Geodynamic subduction models constrained by deep earthquakes beneath the Japan Sea and eastern China.

Details of Pacific plate subduction under the Japan Sea and associated current seismicity remain challenging. Seismic tomography reveals a continuous slab dipping at ~30° down to ~600 km, and earthquake mechanisms point to down-dip compression. Further, the slab is lying at the 660-km discontinuity, and this zone is aseismic. We suggest that this pattern results from the slab's negative thermal buoyancy, resistance of the viscous lower mantle, and buoyancy forces associated with the phase transitions at 410 km and 660 km. Our model comprises an ageing subducting plate, nonlinear rheology and major phase transitions. The model explains the observed low dip angle of the slab and predicts a detailed stress pattern related to bending down to 450 km, followed by unbending as the slab is laid flat upon the 660 km boundary. Remarkably, in the bending/unbending regions, down-dip compression occurs close to the slab top/bottom, respectively. As only down-dip compression is observed, we argue that the earthquakes are mapping the top and bottom of the slab. The absence of seismicity in the flat-lying slab is explained by significantly lower stresses and higher temperatures. With this new knowledge, increasingly accurate seismic locations will considerably improve images of finite-extent slab geometry.

Boron-oxygen complex yields n-type surface layer in semiconducting diamond.

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021 cm-3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1-1.5 µm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B-O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

Elastic and mechanical softening in boron-doped diamond.

Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh's modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50-3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

Ultrahard stitching of nanotwinned diamond and cubic boron nitride in C2-BN composite.

Materials combining the hardness and strength of diamond with the higher thermal stability of cubic boron nitride (cBN) have broad potential value in science and engineering. Reacting nanodiamond with cBN at moderate pressures and high temperatures provides a pathway to such materials. Here we report the fabrication of Cx-BN nanocomposites, measuring up to 10 mm in longest dimension, by reacting nanodiamond with pre-synthesized cBN in a large-volume press. The nanocomposites consist of randomly-oriented diamond and cBN domains stitched together by sp(3)-hybridized C-B and C-N bonds, leading to p-type semiconductivity. Dislocations near the sutures accommodate lattice mismatch between diamond and cBN. Nanotwinning within both diamond and cBN domains further contributes to a bulk hardness ~50% higher than sintered cBN. The nanocomposite of C2-BN exhibits p-type semiconductivity with low activation energy and high thermal stability, making it a functional, ultrahard substance.

High-pressure radiative conductivity of dense silicate glasses with potential implications for dark magmas.

The possible presence of dense magmas at Earth's core-mantle boundary is expected to substantially affect the dynamics and thermal evolution of Earth's interior. However, the thermal transport properties of silicate melts under relevant high-pressure conditions are poorly understood. Here we report in situ high-pressure optical absorption and synchrotron Mössbauer spectroscopic measurements of iron-enriched dense silicate glasses, as laboratory analogues for dense magmas, up to pressures of 85 GPa. Our results reveal a significant increase in absorption coefficients, by almost one order of magnitude with increasing pressure to ~50 GPa, most likely owing to gradual changes in electronic structure. This suggests that the radiative thermal conductivity of dense silicate melts may decrease with pressure and so may be significantly smaller than previously expected under core-mantle boundary conditions. Such dark magmas heterogeneously distributed in the lower mantle would result in significant lateral heterogeneity of heat flux through the core-mantle boundary.