Effects of Mn doping on electronic and quantum transport in PbPdO2 thin films.

PbPdO2, a gapless semiconductor, can be transformed into a spin gapless semiconductor structure by magnetic ion doping. This unique band-gap structure serves as the foundation for its distinctive physical properties. In this study, PbPd1-xMnxO2 (x = 0.05, 0.1, 0.15) thin films with (002) preferred orientation were prepared by laser pulse deposition (PLD). The structural, electroresistive and magnetoresistive properties were systematically characterized, and the results suggest that films with different Mn doping ratios exhibit a current-induced positive colossal electroresistance (CER), and the CER values of PbPd1-xMnxO2 thin films increase with the increase of Mn doping concentration. The CER values are several fold magnitudes higher compared to those of the previously reported PbPdO2 films possessing identical (002) orientation. Combined with first-principles calculation, the underlying influence mechanism of Mn doping on CER is elucidated. In situ X-ray photoelectron spectroscopy (XPS) demonstrates a close correlation between the positive CER and the band gap change induced by oxygen vacancies in PbPd1-xMnxO2. Additionally, it is observed that Mn-doped films exhibit weak localization (WL) and weak anti-localization (WAL) quantum transport. Moreover, it is found that Mn doping can lead to a transition from WAL to WL; a small amount of Mn doping significantly enhances the weak anti-localization effect. However, with increasing Mn concentration, the WAL effect is conversely weakened. The results of studies suggest strongly that PbPdO2, one of the few oxide topological insulators, can display novel quantum transport behavior by ion doping.

Magnetic field modulation effect of photoelectric properties in dye-sensitized solar cells with La0.67(Ca,Ba)0.33MnO3 as counter electrodes.

BACKGROUND: In recent years, many semiconductor materials with unique band structures have been used as Pt counter electrode (CE) substitutes for dye-sensitized solar cells (DSSCs), which makes the photoelectric properties of DSSCs possible to be modulated by electric field, magnetic field, and light field. In this work, La0.67(Ca Ba)0.33MnO3 (LCBMO) thin film is employed to act as CE in DSSCs. METHOD: The experimental results indicate that short-circuit current density and photoelectric conversion efficiency present better stability when applying an external magnetic field to the DSSCs. Furthermore, both the exchange current density (J0) and limit diffusion current density (Jlim) are largely enhanced by an external magnetic field. J0 increases from -0.51 mA•cm-2 to -0.65 mA•cm-2, and Jlim increases from 0.2 mA•cm-2 to 0.3 mA•cm-2 when applying a magnetic field of 0.25 T. RESULT: The fitting results of the impedance test verify that the magnetic field reduces the value of Rct. CONCLUSION: Both magnetic-field enhancing catalytic activity and CMR effect jointly promote the increase of photocurrent and finally improve the photovoltaic effect in DSSCs.

Zn(O,S) Buffer Layer for in Situ Hydrothermal Sb2S3 Planar Solar Cells.

Hydrothermal deposition is emerging as a highly potential route for antimony-based solar cells, in which the Sb2(S,Se)3 is typically in situ grown on a common toxic CdS buffer layer. The narrow band gap of CdS causes a considerable absorption in the short-wavelength region and then lowers the current density of the device. Herein, TiO2 is first evaluated as an alternative Cd-free buffer layer for hydrothermally derived Sb2S3 solar cells. But it suffers from a severely inhomogeneous Sb2S3 coverage, which is effectively eliminated by inserting a Zn(O,S) layer. The surface atom of sulfur in Zn(O,S) uniquely provides a chemical bridge to enable the quasi-epitaxial deposition of Sb2S3 thin film, confirming by both morphology and binding energy analysis using DFT. Then the results of the first-principles calculations also show that Zn(O,S)/Sb2S3 has a more stable structure than TiO2/Sb2S3. The resultant perfect Zn(O,S)/Sb2S3 junction, with a suitable band alignment and excellent interface contact, delivers a remarkably enhanced JSC and VOC for Sb2S3 solar cells. The device efficiency with the TiO2/Zn(O,S) buffer layer boosts from 0.54% to 3.70% compared with the counterpart of TiO2, which has a champion efficiency of Cd-free Sb2S3 solar cells with a structure of ITO/TiO2/Zn(O,S)/Sb2S3/Carbon/Ag by in situ hydrothermal deposition. This work provides a guideline for the hydrothermal deposition of antimony-based films upon a nontoxic buffer layer.

