47 and 99.6)%, while the Ni3 Fe catalyst showed a stability of (72.4 and 95.9)%, respectively. In addition, the in situ X-ray Absorption Near Edge Spectroscopy (XANES) results show that redox reaction appeared in the Ni3 Fe catalyst by applying voltages of (1.7 and -0.48) V. The decomposition of nickel and iron due to the redox reaction is detected as a high ppm concentration in the Ni3 Fe catalyst through Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES) analysis. This work presents the strategy and design of a next-generation electrochemical catalyst to improve the electrocatalytic properties and stability.

Colloidal Synthesis of Ultrathin and Se-Rich V2Se9 Nanobelts as High-Performance Anode Materials for Li-Ion Batteries.

In this study, the one-dimensional (1D) material V2Se9 was successfully synthesized using a colloidal method with VO(acac)2 and Se powder as precursors in a 1-octadecene solvent. The obtained colloidally synthesized V2Se9 (C-V2Se9) has an ultrathin nanobelt shape and a 4.5 times higher surface area compared with the bulk V2Se9, which is synthesized in a solid-state reaction as previously reported. In addition, all surfaces of C-V2Se9 are exposed to Se atoms, which is advantageous for storing Li through the conversion reaction into the Li2Se phase. Herein, the electrochemical performance of the C-V2Se9 anode material is evaluated; thus, the novelty of C-V2Se9 as a Se-rich 1D anode material is verified. The C-V2Se9 electrode exhibits a reversible capacity of 893.21 mA h g-1 and a Coulombic efficiency of 97.82% at the 100th cycle and excellent structural stability. Compared with the bulk V2Se9 electrode, the outstanding electrochemical performance of C-V2Se9 is attributed to its ultrathin nanobelt shape, high surface area, shorter Li diffusion length, and more electrochemically active sites. This work indicates the great potential of the Se-rich 1D material, C-V2Se9, as a post-transition metal dichalcogenide material for high-performance LIBs.

Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS.

Two-dimensional (2D) palladium phosphide sulfide (PdPS) has garnered significant attention, owing to its exotic physical properties originating from the distinct Cairo pentagonal tiling topology. Nevertheless, the properties of PdPS remain unexplored, especially for electronic devices. In this study, we introduce the thickness-dependent electrical characteristics of PdPS flakes into fabricated field-effect transistors (FETs). The broad thickness variation of the PdPS flakes, ranging from 0.7-306 nm, is prepared by mechanical exfoliation, utilizing large bulk crystals synthesized via chemical vapor transport. We evaluate this variation and confirm a high electron mobility of 14.4 cm2 V-1 s-1 and Ion/Ioff > 107. Furthermore, the 6.8 nm-thick PdPS FET demonstrates a negligible Schottky barrier height at the gold electrode contact, as evidenced by the measurement of the temperature-dependent transfer characteristics. Consequently, we adjusted the Fowler-Nordheim tunneling mechanism to elucidate the charge-transport mechanism, revealing a modulated mobility variation from 14.4 to 41.2 cm2 V-1 s-1 with an increase in the drain voltage from 1 to 5 V. The present findings can broaden the understanding of the unique properties of PdPS, highlighting its potential as a 2D ternary chalcogenide in future electronic device applications.