Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires.

InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite (WZ) or zincblende (ZB) crystal phase and their photoluminescence (PL) properties were investigated at low temperature (≈6 K) for different measurement geometries. PL emissions from the NWs were carefully studied in a wide energy range from 0.7 to 1.6 eV. The different features observed in the PL spectra for increasing energies are attributed to four distinct emitting domains of these nano-heterostructures: the InAs island (axially grown), the thin InAs capping shell (radially grown), the crystal-phase quantum disks arising from the coexistence of InP ZB and WZ segments in the same NW, and the InP portions of the NW. These results provide a useful frame for the rational implementation of InP-InAs-InP multi-shell NWs containing various quantum confined domains as polychromatic optically active components in nanodevices for quantum information and communication technologies.

Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices.

We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed.

Heterogeneous nucleation of catalyst-free InAs nanowires on silicon.

We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si(111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but careful choice of annealing and growth temperature allows us to strongly reduce the relative density of these islands and to realize samples with high nanowire yield.

Geometrical vortex lattice pinning and melting in YBaCuO submicron bridges.

Since the discovery of high-temperature superconductors (HTSs), most efforts of researchers have been focused on the fabrication of superconducting devices capable of immobilizing vortices, hence of operating at enhanced temperatures and magnetic fields. Recent findings that geometric restrictions may induce self-arresting hypervortices recovering the dissipation-free state at high fields and temperatures made superconducting strips a mainstream of superconductivity studies. Here we report on the geometrical melting of the vortex lattice in a wide YBCO submicron bridge preceded by magnetoresistance (MR) oscillations fingerprinting the underlying regular vortex structure. Combined magnetoresistance measurements and numerical simulations unambiguously relate the resistance oscillations to the penetration of vortex rows with intermediate geometrical pinning and uncover the details of geometrical melting. Our findings offer a reliable and reproducible pathway for controlling vortices in geometrically restricted nanodevices and introduce a novel technique of geometrical spectroscopy, inferring detailed information of the structure of the vortex system through a combined use of MR curves and large-scale simulations.

Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell Nanowires.

We demonstrate tunable bistability and a strong negative differential resistance in InAs/GaSb core-shell nanowire devices embedding a radial broken-gap heterojunction. Nanostructures have been grown using a catalyst-free synthesis on a Si substrate. Current-voltage characteristics display a top peak-to-valley ratio of 4.8 at 4.2 K and 2.2 at room temperature. The Esaki effect can be modulated-or even completely quenched-by field effect, by controlling the band bending profile along the azimuthal angle of the radial heterostructure. Hysteretic behavior is also observed in the presence of a suitable resistive load. Our results indicate that high-quality broken-gap devices can be obtained using Au-free growth.

Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon.

We report on the nucleation and growth mechanism of self-catalyzed InAs nanowires (NWs) grown on Si (111) substrates by chemical beam epitaxy. Careful choices of the growth parameters lead to In-rich conditions such that the InAs NWs nucleate from an In droplet and grow by the vapor-liquid-solid mechanism while sustaining an In droplet at the tip. As the growth progresses, new NWs continue to nucleate on the Si (111) surface causing a spread in the NW size distribution. The observed behavior in NW nucleation and growth is described within a suitable existing theoretical model allowing us to extract relevant growth parameters. We argue that these results provide useful guidelines to rationally control the growth of self-catalyzed InAs NWs for various applications.

Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis.

We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis, which allows one to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of hybrid Josephson junctions based on semiconducting nanowires coupled with high-temperature superconductors is discussed.

Catalyst-free growth of InAs nanowires on Si (111) by CBE.

We investigate a growth mechanism which allows for the fabrication of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. Our growth protocol consists of successive low-temperature (LT) nucleation and high-temperature growth steps. This method produces non-tapered InAs nanowires with controllable length and diameter. We show that InAs nanowires evolve from the islands formed during the LT nucleation step and grow truly catalyst-free, without any indium droplets at the tip. The impact of different growth parameters on the nanowire morphology is presented. In particular, good control over nanowire aspect ratio is demonstrated. A better understanding of the growth process is obtained through the development of a theoretical model combining the diffusion-induced growth scenario with some specific features of the catalyst-free growth mechanism, along with the analysis of the V/III flow ratio influencing material incorporation. As a result, we perform a full mapping of the nanowire morphology versus growth parameters which provides useful general guidelines on the self-induced formation of III-V nanowires on silicon.

Sub-micron lateral topography affects endothelial migration by modulation of focal adhesion dynamics.

Through the interaction with topographical features, endothelial cells tune their ability to populate target substrates, both in vivo and in vitro. Basal textures interfere with the establishment and maturation of focal adhesions (FAs) thus inducing specific cell-polarization patterns and regulating a plethora of cell activities that govern the overall endothelial function. In this study, we analyze the effect of topographical features on FAs in primary human endothelial cells. Reported data demonstrate a functional link between FA dynamics and cell polarization and spreading on structured substrates presenting variable lateral feature size. Our results reveal that gratings with 2 µm lateral periodicity maximize contact guidance. The effect is linked to the dynamical state of FAs. We argue that these results are readily applicable to the rational design of active surfaces at the interface with the blood stream.

Wharton's Jelly human mesenchymal stem cell contact guidance by noisy nanotopographies.

