RESUMEN
Using non-equilibrium molecular dynamics simulations, we have studied the effect of disorder on the thermal conductivity of two-dimensional (2D) C1-xNx alloys. We find that the thermal conductivity not only depends on the substitution concentration of nitrogen, but also strongly depends on the disorder distribution. A general linear relationship is revealed between the thermal conductivity and the participation ratio of phonons in 2D alloys. Localization mode analysis further indicates that the thermal conductivity variation in the ordered alloys can be attributed to the number of inequivalent atoms. As for the disordered alloys, we find that the thermal conductivity variation can be described by a simple linear formula with the disorder degree and the substitution concentration. The present study suggests some general guidance for phonon manipulation and thermal engineering in low dimensional alloys.
RESUMEN
A high-frequency optical phonon mode of SrTiO3 (STO) was found to assist the high-temperature superconductivity observed recently at the interface between monolayer FeSe and STO substrate. However, the origin of this mode is not clear. Through first-principles calculations, we find that there is a novel polar phonon mode on the surface layers of the STO substrate, which does not exist in the STO crystals. The oxygen vacancies near the FeSe/STO interface drives the dispersion of this phonon mode to be flat and lowers its energy, whereas the charge transfer between STO substrate and FeSe monolayer further reduces its energy to 81 meV. This energy is in good agreement with the experimental value fitted by Lee et al. for the phonon mode responsible for the observed replica band separations and the increased superconducting gap. The oxygen-vacancy-induced flat and polar phonon mode provides clues for understanding the origin of high Tc superconductivity at the FeSe/STO interface.
RESUMEN
We have developed a new global optimization method for the determination of the interface structure based on the differential evolution algorithm. Here, we applied this method to search for the ground state atomic structures of the grain boundary (GB) between armchair and zigzag oriented graphene. We find two new grain boundary structures with a considerably lower formation energy of about 1 eV nm(-1) than those of the previously widely used structural models. We also systematically investigate the symmetric GBs with the GB angle ranging from 0° to 60°, and find some new GB structures. Surprisingly, for an intermediate GB angle, the formation energy does not depend monotonically on the defect concentration. We also discovered an interesting linear relationship between the GB density and the GB angle. Our new method provides an important novel route for the determination of GB structures and other interface structures, and our comprehensive study on GB structures could provide new structural information and guidelines to this area.
