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1.
Mar Pollut Bull ; 85(2): 733-7, 2014 Aug 30.
Artículo en Inglés | MEDLINE | ID: mdl-24928455

RESUMEN

Drinking water shortage has become worse in recent decades. A new capacitive deionization (CDI) method for increasing water supplies through the effective desalination of seawater has been developed. Silver as nano Ag and Ag@C which was prepared by carbonization of the Ag(+)-ß-cyclodextrin complex at 573 K for 30 min can add the antimicrobial function into the CDI process. The Ag@C and Ag nanoparticles dispersed on reduced graphene oxide (Ag@C/rGO and nano Ag/rGO) were used as the CDI electrodes. The nano Ag/rGO and Ag@C/rGO electrodes can reduce the charging resistant, and enhance the electrosorption capability. Better CDI efficiencies with the nano Ag/rGO and Ag@C/rGO electrodes can therefore be obtained. When reversed the voltage, the electrodes can be recovered up to 90% within 5 min. This work presents the feasibility for the nano Ag and Ag@C on rGO electrodes applied in CDI process to produce drinking water from seawater or saline water.


Asunto(s)
Antiinfecciosos/química , Nanopartículas del Metal/química , Agua de Mar/química , Plata/química , Capacidad Eléctrica , Impedancia Eléctrica , Electrodos , Escherichia coli/metabolismo , Grafito/química , Óxidos/química , Sales (Química) , Cloruro de Sodio/análisis , Espectroscopía Infrarroja por Transformada de Fourier , Temperatura , Purificación del Agua/métodos , Difracción de Rayos X , beta-Ciclodextrinas/química
2.
ACS Appl Mater Interfaces ; 2(6): 1780-4, 2010 Jun.
Artículo en Inglés | MEDLINE | ID: mdl-20499898

RESUMEN

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H(BC)) and the hydrogen trapped at a O vacancy (H(O)), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H(BC) atoms gradually diffuse out of the ZnO films and part of them are converted into H(O), which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

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