RESUMEN
This paper proposes a fast transient load response capacitor-less low-dropout regulator (CL-LDO) for digital analog hybrid circuits in the 180 nm process, capable of converting input voltages from 1.2 V to 1.8 V into an output voltage of 1 V. The design incorporates a rail-to-rail input and push-pull output (RIPO) amplifier to enhance the gain while satisfying the requirement for low power consumption. A super source follower buffer (SSFB) with internal stability is introduced to ensure loop stability. The proposed structure ensures the steady-state performance of the LDO without an on-chip capacitor. The auxiliary circuit, or transient enhancement circuit, does not compromise the steady-state stability and effectively enhances the transient performance during sudden load current steps. The proposed LDO consumes a quiescent current of 47 µA and achieves 25 µV/mA load regulation with a load current ranging from 0 to 20 mA. The simulation results demonstrate that a settling time of 0.2 µs is achieved for load steps ranging from 0 mA to 20 mA, while a settling time of 0.5 µs is attained for load steps ranging from 20 mA to 0 mA, with an edge time of 0.1 µs.
RESUMEN
This paper proposed a fully integrated adaptive on-time (AOT) controlled buck converter with fast load transient. An adaptive on-time generator is presented to stabilize the output frequency. To enhance the light load efficiency, the converter could transfer from the pulse width modulation (PWM) to pulse skip modulation (PSM) as the load current decreases. The buck converter can switch between these two modulation modes adaptively with the assistance of a zero current detection circuit. Implemented in the TSMC 0.18 µm BCD (BiCMOS/DMOS) process, the proposed buck converter works with an input voltage ranging from 5.5 to 15 V, an output voltage ranging from 0.5 to 5 V, and an output load ranging up to 5 A. The experimental results show that based on the dual modulation adaptive on-time controlled mode, the transient recovery time from light to heavy load and from heavy load to light load is 13 µs and 15 µs, respectively. An overshot voltage of 57 mV and an undershot voltage of 53 mV are also achieved.
RESUMEN
Memristors are an important component of the next-generation artificial neural network, high computing systems, etc. In the past, two-dimensional materials based memristors have achieved a high performance and low power consumption, though one at the cost of the other. Furthermore, their performance can not be modulated frequently once their structures are fixed, which remains the bottleneck in the development. Herein, a series of forming free memristors are fabricated with the same Cu/Fe3GeTe2oxide/Fe3GeTe2/Al structure, yet the On/Off ratio and set voltage is modulated continuously by varying the oxidation time during fabrication. With an optimal oxidation time, a large On/Off ratio (1.58 × 103) and low set voltage (0.74 V) is achieved in a single device. The formation and rapture of Al conductive filaments are found to be responsible for the memristors, and the filaments density and the cross-section area increase with the increase of current compliance, which achieves a higher On/Off ratio. The memristor can imitate basic biological synaptic functions using voltage pulses, demonstrating the potential for low-power consuming neuromorphic computing applications.
