Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a ß-Ga2O3 substrate.

We demonstrate the InGaN/GaN-based monolithic micro-pyramid white (MPW) vertical LED (VLED) grown on (-201)-oriented ß-Ga2O3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10-11) sidewalls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on ß-Ga2O3 has great potential for highly efficient phosphor-free white light emission.

Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode.

Epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer-scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h-BN composite buffer layer and its application in flexible InGaN-based light-emitting diodes (LEDs) is demonstrated. Guided by first-principles calculations, the nucleation and bonding mechanism of GaN and AlN on h-BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2 -plasma-treated h-BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high-temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain-relaxation model for III-nitrides on h-BN is proposed. Eventually, the mechanical exfoliation of single-crystalline GaN film and LED through weak interaction between multilayer h-BN is realized. The flexible free-standing thin-film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

Plasmon-enhanced deep ultraviolet Micro-LED arrays for solar-blind communications.

Localized surface plasmon resonance (LSPR)-enhanced deep ultraviolet (DUV) Micro-light emitting diodes (Micro-LEDs) using Al nanotriangle arrays (NTAs) are reported for improving the -3 dB modulation bandwidth. Through self-assembled nanospheres, the high-density Al NTAs arrays are transferred into the designated p-AlGaN region of the Micro-LEDs, realizing the effect of LSPR coupling. A 2.5-fold enhancement in photoluminescence (PL) intensity is demonstrated. Combined with the PL intensity ratio at 300 K and 10 K, internal quantum efficiency (IQE) may be increased about 15-20% by the plasmonic effect and the carrier lifetime decreases from 1.15 ns to 0.82 ns, suggesting that LSPR accelerates the spontaneous emission rate. Resulting from the improvement of the IQE, the electroluminescence intensity of Micro-LED arrays with LSPR is obviously increased. Meanwhile, the -3 dB bandwidth of 6 × 6 Micro-LED arrays is increased from 180 MHz to 300 MHz at a current density of 200 A/cm2. A potential way is proposed to further increase both the IQE and the modulation bandwidth of DUV Micro-LEDs.

GaN-based parallel micro-light-emitting diode arrays with dual-wavelength InxGa1-xN/GaN MQWs for visible light communication.

The dual-wavelength InxGa1-xN/GaN micro light emitting diode (Micro-LED) arrays are fabricated by flip-chip parallel connection. It is noted that the Micro-LED arrays with smaller diameter present considerably bigger light output power density (LOPD). For all Micro-LEDs, the LOPD increases continuously with increasing injection current density until it "turns over". It also can be observed that the maximum value of LOPD is determined by the blue quantum well (QW) for the broad area LED. In comparison, the green peak intensity dominates the change of LOPD in the Micro-LEDs. In addition, the enhancement of the green peak intensity value for the Micro-LEDs are considered as a consequence of the combined effects of the reduction in the quantum-confined Stark effect (QCSE) and the crowding effect, high LEE as well as geometric shape. Moreover, -3dB modulation bandwidths of the four different kinds of Micro-LEDs increase with the decrease of the device diameter in the same injected current density, higher than that of the broad area LED. The -3dB modulation bandwidth of the 60 µm Micro-LED shows 1.4 times enhancement compared to that of the broad area LED under the current density of 300 mA/cm2. Evidently, the dual-wavelength InxGa1-xN/GaN Micro-LEDs have great potential in both solid-state lighting (SSL) and the visible light communication (VLC) in the future fabrication.

Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on ß-Ga2O3.

In this Letter, we describe the fabrication of three dimensional (3D) truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on ß-Ga2O3 substrate. In the 3D n-GaN layer, it is noted that the longitudinal growth rate of the 3D n-GaN layer increases as the flow rate of N2 decreases and H2 increases. Moreover, the 3D THP VLED can effectively suppress the quantum-confined Stark effect (QCSE) compared with planar VLEDs due to the semipolar facets and strain relaxation. Thus, the internal quantum efficiency (IQE) of the 3D THP VLED has been doubled and the V-shaped pits have been greatly reduced. In particular, the 3D THP VLED enables multi-wavelength emission (448.0 nm and 498.5 nm) and also shows better light extraction efficiency (LEE), which presents an effective way for the realization of phosphor-free white LED devices.

Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect.

We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive strain than a flat structure when a convex bending strain is applied. Moreover, the photoluminescence (PL) intensity exhibits a tendency to increase first and then decrease under the enhanced compressive strain. Specifically, light intensity reaches a maximum of about 123% accompanied by 1.1-nm blueshift, and the carrier lifetime comes to the minimum simultaneously. The enhanced luminescence characteristics are attributed to strain-induced interface polarized charges, which modulate the built-in field in InGaN/GaN MQWs and could promote the radiative recombination of carriers. This work opens a pathway to drastically improve InGaN-based long-wavelength micro-LEDs with highly efficient piezo-phototronic modulation.

Exploration of fluorescence-based real-time loop-mediated isothermal amplification (LAMP) assay for detection of Isospora suis oocysts.

Isospora suis is an intestinal protozoan parasite in pigs. The 2-3 weeks old piglets are most often infected by I. suis because their immune system is not fully developed. The infection exhibits clinical features such as diarrhea and dehydration and seriously affects the economic interests of farmers. The traditional method of identifying I. suis relies on the detection of fecal oocysts, which depends heavily on the accumulation of experience. Thus, missed detection, and false alarms often occur during detection. With the development of molecular-based detection methods, development of a simple, convenient and more sensitive method for the detection of I. suis is an urgent need. In this study, based on the 18S rRNA gene sequence, a fluorescence -based real-time loop-mediated isothermal amplification (LAMP) assay was established for the detection of I. suis. The results showed that the assay is highly specific and sensitive, with a detection limit of 2.74 × 10(2) copies/µL recombinant plasmid of I. suis, corresponding to 1 fg/µL plasmid when converted to DNA concentration. The sensitivity is about 100 times higher than conventional PCR. Additionally, DNA extracted from a certain number of oocysts was used for detection, and it showed that the LAMP assay had a detection limit of 5 oocysts, lower than that of 13 oocysts of conventional PCR. The established LAMP assay overcomes the shortage of the traditional microscopy-based method, and provides a valuable way for molecular detection of I. suis.

Genetic Characterization of Toxoplasma gondii from Zoo Wildlife and Pet Birds in Fujian, China.

BACKGROUND: Toxoplasmosis, a worldwide zoonotic disease, is caused by Toxoplasma gondii. The distribution of genetic diversity of T. gondii in wild animals is of great importance to understand the transmission of the parasite in the environment. However, little is known about T. gondii prevalence in wild animals and birds in China. METHODS: We conducted the genetic characterization of T. gondii isolated from Zoo Wild Animals and Pet Birds in Fujian Province, Southeastern China. Heart tissues were collected from 45 zoo animals and 140 pet birds. After identified using B1 gene, the genetic diversity of T. gondii isolates were typed at 11 genetic markers, including SAG1, 5' and 3'-SAG2, alternative SAG2, SAG3, BTUB, GRA6, c22-8, c29-2, L358, PK1, Apico, and CS3. RESULTS: Seven of 45 zoo animals and 3 of 140 pet birds were positive by PCR amplification using T. gondii B1 gene specific primers. Of these positive isolates, 3 isolates from Black-capped (Cebus apella), Peacock (Peafowl) and Budgerigar (Melopsittacus undulatus) were successfully genotyped at 11 genetic loci, and grouped to three distinct genotypes: ToxoDB Genotype #9, #2 and #10, respectively. CONCLUSION: This is the first genotyping of T. gondii isolated from zoo wild animals and pet birds in Fujian, China. There is a potential risk for the transmission of this parasite through zoo wild animals and pet birds in this region.