Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems.

In this study, we investigate the coexistence of short- and long-term memory effects owing to the programmable retention characteristics of a two-dimensional Au/MoS2/Au atomristor device and determine the impact of these effects on synaptic properties. This device is constructed using bilayer MoS2 in a crossbar structure. The presence of both short- and long-term memory characteristics is proposed by using a filament model within the bilayer transition-metal dichalcogenide. Short- and long-term properties are validated based on programmable multilevel retention tests. Moreover, we confirm various synaptic characteristics of the device, demonstrating its potential use as a synaptic device in a neuromorphic system. Excitatory postsynaptic current, paired-pulse facilitation, spike-rate-dependent plasticity, and spike-number-dependent plasticity synaptic applications are implemented by operating the device at a low-conductance level. Furthermore, long-term potentiation and depression exhibit symmetrical properties at high-conductance levels. Synaptic learning and forgetting characteristics are emulated using programmable retention properties and composite synaptic plasticity. The learning process of artificial neural networks is used to achieve high pattern recognition accuracy, thereby demonstrating the suitability of the use of the device in a neuromorphic system. Finally, the device is used as a physical reservoir with time-dependent inputs to realize reservoir computing by using short-term memory properties. Our study reveals that the proposed device can be applied in artificial intelligence-based computing applications by utilizing its programmable retention properties.

Editorial for the Special Issue on the Progress of Emerging Hardware Development for Post-Moore's Computing.

The potential of machine learning and novel computing architecture can be exploited in the immediate future if more efficient hardware is developed that meets the special requirements of bio-inspired computing or unconventional computing schemes [...].

A feasibility investigation of a pilot-scale bioelectrochemical coupled anaerobic digestion system with centric electrode module for real membrane manufacturing wastewater treatment.

The large-scale application of bioelectrochemical coupled anaerobic digestion (BES-AD) is limited by the matching of electrode configuration and the applicability of real wastewater. In this study, a pilot-scale BES-AD system with an effective system volume of 5 m3 and a 1 m3 volume of a carbon fiber brush electrode module was constructed and tested for treatment of the membrane manufacturing wastewater. The results showed that the BOD5/COD of the wastewater was increased from 0.238 to 0.398 when the applied voltage was 0.9 V. The pollutants such as N, N-Dimethylacetamide and glycerol in wastewater were degraded significantly. The microorganisms in the electrode modules were spatially enriched. The fermenters (Norank_f__ML635J-40_aquatic_group, 6.55 %; unclassified_f__Propionibacteriaceae, 5.25 %) and degraders (Corynebacterium, 29.31 %) were mostly enriched at the bottom, while electroactive bacteria (Pseudomonas, 29.39 %, Geobacter, 7.86 %) were mostly enriched at the top. Combined with the economical construction and operation cost ($1708.8/m3 and $0.76/m3) of the BES-AD system.

The microbial synergy and response mechanisms of hydrolysis-acidification combined microbial electrolysis cell system with stainless-steel cathode for textile-dyeing wastewater treatment.

Microbial electrolysis cell (MEC) has been existing problems such as poor applicability to real wastewater and lack of cost-effective electrode materials in the practical application of refractory wastewater. A hydrolysis-acidification combined MEC system (HAR-MECs) with four inexpensive stainless-steel and conventional carbon cloth cathodes for the treatment of real textile-dyeing wastewater, which was fully evaluated the technical feasibility in terms of parameter optimization, spectral analysis, succession and cooperative/competition effect of microbial. Results showed that the optimum performance was achieved with a 12 h hydraulic retention time (HRT) and an applied voltage of 0.7 V in the HAR-MEC system with a 100 µm aperture stainless-steel mesh cathode (SSM-100 µm), and the associated optimum BOD5/COD improvement efficiency (74.75 ± 4.32 %) and current density (5.94 ± 0.03 A·m-2) were increased by 30.36 % and 22.36 % compared to a conventional carbon cloth cathode. The optimal system had effective removal of refractory organics and produced small molecules by electrical stimulation. The HAR segment could greatly alleviate the imbalance between electron donors and electron acceptors in the real refractory wastewater and reduce the treatment difficulty of the MEC segment, while the MEC system improved wastewater biodegradability, amplified the positive and specific interactions between degraders, fermenters and electroactive bacteria due to the substrate complexity. The SSM-100 µm-based system constructed by phylogenetic molecular ecological network (pMEN) exhibited moderate complexity and significantly strong positive correlation between electroactive bacteria and fermenters. It is highly feasible to use HAR-MEC with inexpensive stainless-steel cathode for textile-dyeing wastewater treatment.

