A decouple-decomposition noise analysis model for closed-loop mode-localized tilt sensors.

The development of mode-localized sensors based on amplitude output metrics has attracted increasing attention in recent years due to the potential of such sensors for high sensitivity and resolution. Mode-localization phenomena leverage the interaction between multiple coupled resonant modes to achieve enhanced performance, providing a promising solution to overcome the limitations of traditional sensing technologies. Amplitude noise plays a key role in determining the resolution of mode-localized sensors, as the output metric is derived from the measured AR (amplitude ratio) within the weakly coupled resonator system. However, the amplitude noise originating from the weakly coupled resonator's closed-loop circuit has not yet been fully investigated. This paper presents a decouple-decomposition (DD) noise analysis model, which is applied to achieve high resolution in a mode-localized tilt sensor based on a weakly coupled resonator closed-loop circuit. The DD noise model separates the weakly coupled resonators using the decoupling method considering the nonlinearity of the resonators. By integrating the decoupled weakly coupled resonators, the model decomposes the weakly coupled resonator's closed-loop circuit into distinct paths for amplitude and phase noise analyses. The DD noise model reveals noise effects at various circuit nodes and models the system noise in the closed-loop circuit of the weakly coupled resonators. MATLAB/Simulink simulations verify the model's accuracy when compared to theoretical analysis. At the optimal operating point, the mode-localized tilt sensor achieves an input-referred instability of 3.91 × 10-4° and an input-referred AR of PSD of 2.01 × 10-4°/√Hz using the closed-loop noise model. This model is also applicable to other varieties of mode-localized sensors.

Analysis of the Thermally Induced Packaging Effects on the Frequency Drift of Micro-Electromechanical System Resonant Accelerometer.

Due to the working principle of MEMS resonant accelerometers, their thermally induced frequency drift is an inevitable practical issue for their extensive application. This paper is focused on reducing the thermally induced packaging effects on the frequency drift. A leadless ceramic chip carrier package with a stress-buffering layer was proposed for a MEMS resonant accelerometer, and the influences of packaging structure parameters on the frequency drift were investigated through finite element simulations and verified experimentally. Because of the thermal mismatch between dissimilar materials, the thermo-mechanical stress within the resonant beam leads to a change in the effective stiffness and causes the frequency drift to decrease linearly with increasing temperature. Furthermore, our investigations reveal that increasing the stress-buffering layer thickness and reducing the solder layer thickness can significantly minimize the thermo-mechanical stress within the resonant beam. As the neutral plane approaches the horizontal symmetry plane of the resonant beam when optimizing the packaging structure, the effects of the compressive and tensile stresses on the effective stiffness of the resonant beam will cancel each other out, which can dramatically reduce the frequency drift. These findings provide guidelines for packaging design through which to improve the temperature stability of MEMS resonant accelerometers.