Ferromagnetism emerged from non-ferromagnetic atomic crystals.

The recently emerged ferromagnetic two-dimensional (2D) materials provide unique platforms for compact spintronic devices down to the atomic-thin regime; however, the prospect is hindered by the limited number  of ferromagnetic 2D materials discovered with limited choices of magnetic properties. If 2D antiferromagnetism could be converted to 2D ferromagnetism, the range of 2D magnets and their potential applications would be significantly broadened. Here, we discovered emergent ferromagnetism by interfacing non-magnetic WS2 layers with the antiferromagnetic FePS3. The WS2 exhibits an order of magnitude enhanced Zeeman effect with a saturated interfacial exchange field ~38 Tesla. Given the pristine FePS3 is an intralayer antiferromagnet, the prominent interfacial exchange field suggests the formation of ferromagnetic FePS3 at interface. Furthermore, the enhanced Zeeman effect in WS2 is found to exhibit a strong WS2-thickness dependence, highlighting the layer-tailorable interfacial exchange coupling in WS2-FePS3 heterostructures, which is potentially attributed to the thickness-dependent interfacial hybridization.

Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band.

Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.

Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen.

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O2/Ar/H2 plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices.

Wide-Angle Tunable Critical Coupling in Nanophotonic Optical Coatings with Low-Loss Phase Change Material.

Realizing perfect light absorption in stacked thin films of dielectrics and metals through critical light coupling has recently received intensive research attention. In addition, realizing ultra-thin perfect absorber and tunable perfect absorber in the visible spectrum is essential for novel optoelectronics applications. However, the existing thin film stacks cannot show tunable perfect absorption in a wide-angle range. Here, a tunable perfect absorption from normal incidence to a wide-angle range (0° to 70°) by utilizing a two-layer stack consisting of a high refractive index low-loss dielectric on a high reflecting metal is proposed. This is experimentally demonstrated by depositing a thin layer of low-loss phase change material such as stibnite (Sb2 S3 ) on a thin layer of silver. This structure shows tunable perfect absorption with large spectral tunability in the visible wavelength. Furthermore, the absorption enhancement in 2D materials by transferring monolayer molybdenum disulfide on the stack, which shows 96% light absorption with enhanced photoluminescence, is demonstrated. In addition, the thin film stack can work as a scalable phase modulator offering a maximum phase tunability of ≈140° by changing the structural state of Sb2 S3 from amorphous to crystalline.

Metastable 1T'-phase group VIB transition metal dichalcogenide crystals.

Metastable 1T'-phase transition metal dichalcogenides (1T'-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T'-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T'-phase group VIB TMDs, including WS2, WSe2, MoS2, MoSe2, WS2xSe2(1-x) and MoS2xSe2(1-x). We solve the crystal structures of 1T'-WS2, -WSe2, -MoS2 and -MoSe2 with single-crystal X-ray diffraction. The as-prepared 1T'-WS2 exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T'-WS2. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.

High-Yield Exfoliation of Ultrathin 2D Ni3 Cr2 P2 S9 and Ni3 Cr2 P2 Se9 Nanosheets.

Multinary layered 2D nanomaterials can exhibit distinct physicochemical properties and innovative applications as compared to binary 2D nanomaterials due to their unique crystal structures. However, it still remains a challenge for the high-yield preparation of high-quality multinary 2D nanosheets. Here, the high-yield and large-scale production of two quaternary metal thiophosphate nanosheets are reported, i.e., Ni3 Cr2 P2 S9 and Ni3 Cr2 P2 Se9 , via the liquid exfoliation of their layered bulk crystals. The exfoliated single-crystalline Ni3 Cr2 P2 S9 nanosheets, with a lateral size ranging from a few hundred nanometers to a few micrometers and thickness of 1.4 ± 0.2 nm, can be easily used to prepare flexible thin films via a simple vacuum filtration process. As a proof-of-concept application, the fabricated thin film is used as a supercapacitor electrode with good specific capacitance. These high-yield, large-scale, solution-processable quaternary metal thiophosphate nanosheets could also be promising in other applications like biosensors, cancer therapies, and flexible electronics.