Deciphering physicochemical properties and enhanced microbial electron transfer capacity by magnetic biochar.

Magnetic biochar is important for improving the electron transfer capacity (ETC) of microorganisms in wastewater treatment. In this study, three magnetic biochar under different pyrolysis temperatures (300, 500 and 700 °C) were prepared by co-precipitation, and their characteristics and impacts on mediating microbial ETC were investigated. Results indicated that magnetic biochar had a higher capacitance and conductivity than pyrolytic biochar, with the largest specific capacitance of 14.7F/g for FCS700 (magnetic biochar prepared at 700 °C). The addition of magnetic biochar could improve the nitrogen removal efficiency of a sludge-biochar system. The electron transfer resistance (Rct) of magnetic biochar was lower than pyrolytic biochar by 25.5 % (300 °C), 19.7 % (500 °C), and 11.6 % (700 °C), respectively. The structure of the microbial community in the sludge-biochar system differed significantly. Spearman correlation suggested that the electrochemical properties of biochar were an important factor affecting the structure of the microbial community.

Small biochar addition enhanced anammox granular sludge system for practical wastewater treatment: Performance and microbial community.

Anaerobic ammonium oxidation (Anammox) granular sludge (AnGS) has poor strength and is prone to disintegration under complex environmental conditions, especially in the presence of complex organic carbon, which renders the Anammox process instable. Herein, with a mixture of landfill leachate and domestic sewage as wastewater, the effect on the properties of AnGS with two small particle size (0.1-0.2 mm) biochars (coconut and peach biochars) addition were investigated at different COD concentrations (150 mg·L-1, 200 mg·L-1, and 250 mg·L-1), as well as at different BOD/TN (B/N) (0.3 and 0.5). Results showed that the nitrogen removal efficiencies decreased from 89 % to 72 % as the COD concentration increased by 100 mg·L-1, while peach biochar reactor had better nitrogen removal performance. Excessive organic carbon supply inhibits AnAOB proliferation and B/N had the most significant effect on AnAOB (p < 0.05). The Polymerase Chain Reaction (PCR) indicated peach biochar reactor get higher activity of anammox-related functional genes (hzsA, hdh).

Bioelectrochemical systems with a cathode of stainless-steel electrode for treatment of refractory wastewater: Influence of electrode material on system performance and microbial community.

The large-scale application of the bioelectrochemical system (BES) is limited by the cost-effective electrode materials. In this study, five kinds of stainless-steel materials were used as the cathode of the BES coupled with anaerobic digestion (BES-AD) for the treatment of diluted N, N-dimethylacetamide (DMAC) wastewater. Compared with a carbon-cloth cathode, BES-AD with a stainless-steel cathode had more engineering due to its low cost, although the operating efficiencies were slightly inferior. Stainless-steel mesh with a 100 µm aperture (SSM-100 µm) was the most cost-effective electrode and the implanted BES exhibited better COD removal efficiency, electrochemical performance and biodegradability. Analysis of microbial community revealed the synergetic effect between exoelectrogen and fermentative bacteria had been strengthened in the SSM-100 µm cathode biofilm. Function analysis of the microbial community based on PICRUSt predicted metagenomes revealed that the metabolic pathways of xenobiotics biodegradation and metabolism in the SSM-100 µm cathode were stimulated.

Start-up of Anammox systems with different biochar amendment: Process characteristics and microbial community.