Highly oriented GeSe thin film: self-assembly growth via the sandwiching post-annealing treatment and its solar cell performance.

GeSe is considered as a potential absorber material for thin film solar cells owing to its ideal band gap, strong light absorption, remarkable air durability, Earth-abundance and non-toxic constituents. However, the high vapor pressure of GeSe at a temperature below its melting point makes it difficult to synthesize a high-quality GeSe film. To alleviate this limitation, in this work, a thermal evaporation combining a novel sandwiching post-annealing method was introduced to deposit high quality GeSe thin films with (100)-orientation. The self-assembling mechanism of the highly oriented GeSe film was carefully investigated by the systematic experiments and confirmed by the lowest total energy of the (100) crystal plane. Finally, the fully-inorganic, low-cost and non-toxic planar device with the superstrate configuration of FTO/TiO2/GeSe/carbon/Ag was also successfully fabricated. Notably, as a result, an impressive open circuit voltage (VOC) of 340 mV (maximum: 456 mV) was achieved, which is the highest VOC of GeSe solar cells reported so far. Furthermore, through current-voltage, capacitance-voltage profiling and drive level capacitance profiling measurements, it was demonstrated that the limiting factors of the GeSe solar cell performance were the narrow depletion width (138 nm) and the drastic recombination at the TiO2/GeSe interface.

The influences of V and Gd dopants on the structures and electrical and magnetic properties of PbPdO2 thin films.

PbPdO2, PbPd0.9V0.1O2 and PbPd0.9Gd0.1O2 thin films with body-centered orthorhombic structure were prepared by PLD technique, respectively. Their structures, magnetic and electrical properties were measured by XRD, SEM, AFM, EDS, XPS and VSM, respectively. The experimental results indicate that the three samples all have the preferred orientation of (002), and room temperature ferromagnetism. From EDS and XPS results, we can deduce that there exist Pb vacancies in the three samples. Meanwhile, the valence states for Pb, Pd, O, Gd and V ions were found to be 2+, 2+, 2-, 3+ and mixed 4+ and 5+, respectively. It was also found that the magnetic moments of PbPdO2 and PbPd0.9Gd0.1O2 are least and largest, respectively. Moreover, the electrical characteristics analysis indicates that the electrical resistivity is enhanced by V ion substitution, but reduced by Gd ion substitution. In addition, the significant insulator-metal transition temperatures of PbPdO2, PbPd0.9V0.1O2 and PbPd0.9Gd0.1O2 were found to be about 385 K, 390 K and 430 K, respectively. Finally, according to the experimental facts of Pb vacancies in the three samples, the first-principles calculated models containing Pb vacancies were established. The calculated results explain well the magnetic origin of PbPdO2, and V and Gd doping roles on its electrical and magnetic properties.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Study of magnetic dynamic properties for magnetic cluster and quantum dots with hexagonal array.

Based on the Monte-Carlo simulation, magnetic dynamic properties of magnetic clusters and quasi two-dimensional quantum dots with hexagonal lattice arrays have been calculated. It has been found that the saturation fields for the cluster and quantum dot increase with increasing dipolar interaction. However, hysteresis loops of the quantum dots are different from those in clusters. Hysteresis behavior of quantum dot array is associated closely with the radius of quantum dot and the distance between quantum dots. The calculated results are consistent with experimental results. Finally, the step effect of hysteresis loops has been explained by the competition roles among the configurational anisotropy energy, Zeeman energy and thermal energy.