Room-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying.

Room-temperature manipulation and processing of information encoded in the electronic valley pseudospin and spin degrees of freedoms lie at the heart of the next technological quantum revolution. In atomically thin layers of transition-metal dichalcogenides (TMDs) with hexagonal lattices, valley-polarized excitations and valley quantum coherence can be generated by simply shining with adequately polarized light. In turn, the polarization states of light can induce topological Hall currents in the absence of an external magnetic field, which underlies the fundamental principle of opto-valleytronics devices. However, demonstration of optical generation of valley polarization at room temperature has remained challenging and not well understood. Here, we demonstrate control of strong valley polarization (valley quantum coherence) at room temperature of up to ∼50% (∼20%) by strategically designing Coulomb forces and spin-orbit interactions in atomically thin TMDs via chalcogenide alloying. We show that tailor making the carrier density and the relative order between optically active (bright) and forbidden (dark) states by key variations on the chalcogenide atom ratio allows full control of valley pseudospin dynamics. Our findings set a comprehensive approach for intrinsic and efficient manipulation of valley pseudospin and spin degree of freedom toward realistic opto-valleytronics devices.

Optogenetics inspired transition metal dichalcogenide neuristors for in-memory deep recurrent neural networks.

Shallow feed-forward networks are incapable of addressing complex tasks such as natural language processing that require learning of temporal signals. To address these requirements, we need deep neuromorphic architectures with recurrent connections such as deep recurrent neural networks. However, the training of such networks demand very high precision of weights, excellent conductance linearity and low write-noise- not satisfied by current memristive implementations. Inspired from optogenetics, here we report a neuromorphic computing platform comprised of photo-excitable neuristors capable of in-memory computations across 980 addressable states with a high signal-to-noise ratio of 77. The large linear dynamic range, low write noise and selective excitability allows high fidelity opto-electronic transfer of weights with a two-shot write scheme, while electrical in-memory inference provides energy efficiency. This method enables implementing a memristive deep recurrent neural network with twelve trainable layers with more than a million parameters to recognize spoken commands with >90% accuracy.

Ultrathin Ruddlesden-Popper Perovskite Heterojunction for Sensitive Photodetection.

Thanks to their unique optical and electric properties, 2D materials have attracted a lot of interest for optoelectronic applications. Here, the emerging 2D materials, organic-inorganic hybrid perovskites with van der Waals interlayer interaction (Ruddlesden-Popper perovskites), are synthesized and characterized. Photodetectors based on the few-layer Ruddlesden-Popper perovskite show good photoresponsivity as well as good detectivity. In order to further improve the photoresponse performance, 2D MoS2 is chosen to construct the perovskite-MoS2 heterojunction. The performance of the hybrid photodetector is largely improved with 6 and 2 orders of magnitude enhancement for photoresponsivity (104 A W-1 ) and detectivity (4 × 1010 Jones), respectively, which demonstrates the facile charge separation at the interface between perovskite and MoS2 . Furthermore, the contribution of back gate tuning is proved with a greatly reduced dark current. The results demonstrated here will open up a new field for the investigation of 2D perovskites for optoelectronic applications.

Trisulfide-Bond Acenes for Organic Batteries.

The molecular design of organic battery electrodes is a big challenge. Here, we synthesize two metal-free organosulfur acenes and shed insight into battery properties using first-principles calculations. A new zone-melting chemical-vapor-transport (ZM-CVT) apparatus was fabricated to provide a simple, solvent-free, and continuous synthetic protocol, and produce single crystals of tetrathiotetracene (TTT) and hexathiapentacene (HTP) at a large scale. Single crystals of HTP showed better Li-ion battery performance and higher cycling stability than those of TTT. A two-step, three-electron lithiation mechanism instead of the commonly depicted two-electron mechanism is proposed for the HTP Li-ion battery. The superior performance of HTP is linked to unique trisulfide bonding scenarios, which are also responsible for the formation of empty channels along the stacking direction. In-depth theoretical analysis suggests that organosulfur acenes are potential prototypes for organic battery materials with tunable properties, and that the tuning of sulfur bonds is critical in designing these new materials.

Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric.

Recent research on piezoelectric materials is predominantly devoted to enhancing the piezoelectric coefficient, but overlooks its sign, largely because almost all of them exhibit positive longitudinal piezoelectricity. The only experimentally known exception is ferroelectric polymer poly(vinylidene fluoride) and its copolymers, which condense via weak van der Waals (vdW) interaction and show negative piezoelectricity. Here we report quantitative determination of giant intrinsic negative longitudinal piezoelectricity and electrostriction in another class of vdW solids-two-dimensional (2D) layered ferroelectric CuInP2S6. With the help of single crystal x-ray crystallography and density-functional theory calculations, we unravel the atomistic origin of negative piezoelectricity in this system, which arises from the large displacive instability of Cu ions coupled with its reduced lattice dimensionality. Furthermore, the sizable piezoelectric response and negligible substrate clamping effect of the 2D vdW piezoelectric materials warrant their great potential in nanoscale, flexible electromechanical devices.

Ultrasensitive 2D Bi2 O2 Se Phototransistors on Silicon Substrates.

2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2 O2 Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2 O2 Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W-1 , a photoconductive gain of more than 104 , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.

Light-Tunable 1T-TaS2 Charge-Density-Wave Oscillators.

External stimuli-controlled phase transitions are essential for fundamental physics and design of functional devices. Charge density wave (CDW) is a metastable collective electronic phase featured by the periodic lattice distortion. Much attention has been attracted to study the external control of CDW phases. Although much work has been done in the electric-field-induced CDW transition, the study of the role of Joule heating in the phase transition is insufficient. Here, using the Raman spectroscopy, the electric-field-driven phase transition is in situ observed in the ultrathin 1T-TaS2. By quantitative evaluation of the Joule heating effect in the electric-field-induced CDW transition, it is shown that Joule heating plays a secondary role in the nearly commensurate (NC) to incommensurate (IC) CDW transition, while it dominants the IC-NC CDW transition, providing a better understanding of the electric field-induced phase transition. More importantly, at room temperature, light illumination can modulate the CDW phase and thus tune the frequency of the ultrathin 1T-TaS2 oscillators. This light tunability of the CDW phase transition is promising for multifunctional device applications.

Preparation of 1T'-Phase ReS2 xSe2(1- x) ( x = 0-1) Nanodots for Highly Efficient Electrocatalytic Hydrogen Evolution Reaction.

As a source of clean energy, a reliable hydrogen evolution reaction (HER) requires robust and highly efficient catalysts. Here, by combining chemical vapor transport and Li-intercalation, we have prepared a series of 1T'-phase ReS2 xSe2(1- x) ( x = 0-1) nanodots to achieve high-performance HER in acid medium. Among them, the 1T'-phase ReSSe nanodot exhibits the highest hydrogen evolution activity, with a Tafel slope of 50.1 mV dec-1 and a low overpotential of 84 mV at current density of 10 mA cm-2. The excellent hydrogen evolution activity is attributed to the optimal hydrogen absorption energy of the active site induced by the asymmetric S vacancy in the highly asymmetric 1T' crystal structure.

Few-layer NiPS3 nanosheets as bifunctional materials for Li-ion storage and oxygen evolution reaction.

The construction of two-dimensional (2D) ultrathin nanosheets is considered as a promising strategy for enhancing electrochemical performance, owing to their large surface area and fast electron transport. In this study, ultrathin few-layer NiPS3 nanosheets are obtained and systematically investigated by high-yield liquid phase exfoliation from their bulk layered crystals, and are exploited as anodes for lithium ion batteries (LIBs) and electrocatalysts for oxygen evolution reaction (OER). When evaluated as an anode for LIBs, NiPS3 nanosheets show excellent electrochemical properties in terms of stable cycling performance and rate capabilities. A stable reversible capacity of 796.2 mA h g-1 is delivered after the 150th cycle at a current density of 100 mA g-1. As for the OER, the exfoliated few-layer NiPS3 nanosheets have demonstrated excellent electrocatalytic performance, such as a low overpotential of 301 mV at a current density of 10 mA cm-2, a small Tafel slope of 43 mV dec-1, and an outstanding long-term durability. This work is expected to make a contribution to develop next generation high-performance electrochemically active materials for catalysts and batteries.