As the 'go-to' process when it comes to biological nitrogen removal from wastewaters in recent years, the Anammox process has undergone lots of investigations in order to optimize its performance. In evaluating the effect of distinct biochar types at different concentrations on the Anammox startup process, as well as analyze their corresponding influence on the microbial community structure, three additives (coconut, peach, and bamboo) at either 5%, 10%, or 15% respectively were amended in various Anammox EGSB setups. (i). The 5% coconut biochar amendment resulted in the fastest startup of 46 days with an average ammonium removal efficiency of 96% whereas the control setup took 69 days. Thus, a more robust and cost effective Anammox process could be realized on an industrial scale. (ii) The Illumina high-throughput sequencing of the collected sludge samples indicated that the amendment with distinct biochar resulted in varied prevailing microbial communities in the respective setups. (iii) Proteobacteria was the dominant microbial community. (iv) However, two Anammox bacteria species, Candidatus Brocadia and Candidatus Jettenia were identified, with relative abundances of 0-4.72% and 0-6.23% respectively. The results from this study illustrate the correlation between Anammox reactor performance (startup and nitrogen removal efficiency), type and concentration of biochar amendment employed, as well as microbial community succession.

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions.

The sneak path current (SPC) is the inevitable issue in crossbar memory array while implementing high-density storage configuration. The crosstalks are attracting much attention, and the read accuracy in the crossbar architecture is deteriorated by the SPC. In this work, the sneak path current problem is observed and investigated by the electrical experimental measurements in the crossbar array structure with the half-read scheme. The read margin of the selected cell is improved by the bilayer stacked structure, and the sneak path current is reduced ~20% in the bilayer structure. The voltage-read stress-induced read margin degradation has also been investigated, and less voltage stress degradation is showed in bilayer structure due to the intrinsic nonlinearity. The oxide-based bilayer stacked resistive random access memory (RRAM) is presented to offer immunity toward sneak path currents in high-density memory integrations when implementing the future high-density storage and in-memory computing applications.

[Characteristics of ANAMMOX Granular Sludge and Differences in Microbial Community Structure Under Different Culture Conditions].

Anaerobic ammonium oxidation (ANAMMOX) granular sludge was cultured during different operating conditions by an expanded granular sludge bed (EGSB) reactor and up-flow anaerobic sludge bed (UASB) reactors, and the characteristics of the granular sludge and microbial community were compared. The results showed that the flocculent ANAMMOX sludge can be granulated after being operated for 384 days by the EGSB and UASB reactors. The average particle size reached 1.17 mm and 1.21 mm, respectively. The particle size ratio of each range (<0.2, 0.2-1.5, 1.5-3, and>3 mm) was 6.06%, 60.05%, 25.25%, and 8.64% in the EGSB reactor, and 7.40%, 58.90%, 32.04%, and 1.66% in the UASB reactor, respectively. The results of scanning electron microscopy showed that the bacterial flora during different operating conditions were mainly Brevibacterium and Cocci aggregates. High-throughput sequencing results showed that the Shannon index of the EGSB reactor was 7.52, higher than the 7.18 of the UASB reactor on day 384; Proteobacteria was the main phylum of the sludge at each stage, and Planctomycetes increased from 3.30% to 12.30% in the EGSB reactor and 13.30% in the UASB reactor on day 384. The main ANAMMOX genera in the EGSB reactor were Candidatus Brocadia, accounting for 7.53%, followed by Candidatus Kuenenia accounting for 1.61%, whereas in the UASB reactor, Candidatus Kuenenia was the dominant anaerobic ammonia genus, accounting for 7.54%, followed by Candidatus Brocadia, which accounted for 3.69%. The proportion of dominant species was related to the change in environmental factors. The proportion of Candidatus Brocadia was positively correlated with the up-flow rate and nitrogen removal rate (NRR), but negatively correlated with hydraulic retention time (HRT). Candidatus Kuenenia was positively correlated with nitrogen removal efficiency (NRE), NRR, and HRT, but negatively correlated with the up-flow rate.

Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching.

We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 °C up to 145 °C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.

Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory.

This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 µA. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 µA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOy layer. 1.5-nm-thick AlOy layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications.

Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application. The low effective dielectric constant value (k) layer of graphite or graphite oxide is utilized, which is beneficial in suppressing sneak-path currents in the crossbar RRAM array. The tail-bits with low nonlinearity can be manipulated by the positive voltage pulse, which in turn can alleviate variability and reliability issues. Our results provide additional insights for built-in nonlinearity in 1R-only selectorless RRAMs, which are applicable to the low-power memory array, ultrahigh density storage, and in-memory neuromorphic computational configurations.

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

A feasible approach is reported to reduce the switching current and increase the nonlinearity in a complementary metal-oxide-semiconductor (CMOS)-compatible Ti/SiNx /p+ -Si memristor by simply reducing the cell size down to sub-100 nm. Even though the switching voltages gradually increase with decreasing device size, the reset current is reduced because of the reduced current overshoot effect. The scaled devices (sub-100 nm) exhibit gradual reset switching driven by the electric field, whereas that of the large devices (≥1 µm) is driven by Joule heating. For the scaled cell (60 nm), the current levels are tunable by adjusting the reset stop voltage for multilevel cells. It is revealed that the nonlinearity in the low-resistance state is attributed to Fowler-Nordheim tunneling dominating in the high-voltage regime (≥1 V) for the scaled cells. The experimental findings demonstrate that the scaled metal-nitride-silicon memristor device paves the way to realize CMOS-compatible high-density crosspoint array applications.

Analog Synaptic Behavior of a Silicon Nitride Memristor.

In this paper, we present a synapse function using analog resistive-switching behaviors in a SiNx-based memristor with a complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture. A progressive conductance change is attainable as a result of the gradual growth and dissolution of the conducting path, and the series resistance of the AlOy layer in the Ni/SiNx/AlOy/TiN memristor device enhances analog switching performance by reducing current overshoot. A continuous and smooth gradual reset switching transition can be observed with a compliance current limit (>100 µA), and is highly suitable for demonstrating synaptic characteristics. Long-term potentiation and long-term depression are obtained by means of identical pulse responses. Moreover, symmetric and linear synaptic behaviors are significantly improved by optimizing pulse response conditions, which is verified by a neural network simulation. Finally, we display the spike-timing-dependent plasticity with the multipulse scheme. This work provides a possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric.

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p++-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities. The LRS was measured to be as low as 1 nA at a voltage of 1 V, because the SiNx layer maintains insulating properties for the LRS. The single-layered device suffers from uncontrollability of the conducting path, accompanied by the inherent randomness of switching parameters, weak immunity to breakdown during the reset process, and a high operating current. On the other hand, for a double-layered device, the effective conducting path in each layer, which can determine the operating current, can be well controlled by the ICC during the initial forming and set processes. A one-step forming and progressive reset process is observed for a low-power mode, which differs from the high-power switching mode that shows a two-step forming and reset process. Moreover, nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiNx layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiNx layer as an active dielectric.

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode.

This study proposes a method for a HfO2-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO2/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism is activated by a positive forming bias. In contrast, the selector property is induced by a negative forming bias. The material analyses firstly confirm the existence of V in the top electrode. Then the electrical measurements for the same V/HfO2/TiN structures but with different forming polarities were carried out to further investigate their DC sweeping characteristics to act as either a selector or RRAM device. Furthermore, reliability tests for both selector and RRAM devices were also conducted to confirm their switching stabilities. Finally, current fitting methods and temperature influence experiments were performed to investigate the carrier transport mechanisms. Finally, physical models were proposed to illustrate the selector property and RS mechanism for selector and RRAM devices, respectively. This simple device structure with its easy operating method accomplishes a significant advancement of devices combining both selector properties and RRAM for remarkable real applications in the near future.

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiO(x)) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiO(x)-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.