Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO2 at CF4/H2/Ar Plasma.

This study investigated the effect of temperature on the aspect-ratio etching of SiO2 in CF4/H2/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO2. However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma. The variables obtained from the characterization of the etched profile for the 200 nm trench after etching were analyzed as a function of temperature. A reduction in the necking ratio affected the etch rate and aspect ratio of SiO2. The etching mechanism of the aspect ratio etching of SiO2 was discussed based on the results of the surface composition at necking via energy-dispersive X-ray spectroscopy with temperature. The results suggested that the neutral species reaching the etch front of SiO2 had a low sticking coefficient. The bowing ratio decreased with lowering temperature, indicating the presence of directional ions during etching. Therefore, a lower temperature for the aspect ratio etching of SiO2 could achieve a faster etch rate and a higher aspect ratio of SiO2 via the reduction of necking than higher temperatures.

Measurement of re-entry plasma density using microwave reflectometer in laboratory.

A laboratory-scale experiment was conducted to reproduce plasma with properties similar to re-entry plasma and measure the plasma density using a microwave reflectometer system. To reproduce a similar re-entry plasma, a high-temperature refractory anode vacuum arc plasma method was used among arc plasma discharge methods, and arc plasma having high temperature, high speed, and high-density plasma characteristics was discharged inside a vacuum chamber. A hot refractory anode made of tungsten was used to show high-temperature plasma characteristics, and high-density plasma characteristics were demonstrated using re-evaporation around the anode. In addition, high-speed plasma characteristics were exhibited using a brass cathode. This kind of arc plasma discharge has a high temperature and is characterized by high fluctuation. It was determined that a microwave reflectometer system with good spatial resolution and non-invasiveness would be suitable to measure plasma with these characteristics. The reflection coefficient was measured using a reflector system by comparing the voltage between the traveling wave applied to the plasma and the reflected wave reflected by the plasma, and the technique of analyzing the plasma density using the difference between these reflection coefficients was used. In this study, the plasma density according to the pressure change was typically measured as 1012-1013 cm-3, which showed a similar tendency to the result of measuring the actual re-entry plasma density.

Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer.

The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.