From Linear to Angular Isomers: Achieving Tunable Charge Transport in Single-Crystal Indolocarbazoles Through Delicate Synergetic CH/NH⋠⋠⋠π Interactions.

Weak intermolecular interaction in organic semiconducting molecular crystals plays an important role in molecular packing and electronic properties. Here, four five-ring-fused isomers were rationally designed and synthesized to investigate the isomeric influence of linear and angular shapes in affecting their molecular packing and resultant electronic properties. Single-crystal field-effect transistors showed mobility order of 5,7-ICZ (3.61 cm2 V-1 s-1 ) >5,11-ICZ (0.55 cm2 V-1 s-1 ) >11,12-ICZ (ca. 10-5  cm2 V-1 s-1 ) and 5,12-ICZ (ca. 10-6  cm2 V-1 s-1 ). Theoretical calculations based on density functional theory (DFT) and polaron transport model revealed that 5,7-ICZ can reach higher mobilities than the others thanks to relatively higher hole transfer integral that links to stronger intermolecular interaction due to the presence of multiple NH⋅⋅⋅π and CH⋅⋅⋅π(py) interactions with energy close to common NH⋅⋅⋅N hydrogen bonds, as well as overall lower hole-vibrational coupling owing to the absence of coupling of holes to low frequency modes due to better π conjugation.

Preparation of High-Percentage 1T-Phase Transition Metal Dichalcogenide Nanodots for Electrochemical Hydrogen Evolution.

Nanostructured transition metal dichalcogenides (TMDs) are proven to be efficient and robust earth-abundant electrocatalysts to potentially replace precious platinum-based catalysts for the hydrogen evolution reaction (HER). However, the catalytic efficiency of reported TMD catalysts is still limited by their low-density active sites, low conductivity, and/or uncleaned surface. Herein, a general and facile method is reported for high-yield, large-scale production of water-dispersed, ultrasmall-sized, high-percentage 1T-phase, single-layer TMD nanodots with high-density active edge sites and clean surface, including MoS2 , WS2 , MoSe2 , Mo0.5 W0.5 S2 , and MoSSe, which exhibit much enhanced electrochemical HER performances as compared to their corresponding nanosheets. Impressively, the obtained MoSSe nanodots achieve a low overpotential of -140 mV at current density of 10 mA cm-2 , a Tafel slope of 40 mV dec-1 , and excellent long-term durability. The experimental and theoretical results suggest that the excellent catalytic activity of MoSSe nanodots is attributed to the high-density active edge sites, high-percentage metallic 1T phase, alloying effect and basal-plane Se-vacancy. This work provides a universal and effective way toward the synthesis of TMD nanostructures with abundant active sites for electrocatalysis, which can also be used for other applications such as batteries, sensors, and bioimaging.

Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling.

Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm(2) V(-1) s(-1) and an on/off ratio of 10(5), together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W(-1). The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

The high-yield and scalable production of single-layer ternary transition metal dichalcogenide nanosheets with ≈66% of metallic 1T phase, including MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 is achieved via electrochemical Li-intercalation and the exfoliation method. Thin film MoS(2x)Se2(1- x) nanosheets drop-cast on a fluorine-doped tin oxide substrate are used as an efficient electrocatalyst on the counter electrode for the tri-iodide reduction in a dye-sensitized solar cell.

Plasma-enhanced microwave solid-state synthesis of cadmium sulfide: reaction mechanism and optical properties.

CdS synthesis by plasma-enhanced microwave physical vapor transport (PMPVT) has been developed in this work. The photoluminescence (PL), absorbance, Raman spectra and the mechanism of CdS crystal growth have been investigated. Furthermore, plasma-enhanced microwave chemical vapour transport (PMCVT) synthesis of CdS with additional chemical transport agents has been explored. In addition, other II-VI chalcogenides were also synthesized by PMPVT.