The Thermoelectric Properties of n-Type Bismuth Telluride: Bismuth Selenide Alloys Bi2Te3-x Se x.

Alloying bismuth telluride with antimony telluride and bismuth selenide for p- and n-type materials, respectively, improves the thermoelectric quality factor for use in room temperature modules. As the electronic and thermal transports can vary substantially, the alloy composition is a key engineering parameter. The n-type Bi2Te3- x Se x alloy lags its p-type counterpart in thermoelectric performance and does not lend itself as readily to simple transport modeling which complicates engineering. Combining literature data with recent results across the entire alloy composition range, the complex electronic structure dynamics and trends in lattice thermal conductivity are explored. Spin-orbit interaction plays a critical role in determining the position and degeneracy of the various conduction band minima. This behavior is incorporated into a two-band effective mass model to estimate the transport parameters in each band. An alloy scattering model is utilized to demonstrate how phonon scattering behaves differently on either side of the intermediate ordered compound Bi2Te2Se due to chalcogen site occupancy preference. The parametrization of the electronic and thermal transports presented can be used in future optimization efforts.

Chalcopyrite ZnSnSb2: A Promising Thermoelectric Material.

Ternary compounds with a tetragonal chalcopyrite structure, such as CuGaTe2, are promising thermoelectric (TE) materials. It has been demonstrated in various chalcopyrite systems, including compounds with quaternary chalcopyrite-like structures, that the lattice parameter ratio, c/ a, being exactly 2.00 to have a pseudo-cubic structure is key to increase the degeneracy at the valence band edge and ultimately achieve high TE performance. Considering the fact that ZnSnSb2 with a chalcopyrite structure is reported to have c/ a close to 2.00, it is expected to have multiple valence bands leading to a high p-type zT. However, there are no complete investigations on the high temperature TE properties of ZnSnSb2 mainly because of the difficulty of obtaining a single-phase ZnSnSb2. In the present study, pure ZnSnSb2 samples with no impurities are synthesized successfully using a Sn flux-based method and TE properties are characterized up to 585 K. Transport properties and thermal analysis indicate that the structure of ZnSnSb2 remains chalcopyrite with no order-disorder transition and clearly show that ZnSnSb2 can be made to exhibit a high zT in the low-to-mid temperature range through further optimization.

Multistates and Polyamorphism in Phase-Change K2Sb8Se13.

The phase-change (PC) materials in the majority of optical data storage media in use today exhibit a fast, reversible crystal → amorphous phase transition that allows them to be switched between on (1) and off (0) binary states. Solid-state inorganic materials with this property are relatively common, but those exhibiting an amorphous → amorphous transition called polyamorphism are exceptionally rare. K2Sb8Se13 (KSS) reported here is the first example of a material that has both amorphous → amorphous polyamorphic transition and amorphous → crystal transition at easily accessible temperatures (227 and 263 °C, respectively). The transitions are associated with the atomic coordinative preferences of the atoms, and all three states of K2Sb8Se13 are stable in air at 25 °C and 1 atm. All three states of K2Sb8Se13 exhibit distinct optical bandgaps, Eg = 1.25, 1.0, and 0.74 eV, for the amorphous-II, amorphous-I, and crystalline versions, respectively. The room-temperature electrical conductivity increases by more than 2 orders of magnitude from amorphous-I to -II and by another 2 orders of magnitude from amorphous-II to the crystalline state. This extraordinary behavior suggests that a new class of materials exist which could provide multistate level systems to enable higher-order computing logic circuits, reconfigurable logic devices, and optical switches.

Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C.

Bi2Te3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi2Te2.2Se0.8-silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self-tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the "in situ" CuI nanoprecipitates acting as phonon-scattering centers. Over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi2Te3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9-1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.

Nanocomposites from Solution-Synthesized PbTe-BiSbTe Nanoheterostructure with Unity Figure of Merit at Low-Medium Temperatures (500-600 K).

A scalable, low-temperature solution process is used to synthesize precursor material for Pb-doped Bi0.7 Sb1.3 Te3 thermoelectric nanocomposites. The controllable Pb-doping leads to the increase in the optical bandgap, thus delaying the onset of bipolar conduction. Furthermore, the solution synthesis enables nanostructuring, which greatly reduces thermal conductivity. As a result, this material exhibits a zT = 1 over the 513-613 K range.

Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4.

Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

n-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings.

Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S(2)σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S(2)σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S(2)σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.

Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4.

EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non-centrosymmetric structure in the tetragonal I4̄2m space group with unit cell parameters a=6.9016(5) Šand c=8.7153(9) Å. The compound features an indirect optical band gap E(g)=0.26(2) eV, and electronic-structure calculations show that the energy gap originates primarily from hybridization of the Ir 5d orbitals, with small contributions from the Ge 4p and In 5p orbitals. The strong spin-orbit coupling arising from the Ir atoms, and the lack of inversion symmetry leads to significant spin splitting, which is described by the Dresselhaus term, at both the conduction- and valence-band edges. The magnetic Eu(2+) ions present in the structure, which do not play a role in gap formation, order antiferromagnetically at 2.5 K.

Evaporative thinning: a facile synthesis method for high quality ultrathin layers of 2D crystals.

The palette of two-dimensional materials has expanded beyond graphene in recent years to include the chalcogenides among other systems. However, there is a considerable paucity of methods for controlled synthesis of mono- and/or few-layer two-dimensional materials with desirable quality, reproducibility, and generality. Here we show a facile top-down synthesis approach for ultrathin layers of 2D materials down to monolayer. Our method is based on controlled evaporative thinning of initially large sheets, as deposited by vapor mass-transport. Rather than optimizing conditions for monolayer deposition, our approach makes use of selective evaporation of thick sheets to control the eventual thickness, down to a monolayer, a process which appears to be self-stopping. As a result, 2D sheets with high yield, high reproducibility, and excellent quality can be generated with large (>10 µm) and thin (∼ 1-2 nm) dimensions. Evaporative thinning promises to greatly reduce the difficulty involved in isolating large, mono- and few-layers of 2D materials for subsequent studies.

Contrasting role of antimony and bismuth dopants on the thermoelectric performance of lead selenide.

Increasing the conversion efficiency of thermoelectric materials is a key scientific driver behind a worldwide effort to enable heat to electricity power generation at competitive cost. Here we report an increased performance for antimony-doped lead selenide with a thermoelectric figure of merit of ~1.5 at 800 K. This is in sharp contrast to bismuth doped lead selenide, which reaches a figure of merit of <1. Substituting antimony or bismuth for lead achieves maximum power factors between ~23-27 µW cm(-1) K(-2) at temperatures above 400 K. The addition of small amounts (~0.25 mol%) of antimony generates extensive nanoscale precipitates, whereas comparable amounts of bismuth results in very few or no precipitates. The antimony-rich precipitates are endotaxial in lead selenide, and appear remarkably effective in reducing the lattice thermal conductivity. The corresponding bismuth-containing samples exhibit smaller reduction in lattice thermal conductivity.

High ZT in p-type (PbTe)1-2x(PbSe)x(PbS)x thermoelectric materials.

Lead chalcogenide thermoelectric systems have been shown to reach record high figure of merit values via modification of the band structure to increase the power factor or via nanostructuring to reduce the thermal conductivity. Recently, (PbTe)1-x(PbSe)x was reported to reach high power factors via a delayed onset of interband crossing. Conversely, the (PbTe)1-x(PbS)x was reported to achieve low thermal conductivities arising from extensive nanostructuring. Here we report the thermoelectric properties of the pseudoternary 2% Na-doped (PbTe)1-2x(PbSe)x(PbS)x system. The (PbTe)1-2x(PbSe)x(PbS)x system is an excellent platform to study phase competition between entropically driven atomic mixing (solid solution behavior) and enthalpy-driven phase separation. We observe that the thermoelectric properties of the PbTe-PbSe-PbS 2% Na doped are superior to those of 2% Na-doped PbTe-PbSe and PbTe-PbS, respectively, achieving a ZT ≈2.0 at 800 K. The material exhibits an increased the power factor by virtue of valence band modification combined with a very reduced lattice thermal conductivity deriving from alloy scattering and point defects. The presence of sulfide ions in the rock-salt structure alters the band structure and creates a plateau in the electrical conductivity and thermopower from 600 to 800 K giving a power factor of 27 µW/cmK(2). The very low total thermal conductivity values of 1.1 W/m·K of the x = 0.07 composition is accounted for essentially by phonon scattering from solid solution defects rather than the assistance of endotaxial nanostructures.

NMR probe of metallic states in nanoscale topological insulators.

A 125Te NMR study of bismuth telluride nanoparticles as a function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from the single to the bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in the range 140-420 K, micrometer particles do so only below 200 K. The results reveal increased metallicity of these nanoscale topological insulators in the limit of higher surface-to-volume ratios.