RESUMEN
Solution-processed silver nanowire networks are one of the promising candidates to replace a traditional indium tin oxide as next-generation transparent and flexible electrodes due to their ease of processing, moderate flexibility, high transparency, and low sheet resistance. To date, however, high stability of the nanowire networks remains a major challenge because the long-term usages of these electrodes are limited by their poor thermal and chemical stabilities. Existing methods for addressing this challenge mainly focus on protecting the nanowire network with additional layers that require vacuum processes, which can lead to an increment in manufacturing cost. Here, we report a straightforward strategy of a sol-gel processing as a fast and robust way to improve the stabilities of silver nanowires. Compared with reported nanoparticles embedded in nanowire networks, better thermal and chemical stabilities are achieved via sol-gel coating of TiO2 over the silver nanowire networks. The conformal surface coverage suppressed surface diffusion of silver atoms and prevented chemical corrosion from the environment. These results highlight the important role of the functional layer in providing better thermal and chemical stabilities along with improved electrical properties and mechanical robustness. The silver nanowire/TiO2 composite electrodes were applied as the source and drain electrodes for In2O3 thin-film transistors (TFTs) and the devices exhibited improved electrical performance annealed at 300 °C without the degradation of the electrodes. These key findings not only demonstrated a general and effective method to improve the thermal and chemical stabilities of metal nanowire networks but also provided a basic guideline toward rational design of highly efficient and robust composite electrodes.
RESUMEN
Thin film photovoltaic cells based on hybrid halide perovskite absorbers have emerged as promising candidates for next generation photovoltaics. Here, we have characterized and identified the defect energy distribution in the CH3NH3PbI3 perovskite using admittance spectroscopy, which reveals a deep defect state â¼0.16 eV above the valence band. According to theoretical calculations, the defect state is possibly attributed to iodine interstitials (Ii), which can become the non-radiative recombination centers in the absorber.
RESUMEN
A fully solution-processed high performance Cu2ZnSn(S,Se)4 (CZTSSe, kesterite) device has been demonstrated. It is based on the rational engineering of elemental spatial distributions in the bulk and particularly near the surface of the film from nanocrystal precursors. The nanocrystals are synthesized through a modified colloidal approach, with excellent solubility over a large compositional window, followed by a selenization process to form the absorber. The X-ray photoluminescence (XPS) depth profiling indicates an undesirable Sn-rich surface of the selenized film. An excessive Zn species was quantitatively introduced through nanocrystals precursor to correct the element distribution, and accordingly a positive correlation between the spatial composition in the bulk/surface film and the resulting device parameter is established. The enhanced device performance is associated with the reduced interfacial recombination. With a Zn content 1.6 times more than the stoichiometry; the optimized device, which is fabricated by employing a full solution process from the absorber to the transparent top electrode, demonstrates a performance of 8.6%. This composition-control approach through stoichiometric adjustments of nanocrystal precursors, and the developed correlation between the spatial composition and device performance may also benefit other multielement-based photovoltaics.
RESUMEN
Solution-processed metallic nanowire thin film is a promising candidate to replace traditional indium tin oxide as the next-generation transparent and flexible electrode. To date however, the performance of these electrodes is limited by the high contact resistance between contacting nanowires; so improving the point contacts between these nanowires remains a major challenge. Existing methods for reducing the contact resistance require either a high processing power, long treatment time, or the addition of chemical reagents, which could lead to increased manufacturing cost and damage the underlying substrate or device. Here, a nanoscale point reaction process is introduced as a fast and low-power-consumption way to improve the electrical contact properties between metallic nanowires. This is achieved via current-assisted localized joule heating accompanied by electromigration. Localized joule heating effectively targets the high-resistance contact points between nanowires, leading to the automatic removal of surface ligands, welding of contacting nanowires, and the reshaping of the contact pathway between the nanowires to form a more desirable geometry of low resistance for interwire conduction. This result shows the interplay between thermal and electrical interactions at the highly reactive nanocontacts and highlights the control of the nanoscale reaction as a simple and effective way of turning individual metallic nanowires into a highly conductive interconnected nanowire network. The temperature of the adjacent device layers can be kept close to room temperature during the process, making this method especially suitable for use in devices containing thermally sensitive materials such as polymer solar cells.
RESUMEN
Successful implementation of molecular solution processing from a homogeneous and stable precursor would provide an alternative, robust approach to process multinary compounds compared with physical vapor deposition. Targeting deposition of chemically clear, high quality crystalline films requires specific molecular structure design and solvent selection. Hydrazine (N2H4) serves as a unique and powerful medium, particularly to incorporate selected metallic elements and chalcogens into a stable solution as metal chalcogenide complexes (MCC). However, not all the elements and compounds can be easily dissolved. In this manuscript, we demonstrate a paradigm to incorporate previously insoluble transitional-metal elements into molecular solution as metal-atom hydrazine/hydrazine derivative complexes (MHHD), as exemplified by dissolving of the zinc constituent as Zn(NH2NHCOO)2(N2H4)2. Investigation into the evolution of molecular structure reveals the hidden roadmap to significantly enrich the variety of building blocks for soluble molecule design. The new category of molecular structures not only set up a prototype to incorporate other elements of interest but also points the direction for other compatible solvent selection. As demonstrated from the molecular precursor combining Sn-/Cu-MCC and Zn-MHHD, an ultrathin film of copper zinc tin sulfide (CZTS) was deposited. Characterization of a transistor based on the CZTS channel layer shows electronic properties comparable to CuInSe2, confirming the robustness of this molecular solution processing and the prospect of earth abundant CZTS for next generation photovoltaic materials. This paradigm potentially outlines a universal pathway, from individual molecular design using selected chelated ligands and combination of building blocks in a simple and stable solution to fundamentally change the way multinary compounds are processed.
RESUMEN
A novel solution-based approach is presented to process earth-abundant Cu(2)ZnSn(S,Se)(4) absorbers using fully dissolved CZTS precursors in which each of the elemental constituents intermix on a molecular scale. This method enables the low-temperature processing of chemically clean kesterite films with excellent homogeneity. The high performance of resulting optoelectronic devices represents a chance to extend the impact of CZTS into the next chapter of thin-film solar cells.
RESUMEN
A silver nanowire-indium tin oxide nanoparticle composite and its successful application to fully solution processed CuInSe(2) solar cells as a window layer are demonstrated, effectively replacing the traditionally sputtered both intrinsic zinc oxide and indium tin oxide layers. The devices utilizing the nanocomposite window layer demonstrate photovoltaic parameters equal to or even beyond those with sputtered intrinsic zinc oxide and indium tin oxide contacts.