The development of biomaterials ensuring proper cell adhesion, polarization, migration and differentiation represents a true enabler for successful tissue-engineering applications. Surface nanostructuring was suggested as a promising method for improving cell-substrate interaction. Here, we study Wharton's Jelly human Mesenchymal Stem Cells (WJ-hMSC) interacting with nanogratings (NGs) having a controlled amount of nanotopographical noise (nTN). Our data demonstrate that unperturbed NGs induce cell polarization, alignment and migration along NG lines. The introduction of nTN dramatically modifies this behavior and leads to a marked loss of cell polarization and directional migration, even at low noise levels. High-resolution focal adhesions (FAs) imaging showed that this behavior is caused by the release of the geometrical vinculum imposed by the NGs to FA shaping and maturation. We argue that highly anisotropic nanopatterned scaffolds can be successfully exploited to drive stem cell migration in regenerative medicine protocols and discuss the impact of scaffold alterations or wear.

Nanowire-based field effect transistors for terahertz detection and imaging systems.

The development of self-assembled nanostructure technologies has recently opened the way towards a wide class of semiconductor integrated devices, with progressively optimized performances and the potential for a widespread range of electronic and photonic applications. Here we report on the development of field effect transistors (FETs) based on semiconductor nanowires (NWs) as highly-sensitive room-temperature plasma-wave broadband terahertz (THz) detectors. The electromagnetic radiation at 0.3 THz is funneled onto a broadband bow-tie antenna, whose lobes are connected to the source and gate FET electrodes. The oscillating electric field experienced by the channel electrons, combined with the charge density modulation by the gate electrode, results in a source-drain signal rectification, which can be read as a DC signal output. We investigated the influence of Se-doping concentration of InAs NWs on the detection performances, reaching responsivity values higher than 100 V W⁻¹, with noise-equivalent-power of ∼10⁻9 W Hz(⁻½). Transmission imaging experiments at 0.3 THz show the good reliability and sensitivity of the devices in a real practical application.

Hybrid InAs nanowire-vanadium proximity SQUID.

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of ∼ 2.5 K with reduced power dissipation. We show that our geometry allows one to obtain nearly-symmetric devices with very large magnetic field modulation of the critical current. All these properties make these devices attractive for sensitive magnetometry applications and quantum circuit implementation.

Coherent detection of electron dephasing.

We show that an Aharonov-Bohm ring with asymmetric electron injection can act as a coherent detector of electron dephasing. The presence of a dephasing source in one of the two arms of a moderately-to-highly asymmetric ring changes the response of the system from total reflection to complete transmission while preserving the coherence of the electrons propagating from the ring, even for strong dephasing. We interpret this phenomenon as an implementation of an interaction-free measurement.

Differential near-field scanning optical microscopy with THz quantum cascade laser sources.

We have realized a differential Near-field Scanning Optical Microscope (NSOM) working with subwavelength resolution in the THz spectral region. The system employs a quantum cascade laser emitting at lambda approximately 105 microm as source, and the method, differently from conventional NSOM, involves diffracting apertures with size comparable to the wavelength. This concept ensures a higher signal-to-noise level at the expense of an additional computational step. In the implementation here reported lambda/10 resolution has been achieved; present limiting factors are investigated through finite difference time domain simulations.

Manipulation and generation of supercurrent in out-of-equilibrium Josephson tunnel nanojunctions.

We demonstrate experimentally the manipulation of supercurrent in Al-AlOx-Ti Josephson tunnel junctions by injecting quasiparticles in a Ti island from two additional tunnel-coupled Al superconducting reservoirs. Both supercurrent enhancement and quenching with respect to equilibrium are achieved. We demonstrate cooling of the Ti line by quasiparticle injection from the normal state deep into the superconducting phase. A model based on heat transport and the nonmonotonic current-voltage characteristic of a Josephson junction satisfactorily accounts for our findings.

Filling factor dependence of the fractional quantum Hall effect gap.

We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu=1/3 and nu=2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an ideal 2D electron system, in the highest accessible magnetic fields, is proportional to q(-1) B(1/2).

Direct measurements of fractional quantum Hall effect gaps.

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases linearly with the magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

The optical visibility of graphene: interference colors of ultrathin graphite on SiO(2).

Monatomic layers of graphite are emerging as building blocks for novel optoelectronic devices. Experimental studies on a single graphite layer (graphene) are today possible since very thin graphite can be identified on a dielectric substrate using a normal optical microscope. We investigate the mechanism behind the strong visibility of graphite, and we discuss the importance of substrates and of the microscope objective used for the imaging.

Selective fluorescence recovery after bleaching of single E2GFP proteins induced by two-photon excitation.

We report the two-photon excitation and emission or a recently developed green fluorescent protein (GFP) mutant, E(2)GFP. Two main excitation bands are found at 780 and 870 nm. Blinking and irreversible and reversible bleaching were observed. Fluorescence blinking occurs in the millisecond range and has been ascribed to conversions between the neutral, anionic and dark zwitterionic states. Bleaching is observed after approximately 10 to 400 ms depending on the excitation power, and it is probably due to a conversion to a dark state. The striking feature of this GFP mutant is that the fluorescence can be recovered with very high efficiency only upon irradiation at 720 +/- 10 nm. This GFP mutant therefore seems promising as an almost permanent chromophore for two-photon excitation (TPE) microscopy or for applications in single-molecule memory arrays.

Multiphoton switching dynamics of single green fluorescent proteins.

Multi-photon driven photo-switching between dark and bright (fluorescent) states of a green fluorescent protein (GFP) mutant is demonstrated. A single-protein investigation shows the existence of two distinct bright states that display sharp two-photon cross-section bands peaked at 780 nm and at 870 nm. Fluorescence of these two species can be independently switched on and off. These results highlight a new photoconversion pathway for photochromic GFPs and can have significant applications in multi-photon confocal microscopy and in optical data-storage architectures.