Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology.

This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS image sensor technology, one with STI and the other without STI between its anode and cathode. With TCAD simulations and measurements, we have clearly demonstrated that the SPAD without STI enables a dramatic decrease in DCR by more than three orders of magnitude without suffering from the lateral leakage current between the anode and cathode. By excluding the STI from the device, the proposed SPAD also achieves a negligible APP while the SPAD with STI shows a very high APP of 92%. Thanks to the low-noise performance, the proposed SPAD becomes operable with higher excess bias voltage so that it achieves good photon detection probability, 58.3% at 500 nm and 3% at 940 nm, and timing jitter, 71 ps full width at half maximum at 670 nm, when the reverse bias voltage is 17 V.

Wireless graphene-based thermal patch for obtaining temperature distribution and performing thermography.

Thermal imaging provides information regarding the general condition of the human body and facilitates the diagnosis of various diseases. Heat therapy or thermotherapy can help in the treatment of injuries to the skin tissue. Here, we report a wearable thermal patch with dual functions of continuous skin temperature sensing and thermotherapy for effective self-care treatment. This system consists of a graphene-based capacitive sensor, a graphene thermal pad, and a flexible readout board with a wireless communication module. The wearable sensor continuously monitors the temperature variation over a large area of the skin (3 × 3cm2) with high resolution and sensitivity and performs thermotherapy via the graphene-based heater mounted at the bottom of the device. Animal studies prove that the proposed system can be used to diagnose various diseases. This technology could be useful in the development of convenient and wearable health care devices.

MoS2/Graphene Photodetector Array with Strain-Modulated Photoresponse up to the Near-Infrared Regime.

MoS2, an emerging material in the field of optoelectronics, has attracted the attention of researchers owing to its high light absorption efficiency, even as an atomically thin layer. However, the covered spectra of the reported MoS2-based photodetectors are restricted to the visible range owing to their electronic bandgap (∼1.9 eV). Strain engineering, which modulates the bandgap of a semiconductor, can extend the application coverage of MoS2 to the infrared spectral range. The shrinkage of the bandgap because of the tensile strain on MoS2 enhances the photoresponsivity in the visible range and extends its sensing capability beyond its fundamental absorption limit. Herein, we report a graphene/MoS2/graphene metal-semiconductor-metal photodetector (PD) array with a strain-modulated photoresponse up to the spectral range of the near-infrared (NIR). The MoS2 PD array on a flexible substrate was stretched in the biaxial direction to a tensile strain level of 1.19% using a pneumatic bulging process. The MoS2-based line-scanning system was implemented by digitizing the output photocurrent of the strained MoS2 linear array with a low-noise complementary metal-oxide-semiconductor (CMOS) readout integrated circuit (IC) and successfully captured vis-NIR images in foggy conditions. Therefore, we extended the application of the MoS2 PD array to the NIR regime and demonstrated its use in real-life imaging systems.

Long-term Intracellular Recording of Optogenetically-induced Electrical Activities using Vertical Nanowire Multi Electrode Array.

Continuous recording of intracellular activities in single cells is required for deciphering rare, dynamic and heterogeneous cell responses, which are missed by population or brief single-cell recording. Even if the field of intracellular recording is constantly proceeding, several technical challenges are still remained to conquer this important approach. Here, we demonstrate long-term intracellular recording by combining a vertical nanowire multi electrode array (VNMEA) with optogenetic stimulation to minimally disrupt cell survival and functions during intracellular access and measurement. We synthesized small-diameter and high-aspect-ratio silicon nanowires to spontaneously penetrate into single cells, and used light to modulate the cell's responsiveness. The light-induced intra- and extracellular activities of individual optogenetically-modified cells were measured simultaneously, and each cell showed distinctly different measurement characteristics according to the cell-electrode configuration. Intracellular recordings were achieved continuously and reliably without signal interference and attenuation over 24 hours. The integration of two controllable techniques, vertically grown nanowire electrodes and optogenetics, expands the strategies for discovering the mechanisms for crucial physiological and dynamic processes in various types of cells.

A CMOS VEGF Sensor for Cancer Diagnosis Using a Peptide Aptamer-Based Functionalized Microneedle.

