Photoluminescence studies of nitrogen-vacancy and silicon-vacancy centers transformation in CVD diamond.

In this study, the low-temperature micro-photoluminescence (PL) technology was employed to investigate the transformation of nitrogen-vacancy (NV), silicon-vacancy (SiV) centers in diamond crystal. Results showed that the NV and SiV luminescence were controlled by electron irradiation followed by thermal annealing. Both centers vanished together with the emergence of neutral single vacancy (GR1 center) after 200 keV electron irradiation. Interstitial related defects and vacancies were activated to diffuse by annealing (above ∼400 and 700 °C, respectively). The vacancies migrated to be captured by N and Si atoms due to the strain fields around the atoms attracted vacancies, and the NV and SiV centers appeared again in the PL spectra. In addition, compared the annealing behavior with NV center, the new emission at 639.7 nm was attributed to the nitrogen combined with carbon interstitials.

Effect of Ca addition on the microstructure and mechanical properties of as-cast Mg-Sm alloys.

This study investigated the effect of Ca addition on the microstructure and mechanical properties of as-cast Mg-4Sm alloys. The addition of 1.0 wt% Ca led to a significant grain refinement of Mg-4.0Sm alloys owing to the formation of rod-like Mg2Ca phases that acted as active nucleates for the Mg matrix. The as-cast Mg-4.0Sm-1.0Ca alloy showed the smallest grain size at 45 µm. Furthermore, the Mg-4.0Sm-1.0Ca alloy exhibited greater hardness, higher tensile strength, and higher yield tensile strength and elongation than the other two alloys with different Ca contents. These results were attributed to the grain refinement and precipitation strengthening of the Mg2Ca and Mg41Sm5 phases. Microsc. Res. Tech. 79:707-711, 2016. © 2016 Wiley Periodicals, Inc.

Location Dependence of Mass Sensitivity for Acoustic Wave Devices.

It is introduced that the mass sensitivity (Sm) of an acoustic wave (AW) device with a concentrated mass can be simply determined using its mode shape function: the Sm is proportional to the square of its mode shape. By using the Sm of an AW device with a uniform mass, which is known for almost all AW devices, the Sm of an AW device with a concentrated mass at different locations can be determined. The method is confirmed by numerical simulation for one type of AW device and the results from two other types of AW devices.

Mass Load Distribution Dependence of Mass Sensitivity of Magnetoelastic Sensors under Different Resonance Modes.

Magnetoelastic sensors as an important type of acoustic wave sensors have shown great promise for a variety of applications. Mass sensitivity is a key parameter to characterize its performance. In this work, the effects of mass load distribution on the mass sensitivity of a magnetoelastic sensor under different resonance modes were theoretically investigated using the modal analysis method. The results show that the mass sensitivity and "nodal point" positions are related to the point displacement, which is determined by the motion patterns. The motion patterns are affected by resonance modes and mass load distribution. Asymmetrical mass load distribution causes the motion patterns lose symmetry and leads to the shift of "nodal point". The mass sensitivity changing with mass load distribution behaves like a sine wave with decaying amplitude and the minimum mass sensitivity appears at the first valley. This study provides certain theoretical guidance for optimizing the mass sensitivity of a magnetoelastic sensor or other acoustic wave based sensors.