Tuning Perovskite Surface Polarity via Dipole Moment Engineering for Efficient Hole-Transport-Layer-Free Sn-Pb Mixed-Perovskite Solar Cells.

Post-treatment has been recognized as one of the effective methods for passivating the underlying defects in perovskite solar cells (PSCs), but little attention has been paid to how to pick suitable passivation agents with diverse isomers for efficient PSCs, particularly for the tin-lead (Sn-Pb) mixed PSCs. Here, we introduce the dependence of the power conversion efficiency (PCE) on a dipole moment for surface passivator screening, in which we chose three trifluoromethyl-phenylethylamine hydroiodide (CF3-PEAI) isomers as surface-treatment materials for hole-transport-layer-free (HTL-free) Sn-Pb mixed PSCs. The different positions of the -CF3 group for the CF3-PEAI isomer result in different dipole moments, which influences the interaction between CF3-PEAI and lead iodide. The para position CF3 with the highest dipole moment exhibits a higher PCE than the ortho-position with a lower dipole moment, which is attributed to the large dipole moment on the surface that could tune the surface polarity from p-type to n-type, facilitating electron charge transport in the HTL-free Sn-Pb mixed PSCs. An ultrathin 2D layer is formed on the perovskite surface to passivate the surface defects, which is responsible for the enhancement of the PCE and stability of the PSCs. As a result, the open-circuit voltage (VOC) of the device is improved from 0.775 to 0.824 V, yielding a champion PCE of 20.17%, which is one of the highest PCEs among the reported HTL-free Sn-Pb mixed PSCs. The device also shows improved stability with remaining 75% of its initial PCEs after storage in N2 for 700 h.

Dual Optimization of Bulk and Interface via the Synergistic Effect of Ligand Anchoring and Hole Transport Dopant Enables 23.28% Efficiency Inverted Perovskite Solar Cells.

The crystalline morphology of perovskite film plays a key role in determining the stability and performance of perovskite solar cells (PSCs). In addition, the work function and conductivity of hole transport layer (HTL) have a great influence on the effciency of PSCs. Here, we develop a synergistic doping strategy to fabricate high-performance inverted PSCs, doping a functional nanographene (C78-AHM) into the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) HTL, thus forming an HTL with higher conductivity, lower roughness, and frontier energy levels matching the perovskite absorber work function. On this basis, thiosemicarbazide (TSC) was doped into the precursor solution of perovskite as the grain and interface modifier to further improve the crystalline morphology of perovskite film. Compared with the current single passivation method, this codoping strategy can simultaneously reduce the surface and bulk defects of perovskite film and reduce the interface energy barrier. Eventually, high-quality TSC-doped perovskite films based on C78-AHM-doped PTAA HTL are obtained with over 2 µm sized grains, pinhole-free, and improved crystallinity. As a result, this synergistic doping strategy increases the efficiency of the device from 20.27% to 23.28%. Furthermore, the environmental and thermal stabilities of the devices are significantly improved. Therefore, this work provides a simple way for the preparation of other efficient optoelectronic devices.

Dually Modified Wide-Bandgap Perovskites by Phenylethylammonium Acetate toward Highly Efficient Solar Cells with Low Photovoltage Loss.

Wide-bandgap perovskites as a class of promising top-cell materials have shown great promise in constructing efficient perovskite-based tandem solar cells, but their intrinsic relatively low radiative efficiency results in a large open-circuit voltage (VOC) deficit and thereby limits the whole device performance. Reducing film flaws or optimizing interfacial energy level alignments in wide-bandgap perovskite devices can efficiently inhibit nonradiative recombination to boost device VOC and efficiency. However, the simultaneous regulation on both sides and their underlying mechanism are less explored. Herein, a bifunctional modification approach is proposed to optimize the wide-bandgap perovskite surface with an ultrathin layer of phenylethylammonium acetate (PEAAc) to synchronously decrease the surface imperfection and mitigate the interfacial energy barrier. This treatment effectively heals under-coordinated surface defects through the formation of chemical interaction between the perovskite and PEAAc, bringing about a much slower charge trapping process and dramatically decreasing nonradiative recombination losses. Meanwhile, the passivation-induced upshifted Fermi level of the perovskite contributes to accelerated electron extraction and larger Fermi-level splitting under illumination. Consequently, the PEAAc-modified wide-bandgap (1.68 eV) device achieves an optimal efficiency of 20.66% with a high VOC of 1.25 V, among the highest reported VOC values for wide-bandgap perovskite devices, enormously outperforming that (18.86% and 1.18 V) of the device without passivation. In addition, the radiative limit of VOC for both cells is determined to be 1.42 V, delivering nonradiative recombination losses of 0.24 and 0.17 V for the control and PEAAc-modified devices, respectively. These results highlight the significance of the bifunctional modification strategy in achieving high-performance wide-bandgap perovskite devices.