RESUMEN
We report femtosecond pulses from a passive C-band two-section AlGaInAs/InP mode-locked laser with a monolithically integrated passive waveguide made by quantum well intermixing. Without any external pulse compression, Lorentzian pulses are generated at a repetition frequency of ~38 GHz with 490 fs pulse duration, which is, to the best of our knowledge, the shortest pulse from any directly electrically pumped quantum well semiconductor mode-locked laser. The mode-locking range is relatively large and the ultranarrow pulse width is very stable over a broad range of driving conditions.
RESUMEN
High output power 40 GHz 1.55 µm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.
RESUMEN
We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 µm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.
RESUMEN
The monolithic integration of four 1.5 µm range AlGaInAs/InP distributed feedback lasers with a 4×1 multimode-interference optical combiner, a curved semiconductor optical amplifier, and an electro-absorption modulator using relatively simple technologies--sidewall grating and quantum well intermixing--has been demonstrated. The four channels span the wavelength range of 1530 to 1566 nm with a channel spacing of 12 nm. The epitaxial structure was designed to produce a far-field pattern as small as 21.2°×25.1°, producing a coupling efficiency with an angled-end single-mode fiber at twice that of a conventional device design.
RESUMEN
We demonstrate a novel (to the best of our knowledge) 40 GHz passively mode-locked AlGaInAs/InP 1.55 µm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2 ps (10 kHz-100 MHz), and a radio frequency linewidth of 25 kHz.
RESUMEN
We present a 10 GHz 1.55 µm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single mode fiber, compared to the conventional five-quantum-well MLLs.
RESUMEN
We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 µm AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81.