This paper presents the first CMOS Vascular Endothelial Growth Factor (VEGF) sensor for cancer diagnosis directly from human blood. The sensor incorporates a peptide aptamer-based microneedle that allows the detection of electrochemical reactions with VEGF. This results in a capacitance change between the microneedles and then reads out by a two-step capacitance-to-digital converter (CDC). The proposed two-step CDC consists of a coarse 5b slope ADC and a fine 14b continuous-time delta-sigma modulator (CTDSM). During slow peptide-binding, the slope ADC performs a coarse conversion and the results are used to adjust the current level of the stimulator. After settling of the peptide-binding, based on an adjusted stimulation current, the CTDSM measures the small capacitance changes of the sensor. The prototype chip is fabricated in a 65-nm CMOS process, occupying a 0.87 mm 2 active area. The power consumption is 270 muW. Thanks to the two-step approach, this work achieves a wide dynamic range of 18.3b, covering a large sensor-to-sensor variation. It also achieves a peak resolution of 13.7b, while maintaining errors in 1 to 100 nF baseline capacitance. The overall sensor system successfully detects the VEGF in both phosphate-buffered saline (PBS) and human blood serum. Without the use of precision instruments, this work achieves a resolution of 15 fM [Formula: see text] in range of 0.1 to 1000 pM and denotes the clear VEGF selectivity at 40× in PBS and 5× in the blood serum compared to other proteins (IgG, Con A, and cholera toxin).

Real-Time Detection of Markers in Blood.

The real-time selective detection of disease-related markers in blood using biosensors has great potential for use in the early diagnosis of diseases and infections. However, this potential has not been realized thus far due to difficulties in interfacing the sensor with blood and achieving transparent circuits that are essential for detecting of target markers (e.g., protein, ions, etc.) in a complex blood environment. Herein, we demonstrate the real-time detection of a specific protein and ion in blood without a skin incision. Complementary metal-oxide-semiconductor technology was used to fabricate silicon micropillar array (SiMPA) electrodes with a height greater than 600 µm, and the surface of the SiMPA electrodes was functionalized with a self-assembling artificial peptide (SAP) as a receptor for target markers in blood, i.e., cholera toxin (CTX) and mercury(II) ions (Hg). The detection of CTX was investigated in both in vitro (phosphate-buffered saline and human blood serum, HBO model) and in vivo (mouse model) modes via impedance analysis. In the in vivo mode, the SiMPA pierces the skin, comes into contact with the blood system, and creates comprehensive circuits that include all the elements such as electrodes, blood, and receptors. The SiMPA achieves electrically transparent circuits and, thus, can selectively detect CTX in the blood in real time with a high sensitivity of 50 pM and 5 nM in the in vitro and in vivo modes, respectively. Mercury(II) ions can also be detected in both the in vitro and the in vivo modes by changing the SAP. The results illustrate that a robust sensor that can detect a variety of molecular species in the blood system in real time that will be helpful for the early diagnosis of disease and infections.

A 0.9m Long 0.5gf Resolution Catheter-based Force Sensor for Real-Time Force Monitoring of Cardiovascular Surgery.

This paper presents a 0.9m long capacitive force sensor for a catheter integration, which measures a contact force to inner vessel wall or organs with a resolution of 0.5gf. The force sensor is implemented with a thin flexible printed circuit board (FPCB) encapsulated by a force sensitive medium, multilayer polydimethylsiloxane (PDMS). The parasitic capacitance $( \mathrm {C}_{P})$ inherent in long catheters significantly degrades the sensing accuracy of capacitive force sensors. To account for this, this work proposes a sensor interface with $\mathrm {C}_{P}$ canceller. By removing the 348pF (91.5%) of $\mathrm {C}_{\mathrm{P}}$with the $\mathrm {C}_{\mathrm{P}}$ canceller, the capacitive force sensor achieves a capacitance resolution of 16aF equivalent to a force error of 0.5gf, which is a $10 \times $ improvement compared to the conventional sensor interface. The proposed force sensor offers great potential for real-time force monitoring of cardiovascular surgery.

A Parasitic Insensitive Catheter-Based Capacitive Force Sensor for Cardiovascular Diagnosis.

This paper presents a catheter-based capacitive force sensor interface for cardiovascular diagnosis. The force sensor is implemented on a flexible printed circuit board (FPCB) substrate with a force-sensitive polydimethylsiloxane (PDMS), and a force-induced change in a capacitance of the sensor is measured by a precision capacitive sensor interface. To recover the performance degradation caused by the large parasitic capacitance ${\rm C}_{\rm P}$ of a long catheter, we present a parasitic insensitive analog front-end (AFE) with active ${\rm C}_{\rm P}$ cancellation, which employs a charge amplifier and a negative capacitor at the virtual ground of the charge amplifier. The prototype sensor was measured with a force loader in whole blood. The proposed AFE successfully cancels ${\rm C}_{\rm P}$ of 348 pF in a 0.9-m-long sensor and measurement results show the SNR of 53.8 dB and the capacitance resolution of 16 aF, a 19.6 dB improvement by canceling nonideal effect of ${\rm C}_{\rm P}$ . This corresponds to a force resolution of 2.22 gf, which is 9.29 $\times$ reduction compared to the work without the ${\rm C}_{\rm P}$ cancellation. The proposed sensor interface is insensitive to ${\rm C}_{\rm P}$ from hundreds to 1-nF level, and the force-dependent stiffness of two different tissues has been successfully distinguished with an ex-vivo experiment. The proposed sensor interface enables the integration of capacitive force sensors in a smart catheter.

Transparent, Flexible, Conformal Capacitive Pressure Sensors with Nanoparticles.

The fundamental challenge in designing transparent pressure sensors is the ideal combination of high optical transparency and high pressure sensitivity. Satisfying these competing demands is commonly achieved by a compromise between the transparency and usage of a patterned dielectric surface, which increases pressure sensitivity, but decreases transparency. Herein, a design strategy for fabricating high-transparency and high-sensitivity capacitive pressure sensors is proposed, which relies on the multiple states of nanoparticle dispersity resulting in enhanced surface roughness and light transmittance. We utilize two nanoparticle dispersion states on a surface: (i) homogeneous dispersion, where each nanoparticle (≈500 nm) with a size comparable to the visible light wavelength has low light scattering; and (ii) heterogeneous dispersion, where aggregated nanoparticles form a micrometer-sized feature, increasing pressure sensitivity. This approach is experimentally verified using a nanoparticle-dispersed polymer composite, which has high pressure sensitivity (1.0 kPa-1 ), and demonstrates excellent transparency (>95%). We demonstrate that the integration of nanoparticle-dispersed capacitor elements into an array readily yields a real-time pressure monitoring application and a fully functional touch device capable of acting as a pressure sensor-based input device, thereby opening up new avenues to establish processing techniques that are effective on the nanoscale yet applicable to macroscopic processing.

Graphene-Based Three-Dimensional Capacitive Touch Sensor for Wearable Electronics.

The development of input device technology in a conformal and stretchable format is important for the advancement of various wearable electronics. Herein, we report a capacitive touch sensor with good sensing capabilities in both contact and noncontact modes, enabled by the use of graphene and a thin device geometry. This device can be integrated with highly deformable areas of the human body, such as the forearms and palms. This touch sensor detects multiple touch signals in acute recordings and recognizes the distance and shape of the approaching objects before direct contact is made. This technology offers a convenient and immersive human-machine interface and additional potential utility as a multifunctional sensor for emerging wearable electronics and robotics.

Enhanced Neurite Outgrowth by Intracellular Stimulation.

Electrical stimulation through direct electrical activation has been widely used to recover the function of neurons, primarily through the extracellular application of thin film electrodes. However, studies using extracellular methods show limited ability to reveal correlations between the cells and the electrical stimulation due to interference from external sources such as membrane capacitance and culture medium. Here, we demonstrate long-term intracellular electrical stimulation of undamaged pheochromocytoma (PC-12) cells by utilizing a vertical nanowire electrode array (VNEA). The VNEA was prepared by synthesizing silicon nanowires on a Si substrate through a vapor-liquid-solid (VLS) mechanism and then fabricating them into electrodes with semiconductor nanodevice processing. PC-12 cells were cultured on the VNEA for 4 days with intracellular electrical stimulation and then a 2-day stabilization period. Periodic scanning via two-photon microscopy confirmed that the electrodes pierced the cells without inducing damage. Electrical stimulation through the VNEA enhances cellular differentiation and neurite outgrowth by about 50% relative to extracellular stimulation under the same conditions. VNEA-mediated stimulation also revealed that cellular differentiation and growth in the cultures were dependent on the potential used to stimulate them. Intracellular stimulation using nanowires could pave the way for controlled cellular differentiation and outgrowth studies in living cells.

A two-step A/D conversion and column self-calibration technique for low noise CMOS image sensors.

In this paper, a 120 frames per second (fps) low noise CMOS Image Sensor (CIS) based on a Two-Step Single Slope ADC (TS SS ADC) and column self-calibration technique is proposed. The TS SS ADC is suitable for high speed video systems because its conversion speed is much faster (by more than 10 times) than that of the Single Slope ADC (SS ADC). However, there exist some mismatching errors between the coarse block and the fine block due to the 2-step operation of the TS SS ADC. In general, this makes it difficult to implement the TS SS ADC beyond a 10-bit resolution. In order to improve such errors, a new 4-input comparator is discussed and a high resolution TS SS ADC is proposed. Further, a feedback circuit that enables column self-calibration to reduce the Fixed Pattern Noise (FPN) is also described. The proposed chip has been fabricated with 0.13 µm Samsung CIS technology and the chip satisfies the VGA resolution. The pixel is based on the 4-TR Active Pixel Sensor (APS). The high frame rate of 120 fps is achieved at the VGA resolution. The measured FPN is 0.38 LSB, and measured dynamic range is about 64.6 dB.